US5705443A — Etching method for refractory materials

Claim 1

Independent Claim 112 words

A plasma-assisted dry etching process for etching of a metal-containing material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein (1) the etching plasma is intermittently physically blocked during the contacting of the etch enhancing reactant with the metal-containing material or (2) the etching plasma is a pulsed etching plasma that is pulsed so that it is off when the etch enhancing reactant is contacted with the metal-containing material.

Claim 2

Dependent Claim 112 words

A plasma-assisted dry etching process for etching of a metal-containing material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein (1) the etching plasma is intermittently physically blocked during the contacting of the etch enhancing reactant with the metal-containing material or (2) the etching plasma is a pulsed etching plasma that is pulsed so that it is off when the etch enhancing reactant is contacted with the metal-containing material.

Claim 3

Dependent Claim 24 words

A method according to claim 1, where the plasma is intermittently physically blocked from exposure to said substrate during said etch enhancing reactant contacting.

Claim 4

Dependent Claim 56 words

A method according to claim 1, wherein the contacting of the metal-containing material with the etch enhancing reactant comprises directing the etch enhancing reactant at the metal-containing material in proximity thereto so that plasma employed in the plasma etching is substantially non-interfering with respect to the reaction between the etch enhancing reactant and the metal-containing material.

Claim 5

Dependent Claim 18 words

A method according to claim 1, wherein the plasma etching comprises pulsed plasma etching of the metal-containing material.

Claim 6

Dependent Claim 44 words

A method according to claim 1, wherein the metal-containing material comprises a metal oxide film coated on the substrate, and the plasma etching comprises exposing the metal-containing material to a plasma which is reducingly effective for the metal oxide film coated on the substrate.

Claim 7

Dependent Claim 28 words

A process according to claim 5, wherein the reducing plasma comprises a reducing gas species selected from the group consisting of ammonia, amines, imines, hydrogen, and C1-C4 hydrocarbons.

Claim 8

Dependent Claim 15 words

A process according to claim 5, wherein the reducing plasma is devoid of halogen constituents.

Claim 9

Dependent Claim 65 words

A method according to claim 1, wherein the etch enhancing reactant and the metal-containing material are reacted to form a reaction product on the substrate including metal complexed ligand which is volatilizable upon exposure to the plasma; and the metal complexed ligand on the substrate is exposed to the plasma, to volatilize the metal complexed ligand and thereby remove the metal-containing material from the substrate.

Claim 10

Dependent Claim 32 words

A process according to claim 1, wherein the substrate is masked prior to initiation of steps (i) and (ii), to thereby effect removal of the metal-containing material from selected area portions thereof.

Claim 11

Dependent Claim 63 words

A process according to claim 1, wherein the metal-containing material comprises a metal or an oxide of a metal selected from metals of the group consisting of: Cu, Ba, Sr, La, Nd, Nb, Ce, Pr, Sm, Eu, Th, Gd, Ta, Tb, Ti, Zr, Pt, Pd, Au, Ag, Ir, Pt, Ru, Re, Rh, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y and Pb.

Claim 12

Dependent Claim 27 words

A process according to claim 1, wherein the metal-containing material comprises a metal oxide, and the plasma comprises an inert gas species, and a reducing gas species.

Claim 13

Dependent Claim 27 words

A process according to claim 11, wherein the inert gas species comprises a gaseous species selected from the group consisting of helium, argon, neon, xenon, and krypton.

Claim 14

Dependent Claim 34 words

A process according to claim 1, wherein the etch enhancing reactant comprises a monodentate or multidentate organic ligand which is coordinatable to the metal of the metal-containing material to yield a metal complexed ligand.

Claim 15

Dependent Claim 30 words

A process according to claim 13, wherein the ligand species comprises at least one member selected from the group consisting of β-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.

Claim 16

Dependent Claim 24 words

A process according to claim 13, wherein the ligand species comprises at least one member selected from the group consisting of β-diketonates and cyclopentadienyls.

Claim 17

Dependent Claim 13 words

A process according to claim 13, wherein the ligand species comprises a β-diketonate.

