US3860948A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
Assignee: Hitachi Ltd
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Filing: 1972-11-08
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Granted: 1975-01-14
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Expires: 1992-11-08
Abstract
Abstract A silicon crystal body having a major surface lying parallel to a (110) or (100) crystal plane is prepared. A silicon oxide film is formed on the major surface by heating the body in an atmosphere containing steam. Then, an aluminum layer is formed on the oxide film. Thereby the amount of surface donors induced in the major surface of the body by the existence of the oxide film is smaller than the amount of induced surface donors to be obtained in a crystal plane of a like silicon body but lying parallel to a (111) plane covered with a like oxide film. The amount of induced surface donors is further reduced by subjecting said body to a heat treatment under application across said oxide film of such a voltage as that which renders the aluminum layer provided on the oxide film negative polarity. This invention is applied to the manufacture of, for example, MOS field effect transistors, MOS diodes and so-called planar transistors.
Inventors
- 👤 Minoru Ono
- 👤 Toshimitsu Momoi
- 👤 Youji Kawachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:49
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10D99/00; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
97 words
A SEMICONDUCTOR DEVICE COMPRISING: A SILICON CRYSTALLINE BODY OF A GIVEN CONDUCTIVITY TYPE HAVING A SUBSTANTIALLY PLANE MAJOR SURFACE LYING SUBSTANTIALLY PARALLEL TO A 100 CRYSTAL PLANE; A SILICON OXIDE FILM COVERING SAID MAJOR SURFACE AND HAVING A TENDENCY TO INDUCE SURFACE DONORS IN SAID MAJOR SURFACE OF SAID BODY CONTIGUOUS THEREWITH, THE SURFACE DENSITY OF SURFACE DONORS INDUCED IN SAID MAJOR SURFACE OF SAID BODY BY THE EXISTENCE OF SAID FILM BEING NOT MORE THAN 3.5 X 10**11 ELECTRONS/CM2; AND ELECTRODE MEANS OPERATIVELY CONNECTED TO THE COMBINATION OF SAID SILICON CRYSTAL BODY AND SAID OXIDE FILM.
Claim 2
Dependent Claim
97 words
A SEMICONDUCTOR DEVICE COMPRISING: A SILICON CRYSTALLINE BODY OF A GIVEN CONDUCTIVITY TYPE HAVING A SUBSTANTIALLY PLANE MAJOR SURFACE LYING SUBSTANTIALLY PARALLEL TO A 100 CRYSTAL PLANE; A SILICON OXIDE FILM COVERING SAID MAJOR SURFACE AND HAVING A TENDENCY TO INDUCE SURFACE DONORS IN SAID MAJOR SURFACE OF SAID BODY CONTIGUOUS THEREWITH, THE SURFACE DENSITY OF SURFACE DONORS INDUCED IN SAID MAJOR SURFACE OF SAID BODY BY THE EXISTENCE OF SAID FILM BEING NOT MORE THAN 3.5 X 10**11 ELECTRONS/CM2; AND ELECTRODE MEANS OPERATIVELY CONNECTED TO THE COMBINATION OF SAID SILICON CRYSTAL BODY AND SAID OXIDE FILM.
Claim 3
Dependent Claim
80 words
A SEMICONDUCTOR DEVICE COMPRISING: A SILICON CRYSTALLINE BODY OF A GIVEN CONDUCTIVITY TYPE HAVING A SUBSTANTIALLY PLANE MAJOR SURFACE LYING SUBSTANTIALLY PARALLEL TO A 110 CRYSTAL PLANE; A SILICON OXIDE FILM COVERING SAID MAJOR SURFACE AND HAVING A TEMDENCY TO INDUCE SURFACE DONORS IN SAID MAJOR SURFACE OF SAID BODY CONTIGUOUS THEREWITH, THE SURFACE DENSITY OF SURFACE DONORS INDUCED IN SAID MAJOR SURFACE OF SAID BODY BY THE EXISTENCE OF SAID FILM BEING NOT MORE THAN 5 X 10**11 ELECTRONS/CM2.
