US4013503A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Filamentary silicon carbide crystals by VLS growth in molten iron
Assignee: Philips North America LLC
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Filing: 1975-07-25
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Granted: 1977-03-22
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Expires: 1995-07-25
Abstract
Abstract A method of growing silicon carbide whiskers from a gaseous phase by means of a vapor-liquid-solid mechanism on a substrate using iron in a finely divided state as a solvent for the silicon carbide.
Inventors
- 👤 Wilhelmus Franciscus Knippenberg
- 👤 Gerrit Verspui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 00:31
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/36; B; B01; B01D; B01D39/00; B01D39/02; B01D39/06; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956; C01B32/963; C01B32/984; C04; C04B; C04B35/00; C04B35/622; C04B35/62227; C30B11/00; C30B11/04; C30B11/08; C30B11/12; C30B25/00; C30B25/005; C01P; C01P2004/00; C01P2004/10; C01P2004/60; C01P2004/61; Y; Y10; Y10S; Y10S264/00; Y10S264/19
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
105 words
A method of manufacturing filamentary crystals of silicon carbide, comprising the steps of: applying elemental iron in finely divided form to a substrate surface capable of withstanding temperatures in the range of 1150° C to 1400° C; and exposing said substrate surface to an atmosphere containing carbon and silicon at a temperature between 1150° C and 1400° C, until droplets comprising iron form on said surface dissolving carbon and silicon from said atmosphere and filamentary crystals of silicon carbide of desired length grow from said surface at the sites of said droplets carrying said droplets away from said surface on the ends of said crystals.
Claim 2
Independent Claim
105 words
A method of manufacturing filamentary crystals of silicon carbide, comprising the steps of: applying elemental iron in finely divided form to a substrate surface capable of withstanding temperatures in the range of 1150° C to 1400° C; and exposing said substrate surface to an atmosphere containing carbon and silicon at a temperature between 1150° C and 1400° C, until droplets comprising iron form on said surface dissolving carbon and silicon from said atmosphere and filamentary crystals of silicon carbide of desired length grow from said surface at the sites of said droplets carrying said droplets away from said surface on the ends of said crystals.
Claim 3
Dependent Claim
21 words
A method as defined in claim 1 wherein said atmosphere is created by reacting elemental carbon and silica with hydrogen gas.
Claim 4
Dependent Claim
13 words
A method as defined in claim 1 wherein said atmosphere contains hydrogen gas.
Claim 5
Dependent Claim
31 words
A method as defined in claim 1 wherein said substrate surface is composed of a material selected from the group consisting of alumina, graphite, silicon carbide and mixtures of said group.
Claim 6
Dependent Claim
25 words
A method as defined in claim 1 wherein said elemental iron applied to said surface is of an alloy having iron as the principal constituent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-21 | 1980-09-20 | 1981-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-21 | 1984-09-20 | 1985-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-21 | 1988-09-20 | 1989-03-22 | $7700.00 | Window Closed / Lapsed |