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US5221355A Expired / Lapsed US ⏱️ 0.0 years remaining

Silicon carbide film forming apparatus

Assignee: Shin-Etsu Chemical Co Ltd
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Filing: 1992-10-16
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Granted: 1993-06-22
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Expires: 2012-10-16
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Abstract

Abstract An apparatus for forming a high purity silicon carbide film on the inner surface of a cylindrical member by a chemical vapor phase deposition process is provided. The member to be coated is received in a reaction vessel and heated by a heating means. The apparatus includes a gas feed conduit having a distal end disposed for axial motion within the member, for feeding a source gas containing a carbon source and a silicon source into the interior of the member, and a gas discharge conduit having a distal end disposed for axial motion within the member, for discharging used reaction gases from within the member. The gas feed and discharge conduits are moved so that their distal ends move through the member in unison to continuously move the reaction region.

Inventors

  • 👤 Toshiyasu Ohashi
  • 👤 Yoshihiro Kubota
  • 👤 Kesazi Harada
  • 👤 Takesi Satoh

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 11:16
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; C23C16/04; C23C16/045; C23C16/44; C23C16/455

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 119 words
An apparatus for forming a high purity silicon carbide film on the inner surface of a cylindrical member by a chemical vapor phase deposition process, said apparatus comprising a reaction vessel for receiving the member to be coated, a heating means for heating the member in the reaction vessel, a gas feed conduit having a distal end disposed for axial motion within the member, for feeding a source gas containing a carbon source and a silicon source into the interior of the member, a gas discharge conduit having a distal end disposed for axial motion within the member, for discharging used reaction gases from within the member, and means for moving the gas feed and discharge conduits in unison.
Claim 2
Independent Claim 119 words
An apparatus for forming a high purity silicon carbide film on the inner surface of a cylindrical member by a chemical vapor phase deposition process, said apparatus comprising a reaction vessel for receiving the member to be coated, a heating means for heating the member in the reaction vessel, a gas feed conduit having a distal end disposed for axial motion within the member, for feeding a source gas containing a carbon source and a silicon source into the interior of the member, a gas discharge conduit having a distal end disposed for axial motion within the member, for discharging used reaction gases from within the member, and means for moving the gas feed and discharge conduits in unison.

References Cited (Backward Citations)

US4293594A Cited
JPS606304A Cited
JPH0372075A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-06-21 1996-12-21 1997-06-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-06-21 2000-12-21 2001-06-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-06-21 2004-12-21 2005-06-22 $7700.00 Window Closed / Lapsed

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