EP0354449A2
Expired / Lapsed
EP
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Semiconductor single crystal substrate
Assignee: Seiko Epson Corp
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Filing: 1989-08-01
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Granted: —
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Expires: 2009-08-01
Abstract
Abstract A semiconductor single crystal substrate (1,11) has either both the crystal face orientation (110) and the crystal orientation of the orientation flat (1a) <110> or both the crystal face orientation (100) and the crystal orientation of the orientation flat (11a) <100>. A field effect transistor formed in said substrate (1,11), comprising source and drain regions (3,23,25), a trench gate electrode (5,24) and source and drain electrodes, has the difference between the threshold voltage at the side walls and the threshold voltage at the bottom or at the corners of the trench effectively limited.
Inventors
- 👤 Seiichi C/O Seiko Epson Corporation Iwamatsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 23:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3451; H10P14/3452; H10P14/3458; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513; H10D30/00; H10D30/60; H10D30/80; H10D30/87; H10D30/877; H10D62/00; H10D62/40; H10D62/405; H10P14/29; H10P14/2901; H10P14/2921
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
25 words
A semiconductor single crystal substrate (1) in which the crystal face orientation is (110) and the crystal orientation of the orientation flat (1a) is <110>.
Claim 2
Dependent Claim
25 words
A semiconductor single crystal substrate (1) in which the crystal face orientation is (110) and the crystal orientation of the orientation flat (1a) is <110>.
Claim 3
Dependent Claim
25 words
A semiconductor single crystal substrate (11) in which the crystal face orientation is (100) and the crystal orientation of the orientation flat (11a) is <100>.
Claim 4
Dependent Claim
25 words
A semiconductor single crystal substrate (11) in which the crystal face orientation is (100) and the crystal orientation of the orientation flat (11a) is <100>.
Claim 5
Dependent Claim
20 words
A substrate according to claim 1 or 2, wherein said semiconductor substrate (1; 11) is a silicon single crystal wafer.
Claim 6
Dependent Claim
28 words
A substrate according to claim 1 or 2, wherein said semiconductor substrate (21) is a compound semiconductor single crystal wafer containing GaAs or InP as the main ingredient.
Claim 7
Dependent Claim
33 words
A substrate according to any of claims 1 to 4 which is provided thereon with a trench gate, a source, a drain, a trench gate electrode, a source electrode and a drain electrode.
References Cited (Backward Citations)
No citation records indexed.
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