Claim 4
Dependent Claim
80 words
A SEMICONDUCTOR DEVICE COMPRISING: A SILICON CRYSTALLINE BODY OF A GIVEN CONDUCTIVITY TYPE HAVING A SUBSTANTIALLY PLANE MAJOR SURFACE LYING SUBSTANTIALLY PARALLEL TO A 110 CRYSTAL PLANE; A SILICON OXIDE FILM COVERING SAID MAJOR SURFACE AND HAVING A TEMDENCY TO INDUCE SURFACE DONORS IN SAID MAJOR SURFACE OF SAID BODY CONTIGUOUS THEREWITH, THE SURFACE DENSITY OF SURFACE DONORS INDUCED IN SAID MAJOR SURFACE OF SAID BODY BY THE EXISTENCE OF SAID FILM BEING NOT MORE THAN 5 X 10**11 ELECTRONS/CM2.
Claim 5
Dependent Claim
140 words
A field effect type semiconductor device comprising: a silicon single crystalline substrate of a first conductivity type; having a substantially plane major surface lying substantially parallel to a (100) crystal plane; a source and a drain region of a second conductivity type opposite to said first conductivity type formed in said major surface; a silicon oxide film covering said major surface including the substrate surface lying between said source and drain regions and having a tendency to induce surface donors in said major surface of said body thereunder, the surface density of surface donors induced in said substrate surface lying between said source and drain regions by the existence of said film being not more than 3.5 X 1011 electrons/cm2; and a gate electrode covering said film covering said major surface of said substrate between said source and drain regions.
Claim 6
Dependent Claim
140 words
A field effect type semiconductor device comprising: a silicon single crystalline substrate of a first conductivity type; having a substantially plane major surface lying substantially parallel to a (100) crystal plane; a source and a drain region of a second conductivity type opposite to said first conductivity type formed in said major surface; a silicon oxide film covering said major surface including the substrate surface lying between said source and drain regions and having a tendency to induce surface donors in said major surface of said body thereunder, the surface density of surface donors induced in said substrate surface lying between said source and drain regions by the existence of said film being not more than 3.5 X 1011 electrons/cm2; and a gate electrode covering said film covering said major surface of said substrate between said source and drain regions.
Claim 7
Dependent Claim
182 words
A planar type semiconductor device comprising: a monocrystalline silicon body having a substantially plane major surface lying substantially parallel to a (100) crystal plane and including a first region of a first conductivity type extending to said major surface, a second region of a second conductivity type opposite to said first conductivity type formed in said major surface and forming with said first region a first PN junction extending to said surface and defining a first enclosure of the second region, a third region of said first conductivity type formed in said major surface and in said second region and forming with said second region a second PN junction extending to said major surface and defining a second enclosure of said third region in said first enclosure; an oxide film covering said major surface of said substrate and having a tendency to induce surface donors in said major surface of said body thereunder, the surface density of surface donors induced in said major surface being not more than 3.5 X 1011 electrons/cm2; and electrode means connected to said second and third regions.
Claim 8
Dependent Claim
182 words
A planar type semiconductor device comprising: a monocrystalline silicon body having a substantially plane major surface lying substantially parallel to a (100) crystal plane and including a first region of a first conductivity type extending to said major surface, a second region of a second conductivity type opposite to said first conductivity type formed in said major surface and forming with said first region a first PN junction extending to said surface and defining a first enclosure of the second region, a third region of said first conductivity type formed in said major surface and in said second region and forming with said second region a second PN junction extending to said major surface and defining a second enclosure of said third region in said first enclosure; an oxide film covering said major surface of said substrate and having a tendency to induce surface donors in said major surface of said body thereunder, the surface density of surface donors induced in said major surface being not more than 3.5 X 1011 electrons/cm2; and electrode means connected to said second and third regions.
Claim 9
Dependent Claim
88 words
A semiconductor device comprising: a silicon crystal body of a given conductivity type having a substantially plane major surface lying substantially parallel to a (100) crystal plane; an insulating film consisting essentially of silicon oxide covering said major surface and having a tendency to induce surface donors in said major surface of said body contiguous therewith; the surface density of induced surface donors being not more than 3.5 X 1011 electrons/cm2; and electrode means operatively connected to the combination of said silicon crystal body and said insulating film.
