US5381029A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same
Assignee: Mitsubishi Electric Corp
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Filing: 1992-02-21
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Granted: 1995-01-10
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Expires: 2012-02-21
Abstract
Abstract A semiconductor device capable of effectively preventing a dielectric breakdown of a gate oxide film without adversely affecting the characteristics of a transistor and a process of manufacturing the same are disclosed. The semiconductor device comprises a SOI film 2 whose upper angular parts are rounded off by sputter etching and a gate oxide film 3 formed on SOI film 2 with an almost uniform thickness. Therefore, electric field concentration in the upper angular parts of SOI film 2 is reduced. Furthermore, the control characteristics of the transistor are enhanced by the uniform gate oxide film 3. As a result, a dielectric breakdown of the gate oxide film is effectively prevented without adversely affecting the characteristics of the transistor. Sputter etching enabling processing at a low temperature is used, so that the upper angular parts of SOI film 2 are rounded off without adversely affecting a semiconductor element formed in the lower layer.
Inventors
- 👤 Koji Eguchi
- 👤 Natsuo Ajika
- 👤 Kazuyuki Sugahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D86/00; H10D86/201; H10D88/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
129 words
A semiconductor device comprising: an insulating layer; a semiconductor layer formed on said insulating layer to define source/drain regions; a gate insulating film formed on said semiconductor layer with a substantially uniform thickness; and a gate electrode formed on said gate insulating film; wherein the transverse sectional form of said semiconductor layer comprises a lower trapezoid including a bottom side in contact with said insulating layer, an upper side, and lateral sides and an upper trapezoid including a bottom side which is the upper side of said lower trapezoid, an upper side, and lateral sides, and the included angles between the bottom side and the lateral sides of said lower trapezoid are larger than the included angles between the bottom side and the lateral sides of said upper trapezoid.
Claim 2
Dependent Claim
129 words
A semiconductor device comprising: an insulating layer; a semiconductor layer formed on said insulating layer to define source/drain regions; a gate insulating film formed on said semiconductor layer with a substantially uniform thickness; and a gate electrode formed on said gate insulating film; wherein the transverse sectional form of said semiconductor layer comprises a lower trapezoid including a bottom side in contact with said insulating layer, an upper side, and lateral sides and an upper trapezoid including a bottom side which is the upper side of said lower trapezoid, an upper side, and lateral sides, and the included angles between the bottom side and the lateral sides of said lower trapezoid are larger than the included angles between the bottom side and the lateral sides of said upper trapezoid.
Claim 3
Dependent Claim
88 words
A semiconductor device comprising: an insulating layer; a semiconductor layer formed on said insulating layer to define source/drain regions; a gate insulating film formed on said semiconductor layer with a substantially uniform thickness; and a gate electrode formed on said gate insulating film, the vertical profile of the entire semiconductor layer being defined by a plurality of straight line segments together forming a concave curve with respect to the surface of the insulating layer, greater than two connecting pairs of said segments intersecting each other at obtuse angles.
Claim 4
Dependent Claim
88 words
A semiconductor device comprising: an insulating layer; a semiconductor layer formed on said insulating layer to define source/drain regions; a gate insulating film formed on said semiconductor layer with a substantially uniform thickness; and a gate electrode formed on said gate insulating film, the vertical profile of the entire semiconductor layer being defined by a plurality of straight line segments together forming a concave curve with respect to the surface of the insulating layer, greater than two connecting pairs of said segments intersecting each other at obtuse angles.
Claim 5
Dependent Claim
157 words
A semiconductor device comprising: an insulating layer; a semiconductor layer of common conductivity type throughout formed on said insulating layer to define source/drain regions and having bottom surface adjacent said insulating layer and upper surface opposite to said bottom surface, the impurity concentration of said semiconductor layer at a peripheral region thereof being no greater than that at a central region thereof; a gate insulating film covering the upper surface of said semiconductor layer with a substantially uniform thickness; and a gate electrode formed on said gate insulating film; wherein the two opposed side surfaces of said semiconductor layer placed beneath said gate electrode are arcuate surfaces extending from said bottom surface to said upper surface and said side surfaces of said semiconductor layer are concave with respect to a surface of said semiconductor layer enclosed with said side surfaces, wherein the entire side surfaces of said semiconductor layer located beneath said gate electrode are arcuate surfaces.
Claim 6
Dependent Claim
157 words
A semiconductor device comprising: an insulating layer; a semiconductor layer of common conductivity type throughout formed on said insulating layer to define source/drain regions and having bottom surface adjacent said insulating layer and upper surface opposite to said bottom surface, the impurity concentration of said semiconductor layer at a peripheral region thereof being no greater than that at a central region thereof; a gate insulating film covering the upper surface of said semiconductor layer with a substantially uniform thickness; and a gate electrode formed on said gate insulating film; wherein the two opposed side surfaces of said semiconductor layer placed beneath said gate electrode are arcuate surfaces extending from said bottom surface to said upper surface and said side surfaces of said semiconductor layer are concave with respect to a surface of said semiconductor layer enclosed with said side surfaces, wherein the entire side surfaces of said semiconductor layer located beneath said gate electrode are arcuate surfaces.
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