US3690968A
Expired / Lapsed
US
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Method for forming a field effect device
Assignee: Advanced Memory Systems Inc
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Filing: 1971-03-05
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Granted: 1972-09-12
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Expires: 1991-03-05
Abstract
Abstract A METHOD FOR FABRICATING SEMICONDUCTOR DEVICES BY MEANS OF CERTAIN IN-SITU AND ENCAPSULATING OPERATIONS THUS MINIMIZINGS OF DESENSITIZING THE ENVIRONMENTAL CONTAMINANTS. THE INVENTED PROCESS WHEN USED TO PRODUCE INSULATED GATE FIELD EFFECT TRANSISTORS PRODUCERS IMPROVED PROCESS YIELDS AND DEVICES WITH IMPROVED ELECTRICAL CHARACTERISTICS.
Inventors
- 👤 Charles H Fa
- 👤 Clarence K Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:30
CPC Classifications
H; H10; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/122; Y10S65/00; Y10S65/11
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-12 | 1976-03-13 | 1976-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-12 | 1980-03-13 | 1980-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-12 | 1984-03-13 | 1984-09-12 | $7700.00 | Window Closed / Lapsed |