US5728592A
Expired / Lapsed
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Method for fabricating a thin film transistor matrix device
Assignee: Sharp Corp
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Filing: 1995-07-06
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Granted: 1998-03-17
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Expires: 2015-07-06
Abstract
Abstract A thin film transistor matrix device is fabricated by forming a transparent conductor film and a metal film on an insulating substrate in this order. The metal film and the transparent conductor film are together patterned to form picture element electrodes, and drain bus lines or gate bus lines. Source electrodes and drain electrodes may also be formed from the transparent conductor film and metal film. A semiconductor layer, an insulating film and a conductor film may be formed on the entire surface in this order. In this case, the conductor film, the insulator film and the semiconductor layer are patterned to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and gate electrodes and gate bus lines from the conductor film. By patterning the conductor film, the insulating film and the semiconductor layer, the metal film of the picture element electrodes and drain bus lines is exposed. Alternatively, the metal film may be patterned with the semiconductor layer, insulating film and conductor film to expose the transparent conductor film. A current is applied to the drain bus lines or gate bus lines in an electrolyte solution to selectively form a film on the drain bus lines or gate bus lines. The film may be a protecting film serving as a mask to allow the metal film on the picture element electrodes to be etched.
Inventors
- 👤 Ken-ichi Oki
- 👤 Ken-ichi Yanai
- 👤 Tamotsu Wada
- 👤 Koji Ohgata
- 👤 Yutaka Takizawa
- 👤 Masahiro Okabe
- 👤 Tsutomu Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:06
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136286; G02F1/1368; H; H10; H10D; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G02F1/136295; H10D30/00; H10D30/60; H10D30/67; H10D30/6729
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
125 words
A method for fabricating a thin film transistor matrix device comprising the steps of: forming a transparent conductor film and a metal film on an insulating substrate in the stated order; together patterning the metal film and the transparent conductor film into a configuration which contains at least the picture element electrodes, and drain bus lines or gate bus lines; applying a current to the drain bus or the gate bus lines in an electrolyte solution to selectively form a protecting film on the drain bus lines or the gate bus lines and on patterns electrically connected to the drain bus lines or the gate bus lines; and etching off the metal film on the picture element electrodes with the protecting film as a mask.
Claim 2
Independent Claim
125 words
A method for fabricating a thin film transistor matrix device comprising the steps of: forming a transparent conductor film and a metal film on an insulating substrate in the stated order; together patterning the metal film and the transparent conductor film into a configuration which contains at least the picture element electrodes, and drain bus lines or gate bus lines; applying a current to the drain bus or the gate bus lines in an electrolyte solution to selectively form a protecting film on the drain bus lines or the gate bus lines and on patterns electrically connected to the drain bus lines or the gate bus lines; and etching off the metal film on the picture element electrodes with the protecting film as a mask.
Claim 3
Independent Claim
222 words
A method for fabricating a thin film transistor matrix device comprising an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate; a plurality of thin film transistors having source electrodes connected to the respective picture element electrodes; drain bus lines provided between the picture element electrodes in a first direction, and commonly connected to drain electrodes of the respective thin film transistors; gate bus lines intersecting the drain bus lines between the picture element electrodes in a second direction which normally intersects the first direction, and commonly connected to gate electrodes of the thin film transistors, the method comprising steps of: forming a transparent conductor film and a metal film on the insulating substrate in the stated order, and together patterning the metal film and the transparent conductor film into a configuration which contains at least the picture element electrodes, and the drain bus lines or the gate bus lines; applying a current to the drain bus or the gate bus lines in an electrolyte solution to selectively form a protecting film on the drain bus lines or the gate bus lines and on patterns electrically connected to the drain bus lines or the gate bus lines; and etching off the metal film on the picture element electrodes with the protecting film as a mask.
Claim 4
Independent Claim
222 words
A method for fabricating a thin film transistor matrix device comprising an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate; a plurality of thin film transistors having source electrodes connected to the respective picture element electrodes; drain bus lines provided between the picture element electrodes in a first direction, and commonly connected to drain electrodes of the respective thin film transistors; gate bus lines intersecting the drain bus lines between the picture element electrodes in a second direction which normally intersects the first direction, and commonly connected to gate electrodes of the thin film transistors, the method comprising steps of: forming a transparent conductor film and a metal film on the insulating substrate in the stated order, and together patterning the metal film and the transparent conductor film into a configuration which contains at least the picture element electrodes, and the drain bus lines or the gate bus lines; applying a current to the drain bus or the gate bus lines in an electrolyte solution to selectively form a protecting film on the drain bus lines or the gate bus lines and on patterns electrically connected to the drain bus lines or the gate bus lines; and etching off the metal film on the picture element electrodes with the protecting film as a mask.
