US5201989A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Anisotropic niobium pentoxide etch
Assignee: Texas Instruments Inc
•
Filing: 1992-04-20
•
Granted: 1993-04-13
•
Expires: 2012-04-20
Abstract
Abstract A niobium pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Nb2O5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Nb2O5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25 DEG C.). Without illumination, the Nb2O5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
Inventors
- 👤 Monte A. Douglas
- 👤 Howard R. Beratan
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 02:04
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/53; C04B41/5338; C04B41/5353; C04B41/80; C04B41/91; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2041; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; C04B2111/00; C04B2111/00241; C04B2111/00387; H10D1/682
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
52 words
A method to anisotropically etch niobium pentoxide comprising the steps of (a) submersing a surface of said niobium pentoxide in a liquid ambient; and (b) illuminating portions of said surface with radiation, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.
Claim 2
Independent Claim
52 words
A method to anisotropically etch niobium pentoxide comprising the steps of (a) submersing a surface of said niobium pentoxide in a liquid ambient; and (b) illuminating portions of said surface with radiation, thereby etching said illuminated portions of said surface at a substantially greater rate than the unilluminated portions of said surface.
Claim 3
Dependent Claim
30 words
The method according to claim 1, wherein said illuminated portions of said surface are at a temperature substantially the same as the temperature of the unilluminated portions of said surface.
Claim 4
Dependent Claim
15 words
The method according to claim 1, wherein said liquid ambient is comprised of hydrofluoric acid.
Claim 5
Dependent Claim
17 words
The method according to claim 1, wherein said radiation is produced by a mercury xenon arc lamp.
Claim 6
Dependent Claim
20 words
The method according to claim 1, wherein the direction of propagation of said radiation is substantially orthogonal to said surface.
Claim 7
Dependent Claim
29 words
The method according to claim 1, wherein an etch mask is interposed between the source of said radiation and said surface, whereby portions of said surface are not illuminated.
Claim 8
Dependent Claim
15 words
The method according to claim 6, wherein said etch mask is comprised of organic photoresist.
Claim 9
Dependent Claim
13 words
The method according to claim 6, wherein said etch mask is silicon nitride.
Claim 10
Dependent Claim
14 words
The method according to claim 6, wherein said etch mask is a noble metal.
Claim 11
Dependent Claim
12 words
The method according to claim 9, wherein said noble metal is platinum.
Claim 12
Dependent Claim
12 words
The method according to claim 1, wherein said liquid ambient is acidic.
Claim 13
Dependent Claim
16 words
The method according to claim 1, wherein said liquid ambient is comprised of a salt solution.
Claim 14
Independent Claim
59 words
A method to anisotropically etch niobium pentoxide comprising the steps of (a) immersing a surface of said niobium pentoxide in 10% hydrofluoric acid; and (b) illuminating portions of said surface with radiation produced by a mercury xenon arc lamp, thereby etching said illuminated portions of said surface at a substantially greater rate than the illuminated portions of said surface.
Claim 15
Independent Claim
59 words
A method to anisotropically etch niobium pentoxide comprising the steps of (a) immersing a surface of said niobium pentoxide in 10% hydrofluoric acid; and (b) illuminating portions of said surface with radiation produced by a mercury xenon arc lamp, thereby etching said illuminated portions of said surface at a substantially greater rate than the illuminated portions of said surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-12 | 1996-10-12 | 1997-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-12 | 2000-10-12 | 2001-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-12 | 2004-10-12 | 2005-04-13 | $7700.00 | Window Closed / Lapsed |