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US5733806A
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Method for forming a self-aligned semiconductor device
Assignee: NXP USA Inc
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Filing: 1995-09-05
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Granted: 1998-03-31
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Expires: 2015-09-05
Abstract
Abstract A method for forming a self-aligned semiconductor device (10) having sidewall spacers (16,17) used to align the formation of a source region (23) and a drain region (24) along with the formation of a gate structure (35). Spacers (16,17) can be formed using a sacrificial structure process where a sacrificial structure (14) is formed which determines the location of a final gate structure (35). The deposition of a dielectric layer over the sacrificial structure (14) and subsequent etch will form spacers (16,17). A second method for forming spacers (18,19), uses a photolithographic process to pattern a dielectric layer without the use of a sacrificial structure process. The spacers (16,17) are used in conjunction with implant mask regions (22) to form the source and drain regions (23,24) which are aligned to the gate structure (35). The spacers (16,17) are also used to form the gate structure (35) in conjunction with the deposition of a refractory metal layer (32) and a metal layer (33) followed by a Reactive Ion Etch.
Inventors
- 👤 Gordon M. Grivna
- 👤 Karl J. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:31
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0614; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10D64/20; H10D64/27; H10D64/311; H10D64/411
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
114 words
A method for forming a self-aligned semiconductor device comprising the steps of: forming a first dielectric layer overlying a semiconductor substrate; forming a first spacer and a second spacer on the first dielectric layer, wherein a gate region is defined between the first spacer and the second spacer over the semiconductor substrate; forming a source region and a drain region after the step of forming the first spacer and the second spacer; forming a second dielectric layer overlying the semiconductor substrate and overlying the first spacer and the second spacer, including the gate region; removing portions of the second dielectric layer from the gate region; and forming a gate structure in the gate region.
Claim 2
Independent Claim
114 words
A method for forming a self-aligned semiconductor device comprising the steps of: forming a first dielectric layer overlying a semiconductor substrate; forming a first spacer and a second spacer on the first dielectric layer, wherein a gate region is defined between the first spacer and the second spacer over the semiconductor substrate; forming a source region and a drain region after the step of forming the first spacer and the second spacer; forming a second dielectric layer overlying the semiconductor substrate and overlying the first spacer and the second spacer, including the gate region; removing portions of the second dielectric layer from the gate region; and forming a gate structure in the gate region.
Claim 3
Dependent Claim
70 words
The method for forming a self-aligned semiconductor device of claim 1, wherein the step of forming the first spacer and the second spacer further comprises the steps of: forming a sacrificial structure overlying the first dielectric layer; forming a third dielectric layer overlying the sacrificial structure; and removing portions of the third dielectric layer, and wherein the first spacer and the second spacer are formed juxtaposed to the sacrificial structure.
Claim 4
Dependent Claim
20 words
The method for forming a self-aligned semiconductor device of claim 2 further comprising the step of removing the sacrificial structure.
Claim 5
Dependent Claim
70 words
The method for forming a self-aligned semiconductor device of claim 1, wherein the step of forming the first spacer and the second spacer further comprises the steps of: forming a third dielectric layer overlying the first dielectric layer; forming an etch block layer overlying the third dielectric layer, wherein the etch block layer forms exposed portions of the third dielectric layer; and removing exposed portions of the third dielectric layer.
Claim 6
Dependent Claim
39 words
The method for forming a self-aligned semiconductor device of claim 4, wherein the step of forming an etch block layer overlying the third dielectric layer comprises the step of forming a photoresist layer which has been exposed and developed.
Claim 7
Dependent Claim
64 words
The method for forming a self-aligned semiconductor device of claim 1, wherein the step of forming a gate structure in the gate region further comprises the steps of: forming a conductive layer overlying the semiconductor substrate; patterning the conductive layer with an etch block layer such that there are exposed portions of the conductive layer; and removing the exposed portions of the conductive layer.
Claim 8
Dependent Claim
80 words
The method for forming a self-aligned semiconductor device of claim 1, wherein the step of forming a gate structure in the gate region further comprises the steps of: forming a lift-off layer overlying the second dielectric layer including in the gate region; removing the lift-off layer in the gate region; forming a conductive layer overlying the lift-off layer including in the gate region; and removing the lift-off layer such that the conductive layer is removed except in the gate region.
Claim 9
Dependent Claim
36 words
The method for forming a self-aligned semiconductor device of claim 1, wherein the step of forming the first dielectric layer uses a material selected from the group consisting of silicon dioxide, silicon nitride, and aluminum nitride.
Claim 10
Dependent Claim
23 words
The method for forming a self-aligned semiconductor device of claim 1, wherein the first dielectric layer is 100 angstroms to 1000 angstroms thick.