Claim 18

Dependent Claim 65 words

A process according to claim 13, wherein the ligand species comprises at least one member selected from the group consisting of the group consisting of: (i) 2,2,6,6-tetramethyl-3,5-heptanedionate; (ii) 1,1,15,5,5-hexafluoro-2,4,-pentanedionate; (iii) 1,1,1,2,2,3,3-heptafluoro-7,7-dimethyl-4,6-octanedionate; (iv) 4,4'-(ethane-1,2-diyldiimino)bis(3-pentene-2-one); (v) cyclopentadienyls; (vi) 2,4-pentanedionate; (vii) 1,1,1-trifluoro-2,4-pentanedionate; and (viii) ligands coordinatable with a metal selected from the group consisting of palladium, iridium, platinum, and rhenium, to form a volatile compound of said metal.

Claim 19

Dependent Claim 46 words

A process according to claim 1, wherein: said metal-containing material comprises a metal oxide composition selected from the group consisting of BST, SBT and PZT; said etch enhancing species is selected from the group consisting of hexamethyldisilazane, hexafluoroacetylacetonate, and tetraheptanedionate; and said plasma comprises NH radicals.

Claim 20

Dependent Claim 107 words

A plasma-assisted dry etching process for etching of a metal-coating material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein the steps of plasma etching (i) and etch enhancing reactant contacting (ii) are carried out sequentially and repetitively to substantially completely remove the metal-containing material from the substrate, with the plasma etching being stopped during the etch enhancing reactant contacting with the metal-containing material.

Claim 21

Dependent Claim 107 words

A plasma-assisted dry etching process for etching of a metal-coating material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein the steps of plasma etching (i) and etch enhancing reactant contacting (ii) are carried out sequentially and repetitively to substantially completely remove the metal-containing material from the substrate, with the plasma etching being stopped during the etch enhancing reactant contacting with the metal-containing material.

Claim 22

Dependent Claim 139 words

A plasma-assisted dry etching process for etching of a metal-containing material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein the metal-containing material comprises a metal oxide whose metal moiety is selected from metals of the group consisting of: barium, strontium, lead, zirconium, and titanium, and wherein (1) the etching plasma is intermittently physically blocked during the contacting of the etch enhancing reactant with the metal-containing material or (2) the etching plasma is a pulsed etching plasma that is pulsed so that it is off when the etch enhancing reactant is contacted with the metal-containing material.

Claim 23

Dependent Claim 139 words

A plasma-assisted dry etching process for etching of a metal-containing material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein the metal-containing material comprises a metal oxide whose metal moiety is selected from metals of the group consisting of: barium, strontium, lead, zirconium, and titanium, and wherein (1) the etching plasma is intermittently physically blocked during the contacting of the etch enhancing reactant with the metal-containing material or (2) the etching plasma is a pulsed etching plasma that is pulsed so that it is off when the etch enhancing reactant is contacted with the metal-containing material.

Claim 24

Dependent Claim 119 words

A plasma-assisted dry etching process for etching of a metal-containing material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein the plasma is pulsed and/or blocked to carry out steps (i) and (ii) in said process, said blocked plasma being intermittently physically blocked while the metal-containing material is contacted with the etch enhancing reagent, and said pulsed plasma being pulsed so that it is off when the etch enhancing reactant is contacted with the metal-containing material.

Claim 25

Dependent Claim 119 words

A plasma-assisted dry etching process for etching of a metal-containing material layer on a substrate to remove the metal-containing material from the substrate, comprising (i) plasma etching the metal-containing material and (ii) contacting the metal-containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal-containing material from the substrate, wherein the plasma is pulsed and/or blocked to carry out steps (i) and (ii) in said process, said blocked plasma being intermittently physically blocked while the metal-containing material is contacted with the etch enhancing reagent, and said pulsed plasma being pulsed so that it is off when the etch enhancing reactant is contacted with the metal-containing material.

Claim 26

Dependent Claim 61 words

A process according to claim 21, wherein said plasma is pulsed and/or blocked via a technique including at least one step of: intermittent blocking of the plasma; modulation of power to a device for generating said plasma; modulation of the flow rate of said plasma; modulation of the pressure of said plasma; and modulation of the bias potential of said substrate.

