Thin film formation apparatus

Claim 2

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel; a starting gas source for introducing starting gas into said reactor vessel; a plasma generator in said reactor vessel for producing a plasma from the starting gas; a hydrogen source providing hydrogen for introduction into said vessel; and a hydrogen radical generator generating hydrogen radicals by decomposing the hydrogen, said hydrogen radical generator including a microwave oscillator, an elongated hydrogen radical distribution vessel including an elongated hydrogen radical blowing port in said reactor vessel for distributing hydrogen radicals uniformly over the substrate, a hydrogen introducing conduit supplying hydrogen from said source thereof to said distribution vessel, an antenna in said distribution vessel receiving microwaves from said microwave oscillator, and a shield positioned at said blowing port allowing flow of hydrogen radicals and preventing microwaves from entering the reactor vessel.

Claim 3

Thin film formation apparatus as set forth in claim 1, wherein said shield comprises a microwave shield formed from wire mesh.

Claim 4

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distributor connected to said starting gas source and comprising a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over a substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; and a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space, whereby a film of amorphous material is formed on said substrate on said supporting surface, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate on said supporting surface so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 5

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distributor connected to said starting gas source and comprising a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over a substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; and a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space, whereby a film of amorphous material is formed on said substrate on said supporting surface, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate on said supporting surface so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 6

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distribution system releasing starting gas uniformly over the substrate; a plasma generator in said reactor vessel for producing a plasma from the starting gas; a hydrogen source providing hydrogen for introduction into the reactor vessel; and a hydrogen radical generator generating hydrogen radicals in said reactor vessel by decomposing the hydrogen introduced into the reactor vessel, said hydrogen radical generator including a microwave oscillator, an elongated hydrogen radical distribution vessel including an elongated hydrogen radical blowing port in said reactor vessel for distributing hydrogen radicals uniformly over the substrate, a hydrogen introducing conduit supplying hydrogen from said source thereof to said distribution vessel, an antenna in said distribution vessel receiving microwaves from said microwave oscillator, and a shield positioned at said blowing port allowing flow of hydrogen radicals and preventing microwaves from entering the reactor vessel.

Claim 7

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distribution system releasing starting gas uniformly over the substrate; a plasma generator in said reactor vessel for producing a plasma from the starting gas; a hydrogen source providing hydrogen for introduction into the reactor vessel; and a hydrogen radical generator generating hydrogen radicals in said reactor vessel by decomposing the hydrogen introduced into the reactor vessel, said hydrogen radical generator including a microwave oscillator, an elongated hydrogen radical distribution vessel including an elongated hydrogen radical blowing port in said reactor vessel for distributing hydrogen radicals uniformly over the substrate, a hydrogen introducing conduit supplying hydrogen from said source thereof to said distribution vessel, an antenna in said distribution vessel receiving microwaves from said microwave oscillator, and a shield positioned at said blowing port allowing flow of hydrogen radicals and preventing microwaves from entering the reactor vessel.

Claim 8

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distribution system connected to said starting gas source and comprising a distributor including a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over a substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space; and a hydrogen distributor for distributing hydrogen radicals uniformly over a substrate on the supporting surface, whereby a film of amorphous material is formed on said substrate, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 9

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distribution system connected to said starting gas source and comprising a distributor including a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over a substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space; and a hydrogen distributor for distributing hydrogen radicals uniformly over a substrate on the supporting surface, whereby a film of amorphous material is formed on said substrate, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 10

Thin film formation apparatus for depositing a hydrogenated amorphous silicon film on a substrate, said apparatus comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a substrate on said supporting surface, said substrate having an amorphous silicon layer on a surface thereof; a starting gas piping and distribution system introducing a starting gas containing carbon and silicon atoms into said reactor vessel, said starting gas piping and distribution system including a starting gas distributor comprising a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over said substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said amorphous silicon layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system for decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of an amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 11

Thin film formation apparatus for depositing a hydrogenated amorphous silicon film on a substrate, said apparatus comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a substrate on said supporting surface, said substrate having an amorphous silicon layer on a surface thereof; a starting gas piping and distribution system introducing a starting gas containing carbon and silicon atoms into said reactor vessel, said starting gas piping and distribution system including a starting gas distributor comprising a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over said substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said amorphous silicon layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system for decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of an amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 12

Thin film formation apparatus for depositing a hydrogenated amorphous silicon film on a substrate, said apparatus comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a substrate on said supporting surface, said substrate having a photosensitive layer on a surface thereof; a starting gas piping and distribution system introducing a starting gas containing carbon and silicon atoms into said reactor vessel, said starting gas piping and distribution system including a starting gas distributor comprising a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over said substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said photosensitive layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system for decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of an amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 13

Thin film formation apparatus for depositing a hydrogenated amorphous silicon film on a substrate, said apparatus comprising: a reactor vessel; a substrate support provided with a substrate supporting surface located in the vessel; a substrate on said supporting surface, said substrate having a photosensitive layer on a surface thereof; a starting gas piping and distribution system introducing a starting gas containing carbon and silicon atoms into said reactor vessel, said starting gas piping and distribution system including a starting gas distributor comprising a perforated gas distributing surface located in said vessel, said distributing surface having a plurality of openings therethrough arranged for releasing starting gas uniformly over said substrate on said supporting surface, said supporting surface and said distributing surface presenting a deposition space therebetween; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said photosensitive layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system for decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of an amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 14

A thin film formation apparatus as set forth in claim 3 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 15

A thin film formation apparatus as set forth in claim 3 wherein said hydrogen radical generator comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.