Claim 10
Dependent Claim
88 words
A semiconductor device comprising: a silicon crystal body of a given conductivity type having a substantially plane major surface lying substantially parallel to a (100) crystal plane; an insulating film consisting essentially of silicon oxide covering said major surface and having a tendency to induce surface donors in said major surface of said body contiguous therewith; the surface density of induced surface donors being not more than 3.5 X 1011 electrons/cm2; and electrode means operatively connected to the combination of said silicon crystal body and said insulating film.
Claim 11
Dependent Claim
126 words
A field effect type semiconductor device comprising: a silicon single crystalline substrate of a first conductivity type having a substantially plane major surface lying substantially parallel to a (100) crystal plane; a pair of source and drain regions of a second conductivity type opposite to said first conductivity type disposed in said major surface; an insulating film consisting essentially of silicon oxide covering at least a portion of said major surface between said source and drain regions; and a gate electrode formed on said insulating film covering said portion of said major surface between said source and drain regions; the density of surface charge induced in the surface of the substrate by the existence of said insulating film being not more than 3.5 X 1011 electrons/cm2.
Claim 12
Dependent Claim
126 words
A field effect type semiconductor device comprising: a silicon single crystalline substrate of a first conductivity type having a substantially plane major surface lying substantially parallel to a (100) crystal plane; a pair of source and drain regions of a second conductivity type opposite to said first conductivity type disposed in said major surface; an insulating film consisting essentially of silicon oxide covering at least a portion of said major surface between said source and drain regions; and a gate electrode formed on said insulating film covering said portion of said major surface between said source and drain regions; the density of surface charge induced in the surface of the substrate by the existence of said insulating film being not more than 3.5 X 1011 electrons/cm2.
Claim 13
Dependent Claim
179 words
A planar type semiconductor device comprising: a monocrystalline silicon body having a substantially plane major surface lying substantially parallel with a (100) crystal plane and including a first region of a first conductivity type extending to said major surface, a second region of a second conductivity type opposite to said first conductivity type formed in said major surface and forming with said first region a first PN junction extending to said surface and defining a first enclosure of the second region, a third region of said first conductivity type formed in said major surface and in said second region and forming with said second region a second PN junction extending to said major surface and defining a second enclosure of said third region in said first enclosure; an insulating film consisting essentially of silicon oxide covering said major surface of said substrate; and electrode means connected to said second and third regions; the density of surface charge induced in the surface of the substrate by the existence of said insulating film being not more than 3.5 X 1011 electrons/cm2.
Claim 14
Dependent Claim
179 words
A planar type semiconductor device comprising: a monocrystalline silicon body having a substantially plane major surface lying substantially parallel with a (100) crystal plane and including a first region of a first conductivity type extending to said major surface, a second region of a second conductivity type opposite to said first conductivity type formed in said major surface and forming with said first region a first PN junction extending to said surface and defining a first enclosure of the second region, a third region of said first conductivity type formed in said major surface and in said second region and forming with said second region a second PN junction extending to said major surface and defining a second enclosure of said third region in said first enclosure; an insulating film consisting essentially of silicon oxide covering said major surface of said substrate; and electrode means connected to said second and third regions; the density of surface charge induced in the surface of the substrate by the existence of said insulating film being not more than 3.5 X 1011 electrons/cm2.
Claim 15
Dependent Claim
90 words
A circuit element structure comprising: a body of monocrystalline silicon material having a surface crystallographic orientation substantially parallel to a (100) plane; a plurality of PN junctions formed in said body; said body having a silcon dioxide layer over its surface, and covering and passivating said junctions; said PN junctions forming at least a portion of a semiconductor element formed in said structure; the density of interface states at the silicon dioxide to silicon interface between said body and said layer being less than approximately 3.5 X 1011 per cm2.
Claim 16
Dependent Claim
90 words
A circuit element structure comprising: a body of monocrystalline silicon material having a surface crystallographic orientation substantially parallel to a (100) plane; a plurality of PN junctions formed in said body; said body having a silcon dioxide layer over its surface, and covering and passivating said junctions; said PN junctions forming at least a portion of a semiconductor element formed in said structure; the density of interface states at the silicon dioxide to silicon interface between said body and said layer being less than approximately 3.5 X 1011 per cm2.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-01-13 | 1978-07-15 | 1979-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-01-13 | 1982-07-15 | 1983-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-01-13 | 1986-07-15 | 1987-01-14 | $7700.00 | Window Closed / Lapsed |