Claim 11
Independent Claim
126 words
A method for forming a semiconductor device comprising the steps of: forming a first dielectric layer overlying a body of semiconductor material; forming a sacrificial structure having a first side and a second side on the first dielectric layer; forming a first spacer adjacent to the first side and a second spacer adjacent to the second side; removing the sacrificial structure; forming a second dielectric layer overlying the body of semiconductor material including the first spacer and the second spacer and a region between the first spacer and the second spacer; removing a portion of the second dielectric layer from the region between the first spacer and the second spacer; and forming a gate structure in the region between the first spacer and the second spacer.
Claim 12
Independent Claim
126 words
A method for forming a semiconductor device comprising the steps of: forming a first dielectric layer overlying a body of semiconductor material; forming a sacrificial structure having a first side and a second side on the first dielectric layer; forming a first spacer adjacent to the first side and a second spacer adjacent to the second side; removing the sacrificial structure; forming a second dielectric layer overlying the body of semiconductor material including the first spacer and the second spacer and a region between the first spacer and the second spacer; removing a portion of the second dielectric layer from the region between the first spacer and the second spacer; and forming a gate structure in the region between the first spacer and the second spacer.
Claim 13
Dependent Claim
22 words
The method for forming a semiconductor device of claim 10, wherein the first dielectric layer is 100 angstroms to 1000 angstroms thick.
Claim 14
Dependent Claim
35 words
The method for forming a semiconductor device of claim 10, wherein the step of forming the first dielectric layer uses a material selected from the group consisting of silicon dioxide, silicon nitride, and aluminum nitride.
Claim 15
Dependent Claim
96 words
The method for forming a semiconductor device of claim 10, wherein the step of forming a gate structure in the region between the first spacer and the second spacer further comprises the steps of: forming a lift off layer overlying the second dielectric layer; removing the lift off layer in the region between the first spacer and the second spacer; forming a conductive layer overlying the lift off layer; and removing the lift off layer such that the conductive layer is removed except a portion in the region between the first spacer and the second spacer.
Claim 16
Dependent Claim
72 words
The method for forming a semiconductor device of claim 10, wherein the step of forming a gate structure in the region between the first spacer and the second spacer further comprises the steps of: forming a conductive layer overlying the body of semiconductor material; patterning the conductive layer with an etch block layer such that there are exposed portions of the conductive layer; and removing the exposed portions of the conductive layer.
Claim 17
Independent Claim
85 words
A method for forming a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a first dielectric layer overlying the semiconductor substrate, wherein the first dielectric layer is about 100 angstroms to 1000 angstroms thick; forming a second dielectric layer on the first dielectric layer; patterning the second dielectric layer; forming a third dielectric layer on remaining portions of the second dielectric layer, wherein the third dielectric layer is an inorganic material; and removing portions of the third dielectric layer to form spacers.
Claim 18
Independent Claim
85 words
A method for forming a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a first dielectric layer overlying the semiconductor substrate, wherein the first dielectric layer is about 100 angstroms to 1000 angstroms thick; forming a second dielectric layer on the first dielectric layer; patterning the second dielectric layer; forming a third dielectric layer on remaining portions of the second dielectric layer, wherein the third dielectric layer is an inorganic material; and removing portions of the third dielectric layer to form spacers.
Claim 19
Dependent Claim
35 words
The method for forming a semiconductor device of claim 15, wherein the step of forming the first dielectric layer uses a material selected from the group consisting of silicon dioxide, silicon nitride, and aluminum nitride.
Claim 20
Dependent Claim
75 words
The method for forming a semiconductor device of claim 15 further comprising the steps of: forming a fourth dielectric layer overlying the spacers and between the spacers; removing a portion of the fourth dielectric layer between the spacers; forming a conductive layer overlying the fourth dielectric layer; patterning the conductive layer with an etch block layer such that there are exposed portions of the conductive layer; and removing the exposed portions of the conductive layer.
Claim 21
Dependent Claim
107 words
The method for forming a semiconductor device of claim 15 further comprising the steps of: forming a fourth dielectric layer overlying the semiconductor substrate including overlying the spacers and a region between the spacers; removing a portion of the fourth dielectric layer from the region between the spacers; forming a lift off layer overlying the fourth dielectric layer and in the region between the spacers; removing the lift off layer from the region between the spacers; forming a conductive layer overlying the lift off layer; and removing the lift off layer such that the conductive layer is removed except the portion in the region between the spacers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-30 | 2001-09-29 | 2002-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-30 | 2005-09-29 | 2006-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-30 | 2009-09-29 | 2010-03-31 | $7700.00 | Window Closed / Lapsed |