US3265905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated semiconductor resistance element
Assignee: United States Department of the Army
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Filing: 1964-02-06
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Granted: 1966-08-09
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Expires: 1984-02-06
Abstract
No abstract record available.
Inventors
- 👤 Mcneil Gordon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:42
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
144 words
IN COMBINATION, AN EPITAXIAL LAYER OF INTEGRATED SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE, A TRANSISTOR HAVING A COLLECTOR, BASE AND EMITTER, SAID COLLECTOR INCLUDING A PORTION OF SAID LAYER, SAID BASE BEING A REGION OF OPPOSITE CONDUCTIVITY TYPE FORMED WITHIN SAID LAYER, SAID EMITTER BEING A REGION OF FIRST CONDUCTIVITY TYPE FORMED WITHIN SAID BASE, AND ELECTRICALLY ISOLATED RESISTANCE ELEMENT IN A RESISTANCE ZONE OF SAID FIRST CONDUCTIVITY TYPE FORMED WITHIN SAID LAYER SURROUNDED BY AN ISOLATING ZONE OF THE OPPOSITE CONDUCTIVITY TYPE, SAID ISOLATING ZONE FORMING A FIRST P-N JUNCTION WITH SAID RESISTANCE ZONE AND A SECOND P-N JUNCTION WITH SAID EPITAXIAL LAYER, A DIRECTCURRENT POTENTIAL APPLIED TO SAID ISOLATING ZONE, AND SAID DIRECT-CURRENT POTENTIAL BEING OF A MAGNITUDE AND POLARITY SUCH THAT A REVERSE BIAS IS MAINTAINED IN SAID ISOLATING ZONE WITH RESPECT TO SAID RESISTANCE ZONE AND SAID EPITAXIAL LAYER.
Claim 2
Dependent Claim
144 words
IN COMBINATION, AN EPITAXIAL LAYER OF INTEGRATED SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE, A TRANSISTOR HAVING A COLLECTOR, BASE AND EMITTER, SAID COLLECTOR INCLUDING A PORTION OF SAID LAYER, SAID BASE BEING A REGION OF OPPOSITE CONDUCTIVITY TYPE FORMED WITHIN SAID LAYER, SAID EMITTER BEING A REGION OF FIRST CONDUCTIVITY TYPE FORMED WITHIN SAID BASE, AND ELECTRICALLY ISOLATED RESISTANCE ELEMENT IN A RESISTANCE ZONE OF SAID FIRST CONDUCTIVITY TYPE FORMED WITHIN SAID LAYER SURROUNDED BY AN ISOLATING ZONE OF THE OPPOSITE CONDUCTIVITY TYPE, SAID ISOLATING ZONE FORMING A FIRST P-N JUNCTION WITH SAID RESISTANCE ZONE AND A SECOND P-N JUNCTION WITH SAID EPITAXIAL LAYER, A DIRECTCURRENT POTENTIAL APPLIED TO SAID ISOLATING ZONE, AND SAID DIRECT-CURRENT POTENTIAL BEING OF A MAGNITUDE AND POLARITY SUCH THAT A REVERSE BIAS IS MAINTAINED IN SAID ISOLATING ZONE WITH RESPECT TO SAID RESISTANCE ZONE AND SAID EPITAXIAL LAYER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-08 | 1970-02-07 | 1970-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-08 | 1974-02-07 | 1974-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-08 | 1978-02-07 | 1978-08-09 | $7700.00 | Window Closed / Lapsed |