US5741725A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication process for semiconductor device having MOS type field effect transistor
Assignee: NEC Electronics Corp
•
Filing: 1996-02-26
•
Granted: 1998-04-21
•
Expires: 2016-02-26
Abstract
Abstract A titanium layer is formed by depositing titanium over entire surface of a gate electrode, a P-type silicon substrate, an insulation layer, an oxide layer and so forth. By effecting first RTA (Rapid Thermal Annealing) under nitrogen atmosphere, titanium silicide layer of C49 type structure is formed. At this time, the regions of the titanium layer which are on the oxide layer and the insulation layer and upper part of the region of the titanium layer which is formed on the silicon substrate are reacted with N 2 gas to produce titanium nitride layer. In conjunction therewith, titanium layer on the surface of the insulation layer and the oxide layer is slightly reacted to form titanium silicide thin film. Subsequently, only titanium nitride is selectively removed. Thereafter, under oxygen atmosphere, second RTA is performed at 850° C. for 10 sec. to oxidize the titanium silicide thin film to make it insulative. At the same time, the titanium silicide layer of C49 type structure is caused phase transition into titanium silicide layer of C54 type structure with lowering of electric resistivity.
Inventors
- 👤 Ken Inoue
- 👤 Kunihiro Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
67 words
A fabrication process for a semiconductor device having a MOS type field effect transistor comprising the steps of: selectively forming an insulation layer on a semiconductor layer, whereby a surface of said semiconductor layer is selectively exposed; forming a refractory metal silicide layer on the exposed surface of said semiconductor layer and said insulation layer; and oxidizing said refractory metal silicide layer formed on said insulation layer.
Claim 2
Dependent Claim
67 words
A fabrication process for a semiconductor device having a MOS type field effect transistor comprising the steps of: selectively forming an insulation layer on a semiconductor layer, whereby a surface of said semiconductor layer is selectively exposed; forming a refractory metal silicide layer on the exposed surface of said semiconductor layer and said insulation layer; and oxidizing said refractory metal silicide layer formed on said insulation layer.
Claim 3
Dependent Claim
108 words
A fabrication process for a semiconductor device having a MOS type field effect transistor comprising: a first step of selectively forming an insulation layer on a semiconductor substrate; a second step of depositing a refractory metal layer on said semiconductor substrate and said insulation layer; a third step of siliciding the refractory metal layer on said semiconductor substrate and forming a refractory metal silicide layer, in which a part of the refractory metal layer on said insulation layer is silicided to form a refractory metal silicide thin film; and a fourth step of oxidizing the refractory metal silicide thin film formed on said insulation layer to be insulative.
Claim 4
Dependent Claim
108 words
A fabrication process for a semiconductor device having a MOS type field effect transistor comprising: a first step of selectively forming an insulation layer on a semiconductor substrate; a second step of depositing a refractory metal layer on said semiconductor substrate and said insulation layer; a third step of siliciding the refractory metal layer on said semiconductor substrate and forming a refractory metal silicide layer, in which a part of the refractory metal layer on said insulation layer is silicided to form a refractory metal silicide thin film; and a fourth step of oxidizing the refractory metal silicide thin film formed on said insulation layer to be insulative.
Claim 5
Dependent Claim
42 words
A fabrication process for a semiconductor device as set forth in claim 2, which further comprises a fifth step of removing non-silicided part of said refractory metal layer which is not silicided on said insulation layer, between said third and fourth steps.
Claim 6
Dependent Claim
53 words
A fabrication process for a semiconductor device as set forth in claim 2, which further comprises a sixth step of depositing an interlayer insulation layer on said refractory metal silicide layer and said refractory metal silicide thin film, and a seventh step of annealing of said interlayer insulation layer, after said fourth step.
Claim 7
Dependent Claim
44 words
A fabrication process for a semiconductor device as set forth in claim 2, which further comprises an eighth step of depositing an interlayer insulation layer on said refractory metal silicide layer and said refractory metal silicide thin film, between said third and fourth steps.
Claim 8
Dependent Claim
48 words
A fabrication process for a semiconductor device as set forth in claim 2, wherein in said third step, a thermal process causes reaction of a semiconductor material formed on said semiconductor substrate with a refractory metal forming said refractory metal layer to form said refractory metal silicide layer.
Claim 9
Dependent Claim
34 words
A fabrication process for a semiconductor device as set forth in claim 2, wherein in said fourth step, said refractory metal silicide thin film is oxidized by performing heat treatment under oxidizing gas atmosphere.
Claim 10
Dependent Claim
27 words
A fabrication process for a semiconductor device as set forth in claim 7, wherein said heat treatment is performed at 800° to 850° C. for 10 sec.
Claim 11
Dependent Claim
35 words
A fabrication process for a semiconductor device as set forth in claim 2, wherein in said fourth step, said refractory metal silicide thin film is oxidized by plasma process of oxidizing gas for 1 min.
Claim 12
Dependent Claim
43 words
A fabrication process for a semiconductor device as set forth in claim 2, wherein in said fourth step, said refractory metal silicide thin film is oxidized by heat treatment at 800° to 850° C. for 10 sec. under plasma atmosphere of oxidizing gas.
Claim 13
Dependent Claim
25 words
A fabrication process for a semiconductor device as set forth in claim 4, wherein said interlayer insulation layer is formed with a silicon oxide layer.
References Cited (Backward Citations)
US4533935A
Cited
US4636833A
Cited
US4545116A
Cited
US4665608A
Cited
US5187122A
Cited
US5043300A
Cited
US5227320A
Cited
US5340761A
Cited
US5405789A
Cited
US5444006A
Cited
US5429979A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-20 | 2005-10-20 | 2006-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-20 | 2009-10-20 | 2010-04-21 | $7700.00 | Window Closed / Lapsed |