Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To realize the high performance of an insulated-gate fieldeffect transistor by a method wherein an amorphous silicon thin film containing hydrogen is formed, a cap layer is formed on the amorphous silicon thin film and, after that, the hydrogen existing in amorphous silicon is detached and diffused by a heat treatment. CONSTITUTION:An amorphous silicon film 1-9 is deposited on an interlayer insulating film 1-8 by a plasma CVD method or the like. About 10% of hydrogen is contained in the amorphous silicon thin film. Then, a cap layer 1-10 is formed on the amorphous silicon film 1-9; an annealing operation is executed at a temperature of about 300 to 500 deg.C. By the annealing operation, atomic hydrogen is detached from amorphous silicon; it is diffused into the interlayer insulating film and a gate electrode ; it terminates a dangling bond existing at a grain boundary of the polycrystalline silicon. A material to which hydrogen generated from the amorphous silicon is hard to diffuse is used as the cap layer 1-10. In succession, the cap layer 1-10 and the amorphous silicon layer 1-9 are etched and removed; after that, contact electrodes 1-11 in a source region and a drain region are formed; then, a thin-film transistor is completed.

Inventors

• 👤 Hideaki Oka
• 👤 秀明 岡

Bibliographic Details