US5567633A
Expired / Lapsed
US
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Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics
Assignee: Sony Corp
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Filing: 1995-03-29
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Granted: 1996-10-22
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Expires: 2015-03-29
Abstract
Abstract A polycrystalline silicon film formed of an active layer of a thin film transistor is entirely hydrogenated by a low-temperature process, thereby lowering the resistance and relaxing the electric field in the vicinity of the drain to reduce the leakage current. A gate and an insulating film that covers it are formed on a substrate having an insulating surface. A hydrogenated polycrystalline silicon film is formed over the substrate, including the gate, with the insulating film interposed therebetween. A silicon oxide film pattern is formed on the polycrystalline silicon film directly above the gate. Source/drain regions are formed on the polycrystalline silicon film substantially at two external sides of the silicon oxide film pattern. The source/drain regions are formed from a hydrogen-containing amorphous silicon film, a conductive silicon film and a metal film, which are successively stacked on the polycrystalline silicon film. Accordingly, the hydrogen-containing amorphous silicon film functions as an offset region.
Inventors
- 👤 Dharam P. Gosain
- 👤 Jonathan Westwater
- 👤 Setsuo Usui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:40
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P10/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
164 words
A method of producing a thin film transistor, comprising the steps of: providing a substrate having insulating properties and providing a gate on a surface of the substrate; forming an insulating film, including at least a gate insulating film, over the substrate and gate, and then forming a polycrystalline silicon film on an upper surface of said insulating film; depositing a silicon oxide film on said polycrystalline silicon film, and then patterning said silicon oxide film to form a silicon oxide film pattern on said polycrystalline silicon film directly above said gate; successively forming a hydrogen-containing amorphous silicon film, a conductive silicon film, and a metal film on said polycrystalline silicon film so as to cover said silicon oxide film pattern; introducing hydrogen from said amorphous silicon film into said polycrystalline silicon film, and also activating conductive impurities in said conductive silicon film by heat treatment; and patterning said metal film, said conductive silicon film, and said amorphous silicon film to form source/drain regions.
Claim 2
Independent Claim
164 words
A method of producing a thin film transistor, comprising the steps of: providing a substrate having insulating properties and providing a gate on a surface of the substrate; forming an insulating film, including at least a gate insulating film, over the substrate and gate, and then forming a polycrystalline silicon film on an upper surface of said insulating film; depositing a silicon oxide film on said polycrystalline silicon film, and then patterning said silicon oxide film to form a silicon oxide film pattern on said polycrystalline silicon film directly above said gate; successively forming a hydrogen-containing amorphous silicon film, a conductive silicon film, and a metal film on said polycrystalline silicon film so as to cover said silicon oxide film pattern; introducing hydrogen from said amorphous silicon film into said polycrystalline silicon film, and also activating conductive impurities in said conductive silicon film by heat treatment; and patterning said metal film, said conductive silicon film, and said amorphous silicon film to form source/drain regions.
Claim 3
Dependent Claim
66 words
A thin film transistor according to claim 1 wherein after said amorphous silicon film has been deposited on said polycrystalline silicon film so as to cover said silicon oxide film pattern, implanting hydrogen ions into said amorphous silicon film and, at a same time, implanting conductive impurity ions into a surface layer of said amorphous silicon film by ion doping, and thereafter forming said metal film.
Claim 4
Dependent Claim
52 words
A thin film transistor according to claim 1 wherein after said amorphous silicon film has been deposited on said polycrystalline silicon film so as to cover said silicon oxide film pattern, introducing hydrogen ions and conductive impurity ions into said amorphous silicon film by plasma doping, and thereafter, forming said metal film.
Claim 5
Independent Claim
156 words
A method of producing a thin film transistor, comprising the steps of: providing a substrate having insulating properties and providing a gate on a surface of the substrate; forming an insulating film over the substrate and gate, and then forming a polycrystalline silicon film on an upper surface of said insulating film; depositing a silicon oxide film on said polycrystalline silicon film, and then patterning said silicon oxide film to form a silicon oxide film pattern on said polycrystalline silicon film above said gate; successively forming a hydrogen-containing amorphous silicon film, a conductive silicon film, and a metal film on said polycrystalline silicon film so as to cover said silicon oxide film pattern; introducing hydrogen from said amorphous silicon film into said polycrystalline silicon film, and also activating conductive impurities in said conductive silicon film by heat treatment; and patterning said metal film, said conductive silicon film, and said amorphous silicon film to form source/drain regions.
Claim 6
Independent Claim
156 words
A method of producing a thin film transistor, comprising the steps of: providing a substrate having insulating properties and providing a gate on a surface of the substrate; forming an insulating film over the substrate and gate, and then forming a polycrystalline silicon film on an upper surface of said insulating film; depositing a silicon oxide film on said polycrystalline silicon film, and then patterning said silicon oxide film to form a silicon oxide film pattern on said polycrystalline silicon film above said gate; successively forming a hydrogen-containing amorphous silicon film, a conductive silicon film, and a metal film on said polycrystalline silicon film so as to cover said silicon oxide film pattern; introducing hydrogen from said amorphous silicon film into said polycrystalline silicon film, and also activating conductive impurities in said conductive silicon film by heat treatment; and patterning said metal film, said conductive silicon film, and said amorphous silicon film to form source/drain regions.
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