Patent US5728610A successfully refreshed from Google Patents.
US5728610A
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Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics
Assignee: Sony Corp
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Filing: 1996-06-28
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Granted: 1998-03-17
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Expires: 2016-06-28
Abstract
Abstract A polycrystalline silicon film formed of an active layer of a thin film transistor is entirely hydrogenated by a low-temperature process, thereby lowering the resistance and relaxing the electric field in the vicinity of the drain to reduce the leakage current. A gate and an insulating film that covers it are formed on a substrate having an insulating surface. A hydrogenated polycrystalline silicon film is formed over the substrate, including the gate, with the insulating film interposed therebetween. A silicon oxide film pattern is formed on the polycrystalline silicon film directly above the gate. Source/drain regions are formed on the polycrystalline silicon film substantially at two external sides of the silicon oxide film pattern. The source/drain regions are formed from a hydrogen-containing amorphous silicon film, a conductive silicon film and a metal film, which are successively stacked on the polycrystalline silicon film. Accordingly, the hydrogen-containing amorphous silicon film functions as an offset region.
Inventors
- 👤 Dharam Pal Gosain
- 👤 Jonathan Westwater
- 👤 Setsuo Usui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:38
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P10/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
195 words
A method of producing a thin film transistor, comprising the steps of: providing a substrate having insulating properties and providing a gate on a surface of the substrate; forming an insulating film, including in sequence a silicon nitride film and a gate insulating film which is comprised of a silicon oxide film over the substrate and gate, and then forming a polycrystalline silicon film on an upper surface of said insulating film; depositing a silicon oxide film on said polycrystalline silicon film, and then patterning said silicon oxide film to form a silicon oxide film pattern on said polycrystalline silicon film directly above said gate; successively forming a hydrogen-containing amorphous silicon film, a conductive silicon film, and a metal film on said polycrystalline silicon film so as to cover said silicon oxide film pattern; introducing hydrogen from said amorphous silicon film into said polycrystalline silicon film, and also activating conductive impurities in said conductive silicon film by heat treatment; and patterning said metal film, said conductive silicon film, and said amorphous silicon film to form source/drain regions extending from over edges of said silicon oxide film pattern laterally outwardly from said silicon oxide film pattern.
Claim 2
Independent Claim
195 words
A method of producing a thin film transistor, comprising the steps of: providing a substrate having insulating properties and providing a gate on a surface of the substrate; forming an insulating film, including in sequence a silicon nitride film and a gate insulating film which is comprised of a silicon oxide film over the substrate and gate, and then forming a polycrystalline silicon film on an upper surface of said insulating film; depositing a silicon oxide film on said polycrystalline silicon film, and then patterning said silicon oxide film to form a silicon oxide film pattern on said polycrystalline silicon film directly above said gate; successively forming a hydrogen-containing amorphous silicon film, a conductive silicon film, and a metal film on said polycrystalline silicon film so as to cover said silicon oxide film pattern; introducing hydrogen from said amorphous silicon film into said polycrystalline silicon film, and also activating conductive impurities in said conductive silicon film by heat treatment; and patterning said metal film, said conductive silicon film, and said amorphous silicon film to form source/drain regions extending from over edges of said silicon oxide film pattern laterally outwardly from said silicon oxide film pattern.
Claim 3
Dependent Claim
43 words
A method of producing a thin film transistor according to claim 1, including the step of providing an oxide film on a surface of the gate which lies beneath said silicon nitride film when said silicon nitride film is formed over the gate.
Claim 4
Dependent Claim
34 words
The method of producing a thin film transistor according to claim 2 including the step of providing said oxide film on the surface of the gate by anodizing a surface layer of the gate.
Claim 5
Dependent Claim
29 words
The method of producing a thin film transistor according to claim 2 including the step of providing said oxide film on the surface of the gate by plasma oxidation.
Claim 6
Dependent Claim
35 words
The method of producing a thin film transistor according to claim 1, wherein said gate is composed of at least one element selected from the group consisting of molybdenum, tantalum, chromium, copper, titanium, and aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-16 | 2001-09-15 | 2002-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-16 | 2005-09-15 | 2006-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-16 | 2009-09-15 | 2010-03-17 | $7700.00 | Window Closed / Lapsed |