Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
54 words
A method to anisotropically etch a titanate material comprising the steps of (a) submersing a surface of said titanate material in a non-alkaline liquid ambient; and (b) illuminating portions of said surface with radiation, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.
Claim 2
Independent Claim
54 words
A method to anisotropically etch a titanate material comprising the steps of (a) submersing a surface of said titanate material in a non-alkaline liquid ambient; and (b) illuminating portions of said surface with radiation, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.
Claim 3
Dependent Claim
30 words
The method according to claim 1, wherein said illuminated portions of said surface are at a temperature substantially the same as the temperature of the unilluminated portions of said surface.
Claim 4
Dependent Claim
22 words
The method according to claim 1, wherein said liquid ambient is comprised of hydrochloric acid or hydrofluoric acid or a combination thereof.
Claim 5
Dependent Claim
16 words
The method to claim 1, wherein said radiation is produced by a mercury xenon arc lamp.
Claim 6
Dependent Claim
14 words
The method according to claim 1, wherein said titanate material is lead zirconate titanate.
Claim 7
Dependent Claim
14 words
The method according to claim 1, wherein said titanate material is barium strontium titanate.
Claim 8
Dependent Claim
20 words
The method according to claim 1, wherein the direction of propagation of said radiation is substantially orthogonal to said surface.
Claim 9
Dependent Claim
29 words
The method according to claim 1, wherein an etch mask is interposed between the source of said radiation and said surface, whereby portions of said surface are not illuminated.
Claim 10
Dependent Claim
13 words
The method according to claim 8, wherein said etch mask is silicon oxide.
Claim 11
Dependent Claim
13 words
The method according to claim 8, wherein said etch mask is silicon nitride.
Claim 12
Dependent Claim
14 words
The method according to claim 8, wherein said etch mask is a noble metal.
Claim 13
Dependent Claim
12 words
The method according to claim 11, wherein said noble metal is platinum.
Claim 14
Dependent Claim
12 words
The method according to claim 1, wherein said liquid ambient is acidic.
Claim 15
Dependent Claim
16 words
The method according to claim 1, wherein said liquid ambient is comprised of a salt solution.
Claim 16
Independent Claim
62 words
A method to anisotropically etch lead zirconate titanate comprising the steps of (a) immersing a surface of said lead zirconate titanate in 12 molar hydrochloric acid; and (b) illuminating portions of said surface with radiation produced by a mercury xenon arc lamp, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.
Claim 17
Independent Claim
62 words
A method to anisotropically etch lead zirconate titanate comprising the steps of (a) immersing a surface of said lead zirconate titanate in 12 molar hydrochloric acid; and (b) illuminating portions of said surface with radiation produced by a mercury xenon arc lamp, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.
Claim 18
Independent Claim
53 words
A method of anisotropically etch a titanate material comprising the steps of (a) submersing a surface of said titanate material in a liquid ambient; and (b) illuminating portions of said surface with radiation, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.
Claim 19
Independent Claim
53 words
A method of anisotropically etch a titanate material comprising the steps of (a) submersing a surface of said titanate material in a liquid ambient; and (b) illuminating portions of said surface with radiation, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.