Processes for the chemical vapor deposition of copper and etching of copper

Claim 1

In a process for the chemical vapor deposition of a copper metal film onto a substrate wherein at least a portion of the surface of said substrate is metallic or other electrically conducting material, by contacting said substrate with a volatile organometallic copper precursor in the gas phase, the improvement for selectively depositing said copper film on the metallic or other electrically conducting portion of the surface of the substrate, at a deposition temperature from 110° to 190° C. which comprises: using as said volatile organometallic copper precursor a complex having a vapor pressure greater than or equal to 0.01 mm Hg at 100° C. represented by the structural formula: ##STR5## where R 1 and R 3 are each independently C 1 -C 8 perfluoroalkyl, R 2 is H or C 1 -C 8 perfluoroalkyl and L is carbon monoxide, an isonitrile, or an unsaturated hydrocarbon ligand containing at least one non-aromatic unsaturation.