Claim 16

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel having a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distributor connected to said starting gas source and comprising a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over a substrate on said support; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; and a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space, whereby a film of amorphous material is formed on said substrate on said supporting surface, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate on said supporting surface so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 17

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel having a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distributor connected to said starting gas source and comprising a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over a substrate on said support; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; and a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space, whereby a film of amorphous material is formed on said substrate on said supporting surface, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate on said supporting surface so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 18

A thin film formation apparatus as set forth in claim 10 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 19

A thin film formation apparatus as set forth in claim 10 wherein said hydrogen radical generator comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.

Claim 20

A thin film formation apparatus as set forth in claim 5 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 21

A thin film formation apparatus as set forth in claim 5 wherein said hydrogen distributor comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.

Claim 22

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel having a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distribution system connected to said starting gas source and comprising a distributor including a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over a substrate on said support; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space; and a hydrogen distributor for distributing hydrogen radicals uniformly over a substrate on the supporting surface, whereby a film of amorphous material is formed on said substrate, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 23

Thin film formation apparatus for depositing hydrogenated amorphous substances on a substrate comprising: a reactor vessel having a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a starting gas source for introducing starting gas into said reactor vessel; a starting gas distribution system connected to said starting gas source and comprising a distributor including a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over a substrate on said support; a plasma generator for forming a plasma from the starting gas in said deposition space; a hydrogen source providing hydrogen for the deposition process; a hydrogen radical generator for decomposing said hydrogen to thereby generate hydrogen radicals for introduction into the deposition space; and a hydrogen distributor for distributing hydrogen radicals uniformly over a substrate on the supporting surface, whereby a film of amorphous material is formed on said substrate, said hydrogen radical generator and said hydrogen source together being arranged and configured to introduce a sufficient amount of hydrogen radicals into said deposition space and to direct the radicals toward said substrate so that a surface of an amorphous film being formed on the substrate is covered with hydrogen radicals.

Claim 24

A thin film formation apparatus as set forth in claim 15 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 25

A thin film formation apparatus as set forth in claim 15 wherein said hydrogen distributor comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.

Claim 26

A thin film formation apparatus as set forth in claim 6 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 27

A thin film formation apparatus as set forth in claim 6 wherein said hydrogen radical generator and distribution system comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.

Claim 28

Thin film formation apparatus for depositing a hydrogenated amorphous silicon carbide film on a substrate, said apparatus comprising: a reactor vessel defining a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a substrate on said supporting surface, said substrate having an amorphous silicon layer on a surface thereof; a starting gas piping and distribution system for introducing a starting gas containing carbon and silicon atoms into said deposition space, said starting gas piping and distribution system comprising a starting gas distributor including a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing said starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over said substrate on said support; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said amorphous silicon layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of said amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 29

Thin film formation apparatus for depositing a hydrogenated amorphous silicon carbide film on a substrate, said apparatus comprising: a reactor vessel defining a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a substrate on said supporting surface, said substrate having an amorphous silicon layer on a surface thereof; a starting gas piping and distribution system for introducing a starting gas containing carbon and silicon atoms into said deposition space, said starting gas piping and distribution system comprising a starting gas distributor including a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing said starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over said substrate on said support; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said amorphous silicon layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of said amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 30

A thin film formation apparatus as set forth in claim 20 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 31

A thin film formation apparatus as set forth in claim 20 wherein said hydrogen radical generator and distribution system comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.

Claim 32

A thin film formation apparatus as set forth in claim 7 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 33

A thin film formation apparatus as set forth in claim 7 wherein said hydrogen radical generator and distribution system comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.

Claim 34

Thin film formation apparatus for depositing a hydrogenated amorphous silicon carbide film on a substrate, said apparatus comprising: a reactor vessel defining a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a substrate on said supporting surface, said substrate having a photosensitive layer on a surface thereof; a starting gas piping and distribution system for introducing a starting gas containing carbon and silicon atoms into said deposition space, said starting gas piping and distribution system comprising a starting gas distributor including a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing said starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over said substrate on said support; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said photosensitive layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of said amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 35

Thin film formation apparatus for depositing a hydrogenated amorphous silicon carbide film on a substrate, said apparatus comprising: a reactor vessel defining a deposition space therein; a substrate support provided with a substrate supporting surface having a major dimension, said substrate support being located in said deposition space; a substrate on said supporting surface, said substrate having a photosensitive layer on a surface thereof; a starting gas piping and distribution system for introducing a starting gas containing carbon and silicon atoms into said deposition space, said starting gas piping and distribution system comprising a starting gas distributor including a perforated gas distributing surface having a plurality of openings therethrough arranged for releasing said starting gas for movement in a direction toward said supporting surface and transversely of said dimension of said supporting surface so as to distribute said starting gas uniformly over said substrate on said support; a plasma generator generating a plasma from said starting gas and causing a sufficient amount of said plasma to be present in said deposition space thereby causing an amorphous silicon carbide film to form on said photosensitive layer; a hydrogen introduction system introducing gaseous hydrogen into the apparatus; and a hydrogen radical generator and distribution system decomposing said gaseous hydrogen and directing a sufficient amount of hydrogen radicals toward a surface of said amorphous silicon carbide film being formed to uniformly cover said surface of the film with hydrogen radicals.

Claim 36

A thin film formation apparatus as set forth in claim 25 wherein said supporting surface and said distributing surface are electrodes for said plasma generator and said deposition space is a plasma discharge zone.

Claim 37

A thin film formation apparatus as set forth in claim 25 wherein said hydrogen radical generator and distribution system comprises a hydrogen radical blowing port in said reactor vessel for directing hydrogen radicals into said deposition space and distributing the same uniformly over said substrate on the supporting surface.