US5704985A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device and a method for epitaxially growing objects by CVD
Assignee: STMicroelectronics Silicon Carbide AB
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Filing: 1995-08-04
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Granted: 1998-01-06
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Expires: 2015-08-04
Abstract
Abstract A device for epitaxially growing objects of SiC by Chemical Vapor Deposition on a substrate comprises a substantially cylindrical susceptor having continuous circumferential walls with a substantially uniform thickness surrounding a chamber receiving the substrate, the walls being surrounded by thermal insulation. The circumferential susceptor walls and thereby the substrate and a gas mixture fed to the substrate for the growth are heated to a temperature level in the range of 2000°-2500° C. at which sublimation of the grown material starts to considerably increase. The gas mixture is fed into the susceptor with a composition and at a rate that ensures a positive growth.
Inventors
- 👤 Olle Kordina
- 👤 Christer Hallin
- 👤 Erik Janzen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:32
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36; C30B29/38
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
123 words
A device for epitaxially growing objects of SiC, by Chemical Vapor Deposition on a substrate, said device comprising: a substantially cylindrical susceptor having continuous, closed circumferential walls with a substantially uniform thickness for defining a chamber receiving the substrate and a gas mixture, said susceptor walls being surrounded by thermal insulating means; means for heating said circumferential susceptor walls and thereby the substrate and said gas mixture fed to the substrate for the growth by feeding means to a temperature level in the range of 2000°-2500° C. at which sublimation of the grown material starts to considerably increase; said feeding means being adapted to feed said gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.
Claim 2
Independent Claim
123 words
A device for epitaxially growing objects of SiC, by Chemical Vapor Deposition on a substrate, said device comprising: a substantially cylindrical susceptor having continuous, closed circumferential walls with a substantially uniform thickness for defining a chamber receiving the substrate and a gas mixture, said susceptor walls being surrounded by thermal insulating means; means for heating said circumferential susceptor walls and thereby the substrate and said gas mixture fed to the substrate for the growth by feeding means to a temperature level in the range of 2000°-2500° C. at which sublimation of the grown material starts to considerably increase; said feeding means being adapted to feed said gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.
Claim 3
Dependent Claim
33 words
A device according to claim 1, wherein the inner walls of the susceptor are covered by a plate made of SiC, an alloy of SiC and the material grown, or the material grown.
Claim 4
Dependent Claim
18 words
A device according to claim 1, adapted for growing boules and wherein said substrate is a seed crystal.
Claim 5
Dependent Claim
36 words
A device according to claim 3, wherein said heating means is arranged to heat the susceptor walls to a temperature within the temperature ranged used when such boules are produced by a conventional seeded sublimation technique.
Claim 6
Dependent Claim
14 words
A device according to claim 1, wherein said device is adapted for growing layers.
Claim 7
Dependent Claim
31 words
A device according to claim 1, wherein the susceptor is adapted to be positioned with the circumferential walls extending substantially vertically in the direction of the gas feed into the susceptor.
Claim 8
Dependent Claim
20 words
A device according to claim 1, wherein said heating means is a Rf-field radiating means surrounding said circumferential susceptor walls.
Claim 9
Dependent Claim
29 words
A device according to claim 1, wherein the inner walls of the susceptor are made of SiC, an alloy of SiC and the material grown, or the material grown.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-05 | 2001-07-07 | 2002-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-05 | 2005-07-07 | 2006-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-05 | 2009-07-07 | 2010-01-06 | $7700.00 | Window Closed / Lapsed |