US4391683A
Expired / Lapsed
US
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Mask structures for photoetching procedures
Assignee: AT&T Inc
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Filing: 1982-09-10
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Granted: 1983-07-05
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Expires: 2002-09-10
Abstract
Abstract A mask structure is described which is extremely useful for use in various photoetching processes where etching rate depends on radiation intensity on the etched surface. Such processes are extremely useful for producing various geometrical patterns on surfaces. The mask is made up of alternate areas of opaque and transparent areas which when introduced into an optical imaging system ordinary aberrations produce a pattern on the surface to be etched with the desired continuous spatial variation of radiation intensity. A particular advantage of the mask structure is that it can easily be made using an Electron Beam Exposure System. The mask is particularly useful for electrochemical photoetching processes carried out on compound semiconductors. The mask structure is usefully used to photoetch integral lenses on light emitting diodes. This photoetching process produces a variety of lens structures on LED devices with great accuracy. Also, a large array of lens structures are produced simultaneously which is highly advantageous economically.
Inventors
- 👤 Reginald R. Buckley
- 👤 Frederick W. Ostermayer, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:09
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; C25F3/14; G; G03; G03F; G03F1/00; G03F1/50; H10P50/20; H10P50/60; H10P50/61; H10P50/617; H10P50/691; H10P50/693; H10P50/695; H10P52/00; H10P95/00; H10P95/70
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
65 words
A process for fabricating a device comprising the step of photoetching a surface where etching rate depends on radiation intensity incident on said surface characterized in that the mask comprises alternating opaque and transparent areas and the mask is imaged onto the surface by an optical system with aberrations and diffraction so as to produce radiation intensity on the surface that varies continuously with position.
Claim 2
Dependent Claim
65 words
A process for fabricating a device comprising the step of photoetching a surface where etching rate depends on radiation intensity incident on said surface characterized in that the mask comprises alternating opaque and transparent areas and the mask is imaged onto the surface by an optical system with aberrations and diffraction so as to produce radiation intensity on the surface that varies continuously with position.
Claim 3
Dependent Claim
15 words
The process of claim 1 in which the mask comprises alternating opaque and transparent rings.
Claim 4
Dependent Claim
15 words
The process of claim 2 in which the rings have thickness less than 10 μm.
Claim 5
Dependent Claim
16 words
The process of claim 3 in which the rings have thickness of less than 5 μm.
Claim 6
Dependent Claim
17 words
The process of claim 1 in which the size of the mask is less than 100 μm.
Claim 7
Dependent Claim
17 words
The process of clam 5 in which the size of the mask is less than 50 μm.
Claim 8
Dependent Claim
17 words
The process of clam 5 in which the size of the mask is less than 50 μm.
Claim 9
Dependent Claim
24 words
The process of claim 1 in which the mask is part of an array of masks with more than 20 masks in the array.
Claim 10
Dependent Claim
138 words
The process of claim 1 in which the surface to be etched is the surface of a compound semiconductor and the photoetching process is an electrochemical photoetching process in which electric current is passed through the compound semiconductor, electrolytic solution with conductivity greater than 0.0001 mhos/cm and a cathode characterized in that the step further comprises a. applying a potential to the semiconducting compound which is between the maximum potential of the valence band of the semiconductor compound in the electrolytic solution and the minimum potential of the conduction band of the semiconductor compound in the electrolytic solution; b. illuminating the part of the surface of the compound semiconductor to be etched with radiation of sufficient energy to produce holes in the valence bond; c. including the composition of the species from the surface of the compound semiconductor.
Claim 11
Dependent Claim
15 words
The process of claim 8 in which the compound semiconductor is a II-VI compound semiconductor.
Claim 12
Dependent Claim
20 words
The process of claim 9 in which the compound semiconductor is selected from the group consisting of CdS, CdSe, HgCdTe.
Claim 13
Dependent Claim
15 words
The process of claim 8 in which the compound semiconductor is a III-V compound semiconductor.
Claim 14
Dependent Claim
31 words
The process of claim 11 in which the compound semiconductor is selected from the group consisting of GaP, GaAS, AlAs, AlP, AlSb, InSb, InAs, InP, GaInAs, GaInP, GaInAsP, GaAlP and GaAlAs.
Claim 15
Dependent Claim
17 words
The process of claim 8 in which the pH of the electrolytic solution is greater than 9.
Claim 16
Dependent Claim
13 words
The process of claim 13 in which the pH is greater than 11.
Claim 17
Dependent Claim
17 words
The process of claim 8 in which the pH of the electrolytic solution is less than 5.
Claim 18
Dependent Claim
11 words
The process of claim 15 in which the pH is 3.2.
Claim 19
Dependent Claim
23 words
The process of claim 8 in which the electrolytic solution comprises an acid selected from the group consisting of HF, HCl, and HBr.
Claim 20
Dependent Claim
20 words
The process of claim 8 in which the acid is hydrofluoric acid with concentration range between 0.01 and 5 molar.
Claim 21
Dependent Claim
18 words
The process of claim 18 in which the concentration of hydrofluoric acid is between 0.5 and 2 molar.
Claim 22
Dependent Claim
13 words
The process of claim 19 in which salts are added to promote conductivity.
Claim 23
Dependent Claim
21 words
The process of claim 20 in which the salt is a fluoride salt with concentration range from 0.1 to 2 molar.
Claim 24
Dependent Claim
26 words
The process of claim 8 in which the compound semiconductor is n-type InP and the potential on the SCE scale is between -0.5 and +1.2 volts.
Claim 25
Dependent Claim
19 words
The process of claim 22 in which the potential on the SCE scale is between 0.2 and 0.5 volts.
Claim 26
Dependent Claim
22 words
The process of claim 8 in which the compound semiconductor is n-type GaAs and the potential is between -0.8 and 1.0 volts.
Claim 27
Dependent Claim
15 words
The process of claim 24 in which the potential is between -0.4 and +0.4 volts.
Claim 28
Dependent Claim
14 words
The process of claim 8 in which the device is a light emitting diode.
Claim 29
Dependent Claim
18 words
The process of claim 26 in which the etching procedure produces a lens on the light emitting diode.
Claim 30
Dependent Claim
19 words
The process of claim 27 in which the etched lens is on the substrate of the light emitting diode.
Claim 31
Dependent Claim
12 words
The process of claim 28 in which the substrate is n-type InP.
Claim 32
Dependent Claim
33 words
The process of claim 29 in which the photomask comprises alternating opaque and transparent rings of such width that the average transmission through adjacent pairs of rings equals the transmission given by ##EQU3##
References Cited (Backward Citations)
US3900737A
Cited
US4351706A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-04 | 1987-01-03 | 1987-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-04 | 1991-01-03 | 1991-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-04 | 1995-01-03 | 1995-07-05 | $7700.00 | Window Closed / Lapsed |