Claim 5
Dependent Claim
40 words
A method for fabricating a thin film transistor matrix device according to claim 2, wherein the step of forming the protecting film is a step of forming an electrodeposited resin film as the protecting film by using an electrodeposition process.
Claim 6
Dependent Claim
41 words
A method for fabricating a thin film transistor matrix device according to claim 2, wherein the step of forming the protecting film is a step of forming an anodic oxidation film as the protecting film by using an anodic oxidation process.
Claim 7
Dependent Claim
39 words
A method for fabricating a thin film transistor matrix device according to claim 2, wherein the step of forming the protecting film is a step of forming a metal film as the protecting film by using an electrodeposition process.
Claim 8
Dependent Claim
35 words
A method for fabricating a thin film transistor matrix device according to claim 2, wherein the step of forming the protecting film is a step of forming an electrodeposited resist by using an electrodeposition process.
Claim 9
Dependent Claim
138 words
A method for fabricating a thin film transistor matrix device according to claim 6, wherein the drain bus lines or gate bus lines have bus line terminals; the step of forming the protecting film includes the substeps of: after the electrodeposited resist is electrodeposited, shielding the bus line terminals of the drain bus lines or the gate bus lines from ultraviolet rays, irradiating the electrodeposited resist with ultraviolet rays with the bus line terminals shielded to harden the electrodeposited resist, and after irradiating the electrodeposited resist, removing the electrodeposited resist from the bus line terminals; and when the metal film on the picture element electrodes is etched off with the electrodeposited resist as a mask, the metal film on the bus line terminals is also etched off to expose the transparent conductor film of the bus line terminals.
Claim 10
Dependent Claim
30 words
A method for fabricating a thin film transistor matrix device according to claim 6, wherein when the electrodeposited resist is electrodeposited, an electrodeposition voltage is set to about 3-50 V.
Claim 11
Dependent Claim
33 words
A method for fabricating a thin film transistor matrix device according to claim 6, wherein when the electrodeposited resist is electrodeposited, a temperature of the electrodeposited resist is set to about 5°-20° C.
Claim 12
Dependent Claim
36 words
A method for fabricating a thin film transistor matrix device according to claim 6, wherein after the electrodeposited resist is electrodeposited, the electrodeposited resist is dried in an atmosphere having a temperature of about 40°-75° C.
Claim 13
Independent Claim
221 words
A method for fabricating a thin film transistor matrix device comprising the steps of: forming a transparent conductor film and a metal film on an insulating substrate in the stated order; together patterning the metal film and the transparent conductor film in a set configuration to form picture element electrodes, source electrodes, drain electrodes and drain bus lines from the transparent conductor film such that the picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines have upper surfaces covered by the metal film; forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order; patterning the conductor film, the insulating film and the semiconductor layer in a set configuration to form an active layer from the semiconductor layer, gate insulating films from the film, and the gate electrodes and the gate bus lines from the conductor film, while exposing the metal film on the picture element electrodes and the drain bus lines; applying a current to the drain bus lines in an electrolyte solution to selectively form a protecting film on the metal film of the drain bus lines; and etching off the metal film on the picture element electrodes with the protecting film as a mask to expose the transparent conductor film of the picture element electrodes.
Claim 14
Independent Claim
221 words
A method for fabricating a thin film transistor matrix device comprising the steps of: forming a transparent conductor film and a metal film on an insulating substrate in the stated order; together patterning the metal film and the transparent conductor film in a set configuration to form picture element electrodes, source electrodes, drain electrodes and drain bus lines from the transparent conductor film such that the picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines have upper surfaces covered by the metal film; forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order; patterning the conductor film, the insulating film and the semiconductor layer in a set configuration to form an active layer from the semiconductor layer, gate insulating films from the film, and the gate electrodes and the gate bus lines from the conductor film, while exposing the metal film on the picture element electrodes and the drain bus lines; applying a current to the drain bus lines in an electrolyte solution to selectively form a protecting film on the metal film of the drain bus lines; and etching off the metal film on the picture element electrodes with the protecting film as a mask to expose the transparent conductor film of the picture element electrodes.
