EP0241317A2
Expired / Lapsed
EP
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Process for forming deposited film
Assignee: Canon Inc
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Filing: 1987-04-13
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Granted: —
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Expires: 2007-04-13
Abstract
Abstract A process for forming a deposited film comprises the steps of: (a) arranging previously a substrate for formation of a deposited film in a film forming space; (b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and (c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
Inventors
- 👤 Yutaka Hirai
- 👤 Shigeru Shirai
- 👤 Jinsho Matsuyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 11:57
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
140 words
A process for forming a deposited film comprising the steps of: (a) arranging previously a substrate for formation of a deposited film in a film forming space; (b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and (c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
Claim 2
Dependent Claim
140 words
A process for forming a deposited film comprising the steps of: (a) arranging previously a substrate for formation of a deposited film in a film forming space; (b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and (c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
Claim 3
Dependent Claim
46 words
The process according to Claim l, wherein during said film forming step (b), the step (d) of promoting rearrangement of the constituent elements in the deposited film is practiced by heating the deposited film formed on said substrate by providing energy generated from heating means thereto.
Claim 4
Dependent Claim
33 words
The process according to Claim l, wherein during said step (c), the step (e) of increacing etching activity of said gaseous substance (E) is practiced by irradiating said gaseous substance (E) with photoenergy.
Claim 5
Dependent Claim
73 words
The process according to Claim l, wherein during said film forming step (b), the step (d) of promoting rearrangment of the constituent elements in the deposited film is practiced by heating the deposited film formed on said substrate by providing energy generated from heating means thereto, and during said step (c), the step (e) of increasing etching activity of said gaseous substance (E) is practiced by irradiating said gaseous substance (E) with photoenergy.
Claim 6
Dependent Claim
44 words
The process according to Claim l, wherein said compound (SX) is a chain halogenated silicon represented by Si u Y 2u+2 (wherein u is an integer of l or more and Y is at least one element selected from F, Cl, Br and I).
Claim 7
Dependent Claim
65 words
The process according to Claim l, wherein said compound (SX) is a chain or cyclic compound represented by the formula Si u H x Y y (wherein u , x and y are integers of l or more, x + y = 2u or x + y = 2u + 2, and Y is at least one element selected from F, Cl, Br and I).
Claim 8
Dependent Claim
27 words
The process according to Claim l, wherein either one of hydrogen and halogen is used in addition to said compound (SX) during decomposition of said compound (SX).
Claim 9
Dependent Claim
24 words
The process according to Claim l, wherein said chemical substance (B) for film formation is either one of hydrogen gas or a halogen gas.
Claim 10
Dependent Claim
36 words
The process according to Claim l, wherein the flow rate ratio of said activated species (A) to said activated species (B) during introduction into the film forming space is l0 : l to l : l0.
Claim 11
Dependent Claim
31 words
l0. The process according to Claim l, wherein a compound containing an impurity element as the component is used together with said compound (SX) during formation of said activated species (A).
Claim 12
Dependent Claim
34 words
The process according to Claim l, wherein a compound containing an impurity element as the component is used together with said chemical substance (B) for film formation during formation of said active species (B).
Claim 13
Dependent Claim
29 words
The process according to Claim l, wherein an activated species (D) formed from a compound containing an impurity element as the component is introduced into said film forming space.
References Cited (Backward Citations)
No citation records indexed.
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