Patent US5698893A successfully refreshed from Google Patents.
US5698893A
Expired / Lapsed
US
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Static-random-access memory cell with trench transistor and enhanced stability
Assignee: NXP USA Inc
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Filing: 1995-01-03
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Granted: 1997-12-16
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Expires: 2015-01-03
Abstract
Abstract A static-random-access memory (SRAM) cell has been devised which contains an access transistor having a first channel region with a first surface that lies along a first crystal plane; and a trench driver transistor having a second channel region with a second surface that lies along a second crystal plane. The first and second crystal planes belong to a single family of equivalent crystal planes, for example, the {100} family of planes. Orienting the surfaces of the channel regions of the two transistors in this fashion improves the beta ratio of the driver and access transistors and thus greatly improves the cell stability. The β ratio is the ratio of the transconductances of the driver and access MOSFETs, or ##EQU1## and preferably has a value of at least three. Using a trench driver transistor improves the bit cell capacitance.
Inventors
- 👤 Asanga H. Perera
- 👤 J. David Burnett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:14
CPC Classifications
H; H10; H10B; H10B10/00; Y; Y10; Y10S; Y10S257/00; Y10S257/903; Y10S438/00; Y10S438/982
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
157 words
A static-random-access memory (SRAM) cell comprising: a monocrystalline semiconductor region; a planar access transistor having a first channel region with a first surface that lies along a crystal plane of a {110} family of crystal planes, wherein: the first channel region lies within the monocrystalline semiconductor region; and the first channel region has a first channel length that extends in a first direction: and a trench driver transistor having a gate electrode and a second channel region with a second surface that lies along a crystal plane of a {100} family of crystal planes, wherein: the second channel region lies within the monocrystalline semiconductor region; the trench driver transistor at least partially lies within a trench having opposing sides that extend in a second direction and a third direction that is substantially parallel to the second direction; the first and second directions form an angle of approximately 45 or 135 degrees; and the second surface is vertical.
Claim 2
Dependent Claim
157 words
A static-random-access memory (SRAM) cell comprising: a monocrystalline semiconductor region; a planar access transistor having a first channel region with a first surface that lies along a crystal plane of a {110} family of crystal planes, wherein: the first channel region lies within the monocrystalline semiconductor region; and the first channel region has a first channel length that extends in a first direction: and a trench driver transistor having a gate electrode and a second channel region with a second surface that lies along a crystal plane of a {100} family of crystal planes, wherein: the second channel region lies within the monocrystalline semiconductor region; the trench driver transistor at least partially lies within a trench having opposing sides that extend in a second direction and a third direction that is substantially parallel to the second direction; the first and second directions form an angle of approximately 45 or 135 degrees; and the second surface is vertical.
Claim 3
Dependent Claim
25 words
The SRAM cell of claim 1 further comprising a load resistor having a resistive portion that overlies the gate electrode of the trench driver transistor.
Claim 4
Dependent Claim
15 words
The SRAM cell of claim 1 where the monocrystalline semiconductor region is a (110) substrate.
Claim 5
Dependent Claim
32 words
The SRAM cell of claim 1, wherein the trench driver transistor has a source and at least partially lies within a trench having a bottom surface that completely lies within the source.
Claim 6
Dependent Claim
170 words
A process for forming a static-random-access memory (SRAM) cell comprising the steps of: providing a monocrystalline semiconductor region; forming a planar access transistor having a first channel region with a first surface that lies along a crystal plane of a {110} family of crystal planes, wherein: the first channel region lies within the monocrystalline semiconductor region; and the first channel region has a first channel length that extends in a first direction; and forming a trench driver transistor having a gate electrode a second channel region with a second surface that lies along a crystal plane of a {100} family of crystal planes, wherein: the second channel region lies within the monocrystalline semiconductor region; a step of forming the trench driver transistor includes a step of forming a trench having opposing sides that extend in a second direction and a third direction that is substantially parallel to the second direction; the first and second directions form an angle of approximately 45 or 135 degrees; and the second surface is vertical.
Claim 7
Dependent Claim
170 words
A process for forming a static-random-access memory (SRAM) cell comprising the steps of: providing a monocrystalline semiconductor region; forming a planar access transistor having a first channel region with a first surface that lies along a crystal plane of a {110} family of crystal planes, wherein: the first channel region lies within the monocrystalline semiconductor region; and the first channel region has a first channel length that extends in a first direction; and forming a trench driver transistor having a gate electrode a second channel region with a second surface that lies along a crystal plane of a {100} family of crystal planes, wherein: the second channel region lies within the monocrystalline semiconductor region; a step of forming the trench driver transistor includes a step of forming a trench having opposing sides that extend in a second direction and a third direction that is substantially parallel to the second direction; the first and second directions form an angle of approximately 45 or 135 degrees; and the second surface is vertical.
Claim 8
Dependent Claim
28 words
The process of claim 5 further comprising a step of forming a load resistor having a resistive portion that overlies the gate electrode of the trench driver transistor.
Claim 9
Dependent Claim
14 words
The process of claim 5 where the monocrystalline semiconductor region is a (110) substrate.
Claim 10
Dependent Claim
43 words
The process of claim 5, wherein the step of forming the trench driver transistor is performed so that the trench driver transistor has a source and at least partially lies within a trench having a bottom surface that completely lies within the source.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-15 | 2001-06-16 | 2001-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-15 | 2005-06-16 | 2005-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-15 | 2009-06-16 | 2009-12-16 | $7700.00 | Window Closed / Lapsed |