Claim 15
Independent Claim
322 words
A method for fabricating a thin film transistor matrix device comprising an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate; a plurality of thin film transistors having source electrodes connected to the respective picture element electrodes; drain bus lines provided between the picture element electrodes in a first direction, and commonly connected to drain electrodes of the respective thin film transistors; gate bus lines intersecting the drain bus lines between the picture element electrodes in a second direction which normally intersects the first direction, and commonly connected to gate electrodes of the thin film transistors, the method comprising: a first step of forming a transparent conductor film and a metal film on the insulating substrate in the stated order, and together patterning the metal film and the transparent conductor film in a set configuration to form the picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines which are formed of the transparent conductor film and have the metal film on upper surfaces thereof; a second step of forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order, patterning the conductor film, the insulating film and the semiconductor layer in a set configuration to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and the gate electrodes and the gate bus lines from the conductor film, while exposing the metal film on the picture element electrodes and the drain bus lines; a third step of applying a current to the drain bus lines in an electrolyte solution to selectively form a protecting film on the metal film of the drain bus lines; and a fourth step of etching off the metal film on the picture element electrodes with the protecting film as a mask to expose the transparent conductor film of the picture element electrodes.
Claim 16
Independent Claim
322 words
A method for fabricating a thin film transistor matrix device comprising an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate; a plurality of thin film transistors having source electrodes connected to the respective picture element electrodes; drain bus lines provided between the picture element electrodes in a first direction, and commonly connected to drain electrodes of the respective thin film transistors; gate bus lines intersecting the drain bus lines between the picture element electrodes in a second direction which normally intersects the first direction, and commonly connected to gate electrodes of the thin film transistors, the method comprising: a first step of forming a transparent conductor film and a metal film on the insulating substrate in the stated order, and together patterning the metal film and the transparent conductor film in a set configuration to form the picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines which are formed of the transparent conductor film and have the metal film on upper surfaces thereof; a second step of forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order, patterning the conductor film, the insulating film and the semiconductor layer in a set configuration to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and the gate electrodes and the gate bus lines from the conductor film, while exposing the metal film on the picture element electrodes and the drain bus lines; a third step of applying a current to the drain bus lines in an electrolyte solution to selectively form a protecting film on the metal film of the drain bus lines; and a fourth step of etching off the metal film on the picture element electrodes with the protecting film as a mask to expose the transparent conductor film of the picture element electrodes.
Claim 17
Dependent Claim
40 words
A method for fabricating a thin film transistor matrix device according to claim 12, wherein the step of forming the protecting film is a step of forming an electrodeposited resin film as the protecting film by using an electrodeposition process.
Claim 18
Dependent Claim
41 words
A method for fabricating a thin film transistor matrix device according to claim 12, wherein the step of forming the protecting film is a step of forming an anodic oxidation film as the protecting film by using an anodic oxidation process.
Claim 19
Dependent Claim
39 words
A method for fabricating a thin film transistor matrix device according to claim 12, wherein the step of forming the protecting film is a step of forming a metal film as the protecting film by using an electrodeposition process.
Claim 20
Dependent Claim
35 words
A method for fabricating a thin film transistor matrix device according to claim 12, wherein the step of forming the protecting film is a step of forming an electrodeposited resist by using an electrodeposition process.
Claim 21
Dependent Claim
61 words
A method for fabricating a thin film transistor matrix device according to claim 12, wherein the third step is for applying a current to the drain bus lines and the gate bus lines in the electrolyte solution to selectively form protecting films on the metal film on the drain bus lines, and on the conductor film of the gate bus lines.
Claim 22
Dependent Claim
40 words
A method for fabricating a thin film transistor matrix device according to claim 17, wherein the step of forming the protecting film is a step of forming an electrodeposited resin film as the protecting film by using an electrodeposition process.
Claim 23
Dependent Claim
41 words
A method for fabricating a thin film transistor matrix device according to claim 17, wherein the step of forming the protecting film is a step of forming an anodic oxidation film as the protecting film by using an anodic oxidation process.
Claim 24
Dependent Claim
39 words
A method for fabricating a thin film transistor matrix device according to claim 17, wherein the step of forming the protecting film is a step of forming a metal film as the protecting film by using an electrodeposition process.
