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US5698022A
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Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films
Assignee: Advanced Technology Materials Inc
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Filing: 1996-08-14
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Granted: 1997-12-16
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Expires: 2016-08-14
Abstract
Abstract A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA 3 (L) x ; (ii) phosphido complexes of the formulae M(PR 3 ) 3 or M(PR 3 ) 3 L x ; and (iii) disubstituted phosphate complexes of the formulae A 2 M(O 2 P(OR) 2 ), AM(O 2 P(OR) 2 ) 2 , and M(O 2 P(OR) 2 ) 3 , wherein: x is from 1 to 5, A=Cp or β-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C 1 -C 8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a β-diketonate compound of formula (i), L is not phosphate or phosphine oxide. The precursor composition may be employed for forming a lanthanide metal/phosphorus oxide film on a substrate, by depositing a lanthanide metal/phosphorus material on the substrate from the lanthanide metal/phosphorus precursor composition in vaporized form, and incorporating oxygen in the lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate.
Inventors
- 👤 Timothy E. Glassman
- 👤 Paul V. Chayka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:12
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C07; C07F; C07F9/00; C07F9/02; C07F9/06; C07F9/08; C07F9/09; C07F9/095; C07F9/28; C07F9/50; C07F9/5045; C23C16/22; C23C16/30; C23C16/40; C23C16/56
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
163 words
A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA 3 (L) x ; (ii) phosphido complexes of the formula M(PR 3 ) 3 or M(PR 3 ) 3 L x ; and (iii) disubstituted phosphate complexes of the formulae A 2 M(O 2 P(OR) 2 ), AM(O 2 P(OR) 2 ) 2 , and M(O 2 P(OR) 2 ) 3 , wherein: x is from 1 to 5, A=Cp or β-diketonate; M=a lanthanide metal; Cp=cyclopentadienyl, or substituted cyclopentadienyl, R=C 1 -C 8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a β-diketonate compound of formula (i), L is not phosphate or phosphine oxide.
Claim 2
Dependent Claim
163 words
A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA 3 (L) x ; (ii) phosphido complexes of the formula M(PR 3 ) 3 or M(PR 3 ) 3 L x ; and (iii) disubstituted phosphate complexes of the formulae A 2 M(O 2 P(OR) 2 ), AM(O 2 P(OR) 2 ) 2 , and M(O 2 P(OR) 2 ) 3 , wherein: x is from 1 to 5, A=Cp or β-diketonate; M=a lanthanide metal; Cp=cyclopentadienyl, or substituted cyclopentadienyl, R=C 1 -C 8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a β-diketonate compound of formula (i), L is not phosphate or phosphine oxide.
Claim 3
Dependent Claim
22 words
A precursor composition according to claim 1, wherein said precursor compound is an adduct of the formula MA 3 (L) x .
Claim 4
Dependent Claim
13 words
A precursor composition according to claim 2, wherein L is a monodentate phosphine.
Claim 5
Dependent Claim
13 words
A precursor composition according to claim 2, wherein L is a bidentate phosphine.
Claim 6
Dependent Claim
21 words
A precursor composition according to claim 1, wherein said precursor is an adduct of the formula MCp 3 (L) x .
Claim 7
Dependent Claim
21 words
A precursor composition according to claim 1, wherein said precursor is an adduct of the formula La(β-diketonate) 3 (L) x .
Claim 8
Dependent Claim
23 words
A precursor composition according to claim 1, wherein said precursor compound is a phosphido complex of the formula La(PR 3 ) 3 .
Claim 9
Dependent Claim
26 words
A precursor composition according to claim 1, wherein said precursor compound is a disubstituted phosphate complex of the formula A 2 La(O 2 P(OR) 2 ).
Claim 10
Dependent Claim
15 words
A precursor composition according to claim 1, further comprising a solvent for said precursor compound.
Claim 11
Dependent Claim
43 words
A precursor composition according to claim 9, wherein the solvent is selected from the group consisting of tetrahydrofuran, butyl acetate, tetraglyme, diethylene triamines, and mixtures thereof, with the proviso that the solvent does not contain tetraglyme or diethylene triamines when L is phosphine.
Claim 12
Dependent Claim
15 words
A precursor composition according to claim 1, wherein R is C 1 -C 4 alkyl.
