US3053635A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing silicon carbide crystals
Assignee: Clevite Corp
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Filing: 1960-09-26
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Granted: 1962-09-11
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Expires: 1980-09-26
Abstract
No abstract record available.
Inventors
- 👤 Shockley William
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:29
CPC Classifications
C; C30; C30B; C30B9/00; C30B29/00; C30B29/10; C30B29/36
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
135 words
THE METHOD OF GROWING CARBIDE CRYSTALS WHICH COMPRISES FORMING A BATH OF CARBON AND SILICON DISSOLVED IN A MOLTEN SOLVENT WHICH DISSOLVES AN APPRECIABLE QUANTITY OF SILICON CARBIDE AT A TEMPERATURE BELOW THE SOLVENT''S VAPORIZATION TEMPERATURE AND WHICH HAS AN INCREASING SOLUBILITY OF SILICON CARBIDE WITH INCREASING TEMPERATURE WITH THE SOLUBILITY PROCESS BEING REVERSIBLE, MAINTAINING SAID BATH AT A MOLTEN TEMPERATURE, ADJUSTING THE CONCENTRATION OF THE CARBON AND SILICON AT SAID TEMPERATURE UNTIL THE BATH IS AT A SATURATION POINT FOR SILICON CARBIDE, INSERTING A SILICON CARBIDE CRYSTAL SEED INTO SAID MOLTEN BATH AND WITHDRAWING THE SEED FROM THE BATH, SAID SEED SERVING TO COOL A SURROUNDING PORTION OF THE BATH TO FORM A PORTION WHICH IS SURPERSATURATED WITH SILICON CARBIDE WHEREBY SILICON CARBIDE PRECIPITATES ON SAID SEED AS IT IS WITHDRAWN FROM THE SOLUTION.
Claim 2
Independent Claim
135 words
THE METHOD OF GROWING CARBIDE CRYSTALS WHICH COMPRISES FORMING A BATH OF CARBON AND SILICON DISSOLVED IN A MOLTEN SOLVENT WHICH DISSOLVES AN APPRECIABLE QUANTITY OF SILICON CARBIDE AT A TEMPERATURE BELOW THE SOLVENT''S VAPORIZATION TEMPERATURE AND WHICH HAS AN INCREASING SOLUBILITY OF SILICON CARBIDE WITH INCREASING TEMPERATURE WITH THE SOLUBILITY PROCESS BEING REVERSIBLE, MAINTAINING SAID BATH AT A MOLTEN TEMPERATURE, ADJUSTING THE CONCENTRATION OF THE CARBON AND SILICON AT SAID TEMPERATURE UNTIL THE BATH IS AT A SATURATION POINT FOR SILICON CARBIDE, INSERTING A SILICON CARBIDE CRYSTAL SEED INTO SAID MOLTEN BATH AND WITHDRAWING THE SEED FROM THE BATH, SAID SEED SERVING TO COOL A SURROUNDING PORTION OF THE BATH TO FORM A PORTION WHICH IS SURPERSATURATED WITH SILICON CARBIDE WHEREBY SILICON CARBIDE PRECIPITATES ON SAID SEED AS IT IS WITHDRAWN FROM THE SOLUTION.
Claim 3
Independent Claim
74 words
THE METHOD OF GROWING SILICON CARBIDE CRYSTALS WHICH COMPRISES FORMING A MOLTLEN BATH OF CARBON AND SILICON DISSOLVED IN A MOLTEN SOLVENT WHICH DISSOLVES AND APPRECIABLE QUANTITY OF SILICON CARBIDE AT A TEMPERATURE BELOW THE SOLVENT''S VAPORIZATION TEMPERTURE AND HAS AN INCREASING SOLUBILITY OF SILICON CARBIDE WITH INCREASING TEMPERATURE WITH THE SOLUTION PROCESS BEING REVERSIBLE , MAINTAINING SAID BATH AT A MOLTEN TEMPERATURE, ADJUSTING THE CONCENTRATION OF THE CARBON AND SILICON AT SAID TEM-
Claim 4
Independent Claim
74 words
THE METHOD OF GROWING SILICON CARBIDE CRYSTALS WHICH COMPRISES FORMING A MOLTLEN BATH OF CARBON AND SILICON DISSOLVED IN A MOLTEN SOLVENT WHICH DISSOLVES AND APPRECIABLE QUANTITY OF SILICON CARBIDE AT A TEMPERATURE BELOW THE SOLVENT''S VAPORIZATION TEMPERTURE AND HAS AN INCREASING SOLUBILITY OF SILICON CARBIDE WITH INCREASING TEMPERATURE WITH THE SOLUTION PROCESS BEING REVERSIBLE , MAINTAINING SAID BATH AT A MOLTEN TEMPERATURE, ADJUSTING THE CONCENTRATION OF THE CARBON AND SILICON AT SAID TEM-
Claim 5
Independent Claim
120 words
THE METHOD OF GROWING SILICON CARBIDE CRYSTALS WHICH COMPRISES FORMING A MOLTEN BATH OF CARBON AND SILICON DISSOLVED IN A MOLTEN SOLVENT SELECTED FROM THE GROUP CONSISTING OF IRON, COPPER, NICKEL, ALUMINUM, ALUMINUM-ZINC ALLOY, MANGANESE, COBALT, BISMUTH AND TIN, MAINTAINING SAID BATH AT A MOLTEN TEMPERATURE, ADJUSTING THE CONCENTRATION OF THE CARBON AND SILICON AT SAID TEMPERATURE UNTIL THE BATH IS AT A SATURATION POINT FOR SILICON CARBIDE, INSERTING A SILICON CARBIDE CYRSTALS SEED INTO SAID MOLTEN BATH, AND WITHDRAWING THE SEED FROM THE BATH, SAID SEED SERVING TO COOL A SURROUNDING PORTION OF THE BATH TO FORM A PORTION WHICH IS SUPERSATURATED WITH SILICON CARBIDE WHEREBY SILICON CARBIDE PRECIPITATES ON SAID SEED AS IT IS WITHDRAWN FROM THE SOLUTION.
Claim 6
Independent Claim
120 words
THE METHOD OF GROWING SILICON CARBIDE CRYSTALS WHICH COMPRISES FORMING A MOLTEN BATH OF CARBON AND SILICON DISSOLVED IN A MOLTEN SOLVENT SELECTED FROM THE GROUP CONSISTING OF IRON, COPPER, NICKEL, ALUMINUM, ALUMINUM-ZINC ALLOY, MANGANESE, COBALT, BISMUTH AND TIN, MAINTAINING SAID BATH AT A MOLTEN TEMPERATURE, ADJUSTING THE CONCENTRATION OF THE CARBON AND SILICON AT SAID TEMPERATURE UNTIL THE BATH IS AT A SATURATION POINT FOR SILICON CARBIDE, INSERTING A SILICON CARBIDE CYRSTALS SEED INTO SAID MOLTEN BATH, AND WITHDRAWING THE SEED FROM THE BATH, SAID SEED SERVING TO COOL A SURROUNDING PORTION OF THE BATH TO FORM A PORTION WHICH IS SUPERSATURATED WITH SILICON CARBIDE WHEREBY SILICON CARBIDE PRECIPITATES ON SAID SEED AS IT IS WITHDRAWN FROM THE SOLUTION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-09-10 | 1966-03-12 | 1966-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-09-10 | 1970-03-12 | 1970-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-09-10 | 1974-03-12 | 1974-09-11 | $7700.00 | Window Closed / Lapsed |