Semiconductor device

Abstract

Abstract PURPOSE:To improve the quality of a semiconductor device, by forming a trench spaced a specified distance away from a cap, in the peripheral vicinity of the cap on a base surface, and absorbing the influence of superfluous solder material unnecessary for sealing. CONSTITUTION:On the periphery of a cap 7 of ceramic, a trench 9 is formed to absorb superfluous part of solder material 8 like Au-Sn which flows into there. The distance from the end-portion of the cap 7 to the trench 9, and the size of the trench 9 are experimentally obtained, and so set that only the solder material unnecessary for sealing flows into there. Thereby, the superfluous solder material unnecessary for sealing can be made to flow into the trench 9, so that the effect of the superfluous solder material unnecessary for sealing can be absorved, and the quality of a semiconductor device can be improved.

Inventors

• 👤 Isao Sasahara

Bibliographic Details