Flattening method of selectively epitaxial grown layer

Abstract

Abstract PURPOSE:To enable to flatten a selectively epitaxial grown layer by a method wherein an etching method is used in which the etching speed is rather large when the incidence of an etching medium is inclined in relation to an etching surface. CONSTITUTION:An SiO2 film 2 is formed on the surface of an Si substrate 1. The desired openings are formed in succession, and epitaxial growth of Si is performed from the top surface thereof to form Si epitaxial grown layers 3a, 3b. At this time, protrusions 4 are generated at the peripheries of the opening parts, and moreover clusters 5 are formed on the film 2. Then high-frequency sputter etching is performed from the upper part of the layers 3a, 3b and the film 2. When high-frequency sputter etching is performed in such a way, the slanting surfaces are etched higher than the flat parts at first to remove the clusters 5 and the protrusions 4, etc. The etching speed at the horizontal is slow sgainst thereto. Accordingly, flattening of the selectively epitaxial growth layer can be attained.

Inventors

• 👤 Hiromi Sakurai
• 👤 桜井　弘美
• 👤 Hirotomo Ooga
• 👤 大賀　弘朝
• 👤 Hirotsugu Harada
• 👤 原田　「ひろ」嗣

Bibliographic Details