US5703397A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor package having an aluminum nitride substrate
Assignee: Toshiba Corp
•
Filing: 1996-11-08
•
Granted: 1997-12-30
•
Expires: 2016-11-08
Abstract
Abstract A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitride substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 μm in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package.
Inventors
- 👤 Mitsuyoshi Endo
- 👤 Hironori Asai
- 👤 Keiichi Yano
- 👤 Yoshitoshi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:44
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/62; H10W70/63; H10W70/635; H10W40/00; H10W40/20; H10W40/22; H10W40/25; H10W40/259; H10W70/65; H10W70/685; H10W70/69; H10W70/692; H10W74/00; H10W74/10; H10W74/131; H10W74/40; H10W74/43; H10W76/00; H10W76/60; H10W70/654; H10W70/655; H10W70/682; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
104 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to said one surface of said aluminum nitride substrate at an area other than a region forming said wiring pattern, through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer solely consisting of metal and having no insulating film.
Claim 2
Dependent Claim
104 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to said one surface of said aluminum nitride substrate at an area other than a region forming said wiring pattern, through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer solely consisting of metal and having no insulating film.
Claim 3
Dependent Claim
16 words
A semiconductor package according to claim 1, wherein said metallic layer is an Au--Sn alloy layer.
Claim 4
Dependent Claim
17 words
A semiconductor package according to claim 1, wherein said ceramic sealing member has a U-shaped cross section.
Claim 5
Dependent Claim
22 words
A semiconductor package according to claim 1, wherein said aluminum nitride substrate having said semiconductor element mounted thereon is a flat-surfaced substrate.
Claim 6
Dependent Claim
17 words
A semiconductor package according to claim 1, wherein said ceramic sealing member is formed of aluminum nitride.
Claim 7
Dependent Claim
101 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the adjacent connecting terminals in said lattice arrangement having an intercentral distance of not more than 1.27 mm (50 mils), and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 8
Dependent Claim
101 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the adjacent connecting terminals in said lattice arrangement having an intercentral distance of not more than 1.27 mm (50 mils), and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 9
Dependent Claim
17 words
A semiconductor package according to claim 6, wherein said sealing member is formed of a ceramic material.
Claim 10
Dependent Claim
16 words
A semiconductor package according to claim 7, wherein said sealing member is formed of aluminum nitride.
Claim 11
Dependent Claim
111 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to sail semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, a distance from an external edge of said aluminum nitride substrate to said connecting terminals being larger than an intercentral distance of the adjacent connecting terminals in said lattice arrangement, and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 12
Dependent Claim
111 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to sail semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, a distance from an external edge of said aluminum nitride substrate to said connecting terminals being larger than an intercentral distance of the adjacent connecting terminals in said lattice arrangement, and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 13
Dependent Claim
110 words
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a sealing member connected to said aluminum nitride multilayer substrate in such a manner as to seal said semiconductor element, and a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on said one or the other surface of said aluminum nitride multilayer substrate, said aluminum nitride multilayer substrate being formed by having integrally superposed in the direction of thickness aluminum nitride wiring layers provided with an internal wiring and aluminum nitride heat-conducting layers containing no internal wiring layer.
Claim 14
Dependent Claim
110 words
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a sealing member connected to said aluminum nitride multilayer substrate in such a manner as to seal said semiconductor element, and a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on said one or the other surface of said aluminum nitride multilayer substrate, said aluminum nitride multilayer substrate being formed by having integrally superposed in the direction of thickness aluminum nitride wiring layers provided with an internal wiring and aluminum nitride heat-conducting layers containing no internal wiring layer.
Claim 15
Dependent Claim
37 words
A semiconductor package according to claim 10, wherein the thickness of said aluminum nitride heat-conducting layers containing no internal wiring layer is greater than the thickness of said aluminum nitride wiring layer provided with said internal wiring.
Claim 16
Dependent Claim
125 words
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a signal wiring layer electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said signal wiring layer and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride multilayer substrate, said signal wiring layer being connected through via holes, and a surface signal wiring layer set in place on the one surface of said aluminum nitride multilayer substrate and an internal signal wiring layer set in place inside said aluminum nitride multilayer substrate, the length of said surface signal wiring layer being not more than 1/2 of the length of said signal wiring layer.
Claim 17
Dependent Claim
125 words
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a signal wiring layer electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said signal wiring layer and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride multilayer substrate, said signal wiring layer being connected through via holes, and a surface signal wiring layer set in place on the one surface of said aluminum nitride multilayer substrate and an internal signal wiring layer set in place inside said aluminum nitride multilayer substrate, the length of said surface signal wiring layer being not more than 1/2 of the length of said signal wiring layer.
Claim 18
Dependent Claim
40 words
A semiconductor package according to claim 12, wherein said surface signal wiring layer is provided in one terminal part thereof with a connecting pad and-said via holes are disposed along the opposite sides of a row of said connecting pads.
Claim 19
Dependent Claim
31 words
A semiconductor package according to claim 12, wherein the length of said surface signal wiring layer is not more than 1/4 of the total length of all the signal wiring layers.
References Cited (Backward Citations)
US3916434A
Cited
US4417392A
Cited
JPS5818944A
Cited
UST105403I4
Cited
JPS59114845A
Cited
US4827327A
Cited
JPS63100758A
Cited
EP0265367A1
Cited
US4833102A
Cited
JPS6428853A
Cited
JPH01111360A
Cited
US5097318A
Cited
JPH01272140A
Cited
EP0361495A2
Cited
US5095359A
Cited
US5018004A
Cited
US5122862A
Cited
JPH0311653A
Cited
US5045639A
Cited
US5311402A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-29 | 2001-06-30 | 2001-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-29 | 2005-06-30 | 2005-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-29 | 2009-06-30 | 2009-12-30 | $7700.00 | Window Closed / Lapsed |