US5739574A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI semiconductor device with low concentration of electric field around the mesa type silicon
Assignee: Sharp Corp
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Filing: 1995-06-02
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Granted: 1998-04-14
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Expires: 2015-06-02
Abstract
Abstract A semiconductor device which includes a mesa type silicon film with a source/drain region and a channel region formed therein, a gate oxide film formed on the mesa type silicon film, and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate film is formed at the top edge section of the mesa type silicon which is present under the gate electrode, as well as a method for manufacturing it.
Inventors
- 👤 Kazuyo Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0312; H10D30/0314; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/674; H10D86/00; H10D86/01; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10D30/6757; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
82 words
A semiconductor device comprising: a mesa type silicon film with a source/drain region and a channel region formed therein; a gate oxide film formed on the mesa type silicon film; and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate oxide film is formed only on the top edge section of the mesa type silicon film which is present under the gate electrode.
Claim 2
Dependent Claim
82 words
A semiconductor device comprising: a mesa type silicon film with a source/drain region and a channel region formed therein; a gate oxide film formed on the mesa type silicon film; and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate oxide film is formed only on the top edge section of the mesa type silicon film which is present under the gate electrode.
Claim 3
Dependent Claim
27 words
The semiconductor device according to claim 1, wherein the mesa type silicon film has a spacer formed along each sidewall which is present under the gate electrode.
Claim 4
Dependent Claim
15 words
A semiconductor device as in claim 2 wherein each spacer is formed of silicon nitride.
Claim 5
Dependent Claim
29 words
A semiconductor device as in claim 1 wherein the oxide film having a thickness greater than the gate oxide film is formed in the shape of a bird's beak.
Claim 6
Dependent Claim
29 words
A semiconductor device as in claim 2 wherein the oxide film having a thickness greater than the gate oxide film is formed in the shape of a bird's beak.
Claim 7
Dependent Claim
28 words
A semiconductor device as in claim 1 wherein the oxide having a thickness greater than the gate oxide film has a maximum thickness of 5 to 300 nm.
Claim 8
Dependent Claim
19 words
A semiconductor device as in claim 1 wherein the mesa type silicon film is formed on an insulating substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-13 | 2001-10-13 | 2002-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-13 | 2005-10-13 | 2006-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-13 | 2009-10-13 | 2010-04-14 | $7700.00 | Window Closed / Lapsed |