Method of manufacturing semiconductor device

Claim 1

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises aluminum; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said layer along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said plasma is produced by a member selected from the group consisting of (i) application of an alternating current and a magnetic field, (ii) application of microwaves, (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; and wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V.

Claim 2

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises aluminum; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said layer along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said plasma is produced by a member selected from the group consisting of (i) application of an alternating current and a magnetic field, (ii) application of microwaves, (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; and wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V.

Claim 12

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises silicon; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etchings of said layer along said carbon film pattern, with a plasma of a gas comprising a halogen or a halogen bearing compound; wherein said plasma is produced by a member selected from the group consisting of: (i) application of an alternating current and a magnetic field, (ii) application of microwaves (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V.

Claim 13

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises silicon; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etchings of said layer along said carbon film pattern, with a plasma of a gas comprising a halogen or a halogen bearing compound; wherein said plasma is produced by a member selected from the group consisting of: (i) application of an alternating current and a magnetic field, (ii) application of microwaves (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V.

Claim 20

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises aluminum; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said layer along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V.

Claim 21

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises aluminum; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said layer along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V.

Claim 23

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a substrate; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said substrate along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said plasma is produced by a member selected from the group consisting of (i) application of an alternating current and a magnetic field (ii) application of microwaves, (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; and wherein either: (a) a surface of said substrate comprises aluminum, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V; or (b) a surface of said substrate comprises silicon, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V.

Claim 24

A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a substrate; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said substrate along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said plasma is produced by a member selected from the group consisting of (i) application of an alternating current and a magnetic field (ii) application of microwaves, (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; and wherein either: (a) a surface of said substrate comprises aluminum, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V; or (b) a surface of said substrate comprises silicon, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V.