Patent US5747880A successfully refreshed from Google Patents.
US5747880A
Expired / Lapsed
US
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Interconnect structure with an integrated low density dielectric
Assignee: Texas Instruments Inc
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Filing: 1996-11-18
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Granted: 1998-05-05
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Expires: 2016-11-18
Abstract
Abstract This invention provides a semiconductor device and process for making the same with dramatically reduced capacitance between adjacent conductors and an interlayer dielectric construction which emphasizes mechanical strength, etch compatibility, and good heat transfer. This process can include applying a solution between conductors 24, and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric and provide mechanical strength, heat transfer, and a solid layer for via etch. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
Inventors
- 👤 Robert H. Havemann
- 👤 Shin-puu Jeng
- 👤 Bruce E. Gnade
- 👤 Chih-Chen Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6548; H10P14/6546; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/6903; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/074; H10W20/077; H10W20/40; H10W20/41; H10W20/42; H10W20/435; H10W20/45; H10W20/46; H10W20/48; H10W20/495; H10P14/63; H10P14/6326; H10P14/6342; H10P14/665; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/118
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
133 words
A semiconductor device which comprises: (a) first and second horizontally adjacent conductors formed on a substrate; (b) a porous dielectric between said first and second conductors, said porous dielectric having an average height of 75% to 150% the height of said conductors, said porous dielectric having a porosity in the range of 30% to 95% and an average pore diameter of less than 80 nm; and (c) a non-porous dielectric layer deposited over said first and second conductors and said porous dielectric, said non-porous layer having a height at least 50% the height of said conductors as measured over said conductors, whereby the capacitive coupling between conductors on the same level is substantially reduced compared to a solid silicon dioxide dielectric and the mechanical properties of a solid interlayer dielectric are substantially preserved.
Claim 2
Dependent Claim
133 words
A semiconductor device which comprises: (a) first and second horizontally adjacent conductors formed on a substrate; (b) a porous dielectric between said first and second conductors, said porous dielectric having an average height of 75% to 150% the height of said conductors, said porous dielectric having a porosity in the range of 30% to 95% and an average pore diameter of less than 80 nm; and (c) a non-porous dielectric layer deposited over said first and second conductors and said porous dielectric, said non-porous layer having a height at least 50% the height of said conductors as measured over said conductors, whereby the capacitive coupling between conductors on the same level is substantially reduced compared to a solid silicon dioxide dielectric and the mechanical properties of a solid interlayer dielectric are substantially preserved.
Claim 3
Dependent Claim
18 words
The semiconductor device of claim 1, wherein said non-porous dielectric layer comprises substantially all of an interlayer dielectric.
Claim 4
Dependent Claim
20 words
The semiconductor device of claim 1, wherein said porous dielectric has a porosity in the range of 50% to 75%.
Claim 5
Dependent Claim
23 words
The semiconductor device of claim 1, wherein said porous dielectric has pore diameters in the approximate range of 2 nm to 25 nm.
Claim 6
Dependent Claim
12 words
The semiconductor device of claim 1, wherein said porous dielectric is hydrophobic.
Claim 7
Dependent Claim
20 words
The semiconductor device of claim 1, further comprising a passivating layer covering the sides of said first and second conductors.
Claim 8
Dependent Claim
29 words
The semiconductor device of claim 6, wherein said passivating layer is comprised of materials selected from the group consisting of: silicon nitride, silicon dioxide, silicon oxynitride, and combinations thereof.
Claim 9
Dependent Claim
35 words
The semiconductor device of claim 1, wherein said conductors are comprised of materials selected from the group consisting of: aluminum, copper, titanium, platinum, gold, tungsten, polysilicon, tantalum, nickel, TiN, TiSi 2 , and combinations thereof.
Claim 10
Dependent Claim
32 words
The semiconductor device of claim 1, wherein said non-porous dielectric layer is comprised of materials selected from the group consisting of: silicon dioxide, silicon nitride, silicon oxynitride, organic polymers, and combinations thereof.
Claim 11
Dependent Claim
152 words
A semiconductor device which comprises: (a) a first layer of patterned conductors formed on a substrate; (b) a porous dielectric layer deposited between said patterned conductors, said porous dielectric having an average height of 75% to 150% the height of said conductors, said porous dielectric having a porosity in the range of 30% to 95% and an average pore diameter of less than 80 nm; (c) a non-porous dielectric layer deposited over said conductors and said porous dielectric layer; (d) one or more metal-filled vias passing through said non-porous dielectric layer for providing electrical connection to said first patterned conductors; and (e) at least one second-level conductor formed upon said non-porous dielectric layer and electrically connected to said first conductors, whereby the capacitive coupling between conductors on the first layer is substantially reduced compared to a solid silicon dioxide dielectric and the mechanical properties of a solid interlayer dielectric are substantially preserved.
Claim 12
Dependent Claim
152 words
A semiconductor device which comprises: (a) a first layer of patterned conductors formed on a substrate; (b) a porous dielectric layer deposited between said patterned conductors, said porous dielectric having an average height of 75% to 150% the height of said conductors, said porous dielectric having a porosity in the range of 30% to 95% and an average pore diameter of less than 80 nm; (c) a non-porous dielectric layer deposited over said conductors and said porous dielectric layer; (d) one or more metal-filled vias passing through said non-porous dielectric layer for providing electrical connection to said first patterned conductors; and (e) at least one second-level conductor formed upon said non-porous dielectric layer and electrically connected to said first conductors, whereby the capacitive coupling between conductors on the first layer is substantially reduced compared to a solid silicon dioxide dielectric and the mechanical properties of a solid interlayer dielectric are substantially preserved.
Claim 13
Dependent Claim
34 words
The semiconductor device of claim 10, wherein said non-porous dielectric layer is comprised of at least a bottom sublayer and a top sublayer, said bottom sublayer being conformal and said top sublayer being planarized.
Claim 14
Dependent Claim
21 words
The semiconductor device of claim 10, further comprising a passivating layer covering the sides and tops of said first patterned conductors.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-04 | 2001-11-03 | 2002-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-04 | 2005-11-03 | 2006-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-04 | 2009-11-03 | 2010-05-05 | $7700.00 | Window Closed / Lapsed |