Claim 25
Dependent Claim
35 words
A method for fabricating a thin film transistor matrix device according to claim 17, wherein the step of forming the protecting film is a step of forming an electrodeposited resist by using an electrodeposition process.
Claim 26
Independent Claim
205 words
A method for fabricating a thin film transistor matrix device comprising the steps of: forming a transparent conductor film and a first metal film on an insulating substrate in the stated order; patterning the first metal film and the transparent conductor film in a set configuration to form picture element electrodes, source electrodes, drain electrodes and drain bus lines from the transparent conductor film such that picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines have upper surfaces with the first metal film formed thereon; forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order; patterning the conductor film, the insulating film, the semiconductor layer and the first metal film in a set configuration to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and gate electrodes and gate bus lines from the conductor film, while exposing the transparent conductor film of the picture element electrodes and of the drain bus lines; and applying a current to the drain bus lines in an electrolyte solution to selectively form a second metal film on a surface of the transparent conductor film of the drain bus lines.
Claim 27
Independent Claim
205 words
A method for fabricating a thin film transistor matrix device comprising the steps of: forming a transparent conductor film and a first metal film on an insulating substrate in the stated order; patterning the first metal film and the transparent conductor film in a set configuration to form picture element electrodes, source electrodes, drain electrodes and drain bus lines from the transparent conductor film such that picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines have upper surfaces with the first metal film formed thereon; forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order; patterning the conductor film, the insulating film, the semiconductor layer and the first metal film in a set configuration to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and gate electrodes and gate bus lines from the conductor film, while exposing the transparent conductor film of the picture element electrodes and of the drain bus lines; and applying a current to the drain bus lines in an electrolyte solution to selectively form a second metal film on a surface of the transparent conductor film of the drain bus lines.
Claim 28
Independent Claim
305 words
A method for fabricating a thin film transistor matrix device comprising an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate; a plurality of thin film transistors having source electrodes connected to the respective picture element electrodes; drain bus lines provided between the picture element electrodes in a first direction, and commonly connected to drain electrodes of the respective thin film transistors; gate bus lines intersecting the drain bus lines between the picture element electrodes in a second direction which normally intersects the first direction, and commonly connected to gate electrodes of the respective thin film transistors, the method comprising: a first step of forming a transparent conductor film and a first metal film on the insulating substrate in the stated order, and patterning the first metal film and the transparent conductor film in a set configuration to form the picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines which are formed of the transparent conductor film and have the first metal film on upper surfaces thereof; a second step of forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order and patterning the conductor film, the insulating film, the semiconductor layer and the first metal film in a set configuration to form an active layer from the semiconductor layer, gate insulating rims from the insulating film, and the gate electrodes and the gate bus lines from the conductor film, while exposing the transparent conductor film of the picture element electrodes and of the drain bus lines; and a third step of applying a current to the drain bus lines in an electrolyte solution to selectively form a second metal film on a surface of the transparent conductor film of the drain bus lines.
Claim 29
Independent Claim
305 words
A method for fabricating a thin film transistor matrix device comprising an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate; a plurality of thin film transistors having source electrodes connected to the respective picture element electrodes; drain bus lines provided between the picture element electrodes in a first direction, and commonly connected to drain electrodes of the respective thin film transistors; gate bus lines intersecting the drain bus lines between the picture element electrodes in a second direction which normally intersects the first direction, and commonly connected to gate electrodes of the respective thin film transistors, the method comprising: a first step of forming a transparent conductor film and a first metal film on the insulating substrate in the stated order, and patterning the first metal film and the transparent conductor film in a set configuration to form the picture element electrodes, the source electrodes, the drain electrodes and the drain bus lines which are formed of the transparent conductor film and have the first metal film on upper surfaces thereof; a second step of forming a semiconductor layer, an insulating film and a conductor film on the entire surface in the stated order and patterning the conductor film, the insulating film, the semiconductor layer and the first metal film in a set configuration to form an active layer from the semiconductor layer, gate insulating rims from the insulating film, and the gate electrodes and the gate bus lines from the conductor film, while exposing the transparent conductor film of the picture element electrodes and of the drain bus lines; and a third step of applying a current to the drain bus lines in an electrolyte solution to selectively form a second metal film on a surface of the transparent conductor film of the drain bus lines.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-16 | 2001-09-15 | 2002-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-16 | 2005-09-15 | 2006-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-16 | 2009-09-15 | 2010-03-17 | $7700.00 | Window Closed / Lapsed |