thin film transistor

Abstract

Abstract PURPOSE:To lower the wiring resistance of a gate electrode while improving yield, and to enlarge a picture plane and increase density by forming the gate electrode constituting a thin-film transistor in two layer structure of a transference electrode and a metallic film. CONSTITUTION:A thin-film transistor is composed of a gate electrode 11 consisting of two layers of a transference electrode (ITO or SnO2) film 2 and a metallic film 3, a gate insulating film 4 shaped onto the gate electrode 11, a semiconductor layer 5 formed onto the gate insulating film 4, and source 8 and drain electrodes 7 composed of metallic films shaped onto the semiconductor layer from the substrate 1 side. Accordingly, the transference electrode 2 organizing the gate electrode 11 is used for an electrode for a display section, and the transference electrode 2 and the metallic film 3 are utilized for the gate electrode 11, thus simplifying processes while decreasing defects due to disconnection because of the gate electrode made up of two layer films, then preventing the incidence of beams to the semiconductor film 5 by the metallic film 3.

Inventors

• 👤 Kanetaka Sekiguchi
• 👤 金孝 関口

Bibliographic Details