US5387315A
Expired / Lapsed
US
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Process for deposition and etching of copper in multi-layer structures
Assignee: Micron Technology Inc
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Filing: 1992-10-27
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Granted: 1995-02-07
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Expires: 2012-10-27
Abstract
Abstract An integral process is provided for depositing onto, and etching a layer of copper from, a multi-layer structure. The subject process, which is conducted within a vacuum chamber, comprises providing a multi-layer having at least one major surface in which contact/vias are located. Next, a copper precursor is deposited onto at least one major surface of the multi-layer structure and into the contact/vias. The substrate temperature of the multi-layer structure in the vacuum chamber is maintained above the decomposition temperature of the copper precursor during the deposition thereof. In the etching phase of the integral process, an protective etch mask is provided on the major surface. Then, the substrate temperature of the multi-layer structure is lowered in the vacuum chamber below the decomposition temperature of the deposited copper precursor. Etching of the deposited copper film is then conducted employing an etchant material comprising the decomposition product of the copper precursor. Preferably, etching of the deposited copper film from at least one of the major surfaces of the multi-layer structure comprises a reverse chemical vapor deposition and etching process.
Inventors
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; Y; Y10; Y10S; Y10S438/00; Y10S438/913
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
193 words
An integral process for depositing copper onto and etching copper from a multi-layer structure having at least one major surface, comprising: placing the multi-layer structure in a vacuum chamber; introducing a copper precursor of XCuY 2 into the vacuum chamber wherein X is a halogen and wherein Y is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 3 ) 2 ) 3 and P(C 4 H 9 ) 3 ; depositing onto the at least one major surface of the multi-layer structure a film comprising copper from the copper precursor, a temperature of the multi-layer structure in the vacuum chamber being maintained above a decomposition temperature of the copper precursor during the step of depositing; introducing a decomposition product of the copper precursor, 2Y, into the vacuum chamber; lowering the temperature of the multi-layer structure in the vacuum chamber below the decomposition temperature of the copper precursor; etching at least a portion of the deposited film on the at least one major surface of the multi-layer structure with an etchant material comprising the decomposition product.
Claim 2
Dependent Claim
193 words
An integral process for depositing copper onto and etching copper from a multi-layer structure having at least one major surface, comprising: placing the multi-layer structure in a vacuum chamber; introducing a copper precursor of XCuY 2 into the vacuum chamber wherein X is a halogen and wherein Y is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 3 ) 2 ) 3 and P(C 4 H 9 ) 3 ; depositing onto the at least one major surface of the multi-layer structure a film comprising copper from the copper precursor, a temperature of the multi-layer structure in the vacuum chamber being maintained above a decomposition temperature of the copper precursor during the step of depositing; introducing a decomposition product of the copper precursor, 2Y, into the vacuum chamber; lowering the temperature of the multi-layer structure in the vacuum chamber below the decomposition temperature of the copper precursor; etching at least a portion of the deposited film on the at least one major surface of the multi-layer structure with an etchant material comprising the decomposition product.
Claim 3
Dependent Claim
19 words
The process of claim 1, wherein the etching of the film is conducted in situ in said vacuum chamber.
Claim 4
Dependent Claim
64 words
The process of claim 1, further comprising the steps of: prior to the deposition of the film comprising copper, depositing a dielectric layer to overlie the multi-layer structure; etching at least a portion of said dielectric layer to expose a contact area of the at least one major surface of the multi-layer structure, such that the deposited film comprising copper contacts the contact area.
Claim 5
Dependent Claim
74 words
The process of claim 1, further comprising the steps of: prior to the deposition of the film comprising copper, depositing a dielectric layer to overlie the multi-layer structure; etching at least a portion of the dielectric layer and at least a portion of the at least one major surface thereby forming a vias in the at least one major surface of the multi-layer structure; and filling the vias with the deposited film comprising copper.
Claim 6
Dependent Claim
227 words
An integral process for producing a multi-layer structure having at least one major surface by depositing copper onto the etching copper from the multi-layer structure, comprising: depositing a dielectric layer to overlie structure; etching at least a portion of said dielectric layer to expose a contact area of the at least one major multi-layer structure; placing the multi-layer structure in a vacuum chamber; depositing in-situ onto the contact area of the at least one major surface of the multi-layer structure a film comprising copper from a copper precursor of XCuY 2 , wherein X is a halogen and wherein Y is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 3 ) 2 ) 3 , and P(C 4 H 9 ) 3 , when a temperature of the multi-layer structure in the vacuum chamber is maintained above a decomposition temperature of the copper precursor; introducing a decomposition product of the copper precursor, 2Y, into the vacuum chamber; lowering the temperature of the multi-layer structure in the vacuum chamber below the decomposition temperature of the copper precursor; and etching at least a portion of the deposited film from the at least one major surface of the multi-layer structure with an etchant material comprising the decomposition product of the copper precursor.