Claim 13
Independent Claim
191 words
A method of forming a lanthanide metal/phosphorus oxide film on a substrate, comprising depositing a lanthanide metal/phosphorus material on the substrate from a vapor-phase lanthanide metal/phosphorus precursor composition comprising a precursor compound selected from the group consisting of: (i) adducts of the formula LaA 3 (L) x ; (ii) phosphido complexes of the formula La(PR 3 ) 3 or La(PR 3 ) 3 L x ; and (iii) disubstituted phosphate complexes of the formulae A 2 La(O 2 P(OR) 2 ), ALa(O 2 P(OR) 2 ) 2 , and La(O 2 P(OR) 2 ) 3 , wherein: x is from 1 to 5, A=Cp or β-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C 1 -C 8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a β-diketonate compound of formula (i), L is not phosphate or phosphine oxide; and incorporating oxygen in the lanthanum/phosphorus material to form the lanthanum/phosphorus oxide film on the substrate.
Claim 14
Independent Claim
191 words
A method of forming a lanthanide metal/phosphorus oxide film on a substrate, comprising depositing a lanthanide metal/phosphorus material on the substrate from a vapor-phase lanthanide metal/phosphorus precursor composition comprising a precursor compound selected from the group consisting of: (i) adducts of the formula LaA 3 (L) x ; (ii) phosphido complexes of the formula La(PR 3 ) 3 or La(PR 3 ) 3 L x ; and (iii) disubstituted phosphate complexes of the formulae A 2 La(O 2 P(OR) 2 ), ALa(O 2 P(OR) 2 ) 2 , and La(O 2 P(OR) 2 ) 3 , wherein: x is from 1 to 5, A=Cp or β-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C 1 -C 8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a β-diketonate compound of formula (i), L is not phosphate or phosphine oxide; and incorporating oxygen in the lanthanum/phosphorus material to form the lanthanum/phosphorus oxide film on the substrate.
Claim 15
Dependent Claim
25 words
A method according to claim 12, further comprising forming the vapor-phase lanthanide metal/phosphorus precursor composition by vaporization of a liquid solution of said precursor compound.
Claim 16
Dependent Claim
82 words
A method according to claim 12, wherein the step of incorporating oxygen in said lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate, comprises a step selected from those including: exposing the deposited lanthanide metal/phosphorus material to an oxygen-containing gas subsequent to deposition of the lanthanide metal/phosphorus material; depositing said material on the substrate in an oxygen-containing fluid environment; and incorporating oxygen in the lanthanide metal/phosphorus material from an oxygen-containing component of said vapor-phase lanthanide metal/phosphorus precursor composition.
Claim 17
Dependent Claim
38 words
A method according to claim 12, wherein the step of incorporating oxygen in said lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate, comprises depositing said material on the substrate in an oxygen-containing environment.
Claim 18
Dependent Claim
21 words
A method according to claim 12, wherein said precursor compound is an adduct of the formula MA 3 (L) x .
Claim 19
Dependent Claim
20 words
A method according to claim 12, wherein said precursor is an adduct of the formula MCp 3 (L) x .
Claim 20
Dependent Claim
20 words
A method according to claim 12, wherein said precursor is an adduct of the formula La(β-diketonate) 3 (L) x .
Claim 21
Dependent Claim
29 words
A method according to claim 12, wherein said precursor compound is a phosphido complex of the formulae M(PR 3 ) 3 or M(PR 3 ) 3 L x .
Claim 22
Dependent Claim
40 words
A method according to claim 12, wherein said precursor compound is a disubstituted phosphate complex of the formulae A 2 M(O 2 P(OR) 2 ), AM(O 2 P(OR) 2 ) 2 , and M(O 2 P(OR) 2 ) 3 .
Claim 23
Dependent Claim
17 words
A method according to claim 12, wherein the precursor composition comprises a solvent for said precursor compound.
Claim 24
Dependent Claim
42 words
A method according to claim 21, wherein the solvent is selected from the group consisting of tetrahydrofuran, butyl acetate, tetraglyme, diethylene triamines, and mixtures thereof, with the proviso that the solvent does not contain tetraglyme or diethylene triamines when L is phosphine.
Claim 25
Dependent Claim
14 words
A method according to claim 12, wherein R is C 1 -C 4 alkyl.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-15 | 2001-06-16 | 2001-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-15 | 2005-06-16 | 2005-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-15 | 2009-06-16 | 2009-12-16 | $7700.00 | Window Closed / Lapsed |