Patent US3278210A successfully refreshed from Google Patents.
Patent US5700725A successfully refreshed from Google Patents.
US5700725A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for making integrated circuits
Assignee: Nokia of America Corp
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Filing: 1997-01-29
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Granted: 1997-12-23
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Expires: 2017-01-29
Abstract
Abstract An improved apparatus and method for the manufacture of integrated circuits is disclosed. At least three protrusions extend from the wafer support susceptor. The protrusions slightly electrically decouple the wafer from the susceptor during plasma processing. The protrusions prevent gradual debris build-up on the susceptor from causing variation from lot-to-lot in plasma processing results.
Inventors
- 👤 Glenn Roy Hower
- 👤 Henry Y. Kumagai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P72/00; H10P72/70; H10P72/76; H10P72/7604; H10P72/7614; H01; H01J; H01J2237/00; H01J2237/02; H01J2237/022; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
70 words
A method of integrated circuit manufacture comprising: supporting a wafer upon at least three protrusions, said protrusions extending from a flat plate and spacially decoupling said wafer from a dc bias supplied to said flat plate; performing a plasma process upon said wafer while it is supported by said protrusions; removing said wafer from said protrusions after completion of said plasma process; and performing a cleaning process upon said plate.
Claim 2
Independent Claim
70 words
A method of integrated circuit manufacture comprising: supporting a wafer upon at least three protrusions, said protrusions extending from a flat plate and spacially decoupling said wafer from a dc bias supplied to said flat plate; performing a plasma process upon said wafer while it is supported by said protrusions; removing said wafer from said protrusions after completion of said plasma process; and performing a cleaning process upon said plate.
Claim 3
Dependent Claim
16 words
The method of claim 1 in which said plasma process is a chemical vapor deposition process.
Claim 4
Dependent Claim
19 words
The method of claim 2 in which said chemical vapor deposition process is a process for depositing silicon nitride.
Claim 5
Dependent Claim
20 words
The method of claim 1 in which said cleaning process is a plasma cleaning process utilizing CF 4 and oxygen.
Claim 6
Dependent Claim
18 words
The method of claim 1 in which said protrusions extend between 0.002 and 0.007 inches above said plate.
Claim 7
Dependent Claim
14 words
The method of claim 1 in which said protrusions are made from ceramic material.
Claim 8
Dependent Claim
17 words
The method of claim 1 in which said protrusions are bushings inserted within holes in said plate.
Claim 9
Independent Claim
71 words
A method of integrated circuit processing comprising: supporting a wafer upon at least three ceramic protrusions, said protrusions extending between 0.002 and 0.007 inches from a flat plate; performing a plasma deposition of a layer of silicon nitride upon said wafer; removing said wafer from said protrusions after completion of said plasma process; performing a cleaning process upon said plate, said cleaning process utilizing CF 4 and oxygen in a plasma.
Claim 10
Independent Claim
71 words
A method of integrated circuit processing comprising: supporting a wafer upon at least three ceramic protrusions, said protrusions extending between 0.002 and 0.007 inches from a flat plate; performing a plasma deposition of a layer of silicon nitride upon said wafer; removing said wafer from said protrusions after completion of said plasma process; performing a cleaning process upon said plate, said cleaning process utilizing CF 4 and oxygen in a plasma.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-22 | 2001-06-23 | 2001-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-22 | 2005-06-23 | 2005-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-22 | 2009-06-23 | 2009-12-23 | $7700.00 | Window Closed / Lapsed |