Claim 7
Dependent Claim
227 words
An integral process for producing a multi-layer structure having at least one major surface by depositing copper onto the etching copper from the multi-layer structure, comprising: depositing a dielectric layer to overlie structure; etching at least a portion of said dielectric layer to expose a contact area of the at least one major multi-layer structure; placing the multi-layer structure in a vacuum chamber; depositing in-situ onto the contact area of the at least one major surface of the multi-layer structure a film comprising copper from a copper precursor of XCuY 2 , wherein X is a halogen and wherein Y is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 3 ) 2 ) 3 , and P(C 4 H 9 ) 3 , when a temperature of the multi-layer structure in the vacuum chamber is maintained above a decomposition temperature of the copper precursor; introducing a decomposition product of the copper precursor, 2Y, into the vacuum chamber; lowering the temperature of the multi-layer structure in the vacuum chamber below the decomposition temperature of the copper precursor; and etching at least a portion of the deposited film from the at least one major surface of the multi-layer structure with an etchant material comprising the decomposition product of the copper precursor.
Claim 8
Dependent Claim
247 words
An integral process for depositing copper onto and etching copper from a multi-layer structure having at least one major surface, comprising: placing the multi-layer structure in a vacuum chamber; introducing a first copper precursor of XCuY 2 into the vacuum chamber, wherein X is a halogen and wherein Y is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 3 ) 2 ) 3 , and P(C 4 H 9 ) 3 ; depositing onto the at least one major surface of the multi-layer structure a film comprising copper from the first copper precursor when a temperature of the multi-layer structure in the vacuum chamber is maintained above a decomposition temperature of the first copper precursor; introducing an etchant material of 2Y' into the vacuum chamber, wherein Y' is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 2 ) 2 ) 3 , and P(C 4 )H 9 ) 3 ; adjusting the temperature of the multi-layer structure in the vacuum chamber to a value below a decomposition temperature of a second copper precursor of X'CuY' 2 , wherein X' is a halogen; and etching the deposited film from the at least one major surface of the multi-layer structure with said etchant material; and creating the second copper precursor during said etching.
Claim 9
Dependent Claim
247 words
An integral process for depositing copper onto and etching copper from a multi-layer structure having at least one major surface, comprising: placing the multi-layer structure in a vacuum chamber; introducing a first copper precursor of XCuY 2 into the vacuum chamber, wherein X is a halogen and wherein Y is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 3 ) 2 ) 3 , and P(C 4 H 9 ) 3 ; depositing onto the at least one major surface of the multi-layer structure a film comprising copper from the first copper precursor when a temperature of the multi-layer structure in the vacuum chamber is maintained above a decomposition temperature of the first copper precursor; introducing an etchant material of 2Y' into the vacuum chamber, wherein Y' is selected from a group consisting of P(CH 3 ) 3 , P(C 2 H 5 ) 3 , P(i-C 3 H 8 ) 3 , P(CH(CH 2 ) 2 ) 3 , and P(C 4 )H 9 ) 3 ; adjusting the temperature of the multi-layer structure in the vacuum chamber to a value below a decomposition temperature of a second copper precursor of X'CuY' 2 , wherein X' is a halogen; and etching the deposited film from the at least one major surface of the multi-layer structure with said etchant material; and creating the second copper precursor during said etching.
Claim 10
Dependent Claim
182 words
An integral process for depositing copper onto and etching copper from a structure, comprising the following steps: depositing at least one layer overlying a substrate; patterning said layer to define further openings in said layer; etching said layer to form a pattern for said copper, said step of etching forming said openings, said layer and said substrate forming the structure; placing the structure in a vacuum chamber; introducing a first copper precursor into the vacuum chamber; maintaining a temperature of the structure in the vacuum chamber at or above a decomposition temperature of the first copper precursor; depositing the copper to overlie said layer and to fill said openings; introducing a further precursor into the vacuum chamber; creating a reaction between the copper and said further precursor to etch the copper from a surface of said layer while retaining the copper in said openings; and forming a second copper precursor during etching of the copper from the surface of said layer, said second copper precursor having a decomposition temperature different than said decomposition temperature of the first copper precursor during the reaction.
Claim 11
Dependent Claim
182 words
An integral process for depositing copper onto and etching copper from a structure, comprising the following steps: depositing at least one layer overlying a substrate; patterning said layer to define further openings in said layer; etching said layer to form a pattern for said copper, said step of etching forming said openings, said layer and said substrate forming the structure; placing the structure in a vacuum chamber; introducing a first copper precursor into the vacuum chamber; maintaining a temperature of the structure in the vacuum chamber at or above a decomposition temperature of the first copper precursor; depositing the copper to overlie said layer and to fill said openings; introducing a further precursor into the vacuum chamber; creating a reaction between the copper and said further precursor to etch the copper from a surface of said layer while retaining the copper in said openings; and forming a second copper precursor during etching of the copper from the surface of said layer, said second copper precursor having a decomposition temperature different than said decomposition temperature of the first copper precursor during the reaction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-02-06 | 1998-08-08 | 1999-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-06 | 2002-08-08 | 2003-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-06 | 2006-08-08 | 2007-02-07 | $7700.00 | Window Closed / Lapsed |