Claim 27

Dependent Claim 150 words

A plasma-assisted dry etching process for etching of a metal oxide film coated on a substrate to remove the metal oxide film from the substrate, comprising: (a) exposing the metal oxide film-coated substrate to a plasma which is reducingly effective for the metal oxide film coated on the substrate, to yield a reduced metal containing film on the substrate; (b) discontinuing the exposure of the metal oxide film-coated substrate to the reducingly effective plasma after a predetermined period of exposure; (c) during such discontinuance of step (b), contacting the reduced metal film with a ligand species which is reactive with the reduced metal to form a reaction product on the substrate comprising metal complexed ligand which is volatilized upon exposure to the plasma; and (d) exposing the metal complexed ligand on the substrate to the plasma, to volatilize the metal complexed ligand and thereby remove the metal from the substrate.

Claim 28

Dependent Claim 150 words

A plasma-assisted dry etching process for etching of a metal oxide film coated on a substrate to remove the metal oxide film from the substrate, comprising: (a) exposing the metal oxide film-coated substrate to a plasma which is reducingly effective for the metal oxide film coated on the substrate, to yield a reduced metal containing film on the substrate; (b) discontinuing the exposure of the metal oxide film-coated substrate to the reducingly effective plasma after a predetermined period of exposure; (c) during such discontinuance of step (b), contacting the reduced metal film with a ligand species which is reactive with the reduced metal to form a reaction product on the substrate comprising metal complexed ligand which is volatilized upon exposure to the plasma; and (d) exposing the metal complexed ligand on the substrate to the plasma, to volatilize the metal complexed ligand and thereby remove the metal from the substrate.

Claim 29

Dependent Claim 27 words

A process according to claim 23, wherein the steps (a)-(d) are carried out sequentially and repetitively, to substantially completely remove the metal oxide film from the substrate.

Claim 30

Dependent Claim 31 words

A process according to claim 23, wherein the substrate is masked prior to initiation of steps (a)-(d), to thereby effect removal of the metal oxide film from selected area portions thereof.

Claim 31

Dependent Claim 159 words

A plasma-assisted dry etching process for etching of a BST metal oxide film coated on a substrate to remove the BST metal oxide film from the substrate, comprising: (a) exposing the BST metal oxide film-coated substrate to a plasma comprising NH radicals which is reducingly effective for the BST metal oxide film coated on the substrate, to yield a reduced BST metal film on the substrate; (b) discontinuing the exposure of the BST metal oxide film-coated substrate to the reducingly effective plasma after a predetermined period of exposure; (c) during such discontinuance of step (b), contacting the reduced BST metal film with a ligand species which is reactive with the reduced metal to form a reaction product on the substrate comprising metal complexed ligand which is volatilized upon exposure to the plasma; and (d) exposing the metal complexed ligand on the substrate to the plasma, to volatilize the metal complexed ligand and thereby remove the metal from the substrate.

Claim 32

Dependent Claim 159 words

A plasma-assisted dry etching process for etching of a BST metal oxide film coated on a substrate to remove the BST metal oxide film from the substrate, comprising: (a) exposing the BST metal oxide film-coated substrate to a plasma comprising NH radicals which is reducingly effective for the BST metal oxide film coated on the substrate, to yield a reduced BST metal film on the substrate; (b) discontinuing the exposure of the BST metal oxide film-coated substrate to the reducingly effective plasma after a predetermined period of exposure; (c) during such discontinuance of step (b), contacting the reduced BST metal film with a ligand species which is reactive with the reduced metal to form a reaction product on the substrate comprising metal complexed ligand which is volatilized upon exposure to the plasma; and (d) exposing the metal complexed ligand on the substrate to the plasma, to volatilize the metal complexed ligand and thereby remove the metal from the substrate.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2001-01-05	2001-07-07	2002-01-06	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2005-01-05	2005-07-07	2006-01-06	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2009-01-05	2009-07-07	2010-01-06	$7700.00	Window Closed / Lapsed

Etching method for refractory materials

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