US5691237A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating semiconductor device
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1995-05-31
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Granted: 1997-11-25
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Expires: 2015-05-31
Abstract
Abstract A semiconductor substrate 11 having concavities and convexities in the upper surface, and silica particles (granular insulators) 15 provided in the concavities to planarize the entire upper surface of the semiconductor substrate 11 are included. First, the silica particles 15 are laid over an upper surface of a semiconductor substrate 11 to provide the granular insulators 15 in cavities in the upper surface of the semiconductor substrate 11, and the silica particles 15 provided on convexities on the upper surface of the semiconductor substrate 11 are removed, whereby the concavities 11 are buried with the silica particles 15 so as to improve global planarizarion.
Inventors
- 👤 Yoshiyuki Ohkura
- 👤 Hideki Harada
- 👤 Tadasi Oshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:22
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/025
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
79 words
A method for fabricating a semiconductor device comprising: a granular insulators laying step of laying granular insulators over an upper surface of a semiconductor substrate to provide the granular insulators in concavities in the upper surface of the semiconductor substrate; and a granular insulators removing step of removing the granular insulators provided on convexities on the upper surface of the semiconductor substrate; the granular insulators having a particle size between 0.3 to 1.5 times the height of the concavities.
Claim 2
Independent Claim
79 words
A method for fabricating a semiconductor device comprising: a granular insulators laying step of laying granular insulators over an upper surface of a semiconductor substrate to provide the granular insulators in concavities in the upper surface of the semiconductor substrate; and a granular insulators removing step of removing the granular insulators provided on convexities on the upper surface of the semiconductor substrate; the granular insulators having a particle size between 0.3 to 1.5 times the height of the concavities.
Claim 3
Dependent Claim
79 words
A method for fabricating a semiconductor device according to claim 1, further comprising: a spin on glass film applying step of applying a spin on glass film onto the upper surface of the semiconductor substrate before the granular insulators laying step; and a spin on glass film heat treating step of heat treating the spin on glass film after the granular insulator laying step to adhere the granular insulators to the semiconductor substrate through the spin on glass film.
Claim 4
Dependent Claim
77 words
A method for fabricating a semiconductor device according to claim 1, further comprising: a spin on glass film applying step of applying the spin on glass film onto the granular insulators after the granular insulators laying step; and a spin on glass film heat treating step of heat treating the spin on glass film after the spin on glass film applying step to adhere the granular insulators to the semiconductor substrate through the spin on glass film.
Claim 5
Dependent Claim
53 words
A method for fabricating a semiconductor device according to claim 1, further comprising a lift-off layer forming step of forming a lift-off layer on the semiconductor layer before the granular insulators laying step, the granular insulators removing step being for removing the lift-off layer to remove the granular insulators on the lift-off layer.
Claim 6
Dependent Claim
53 words
A method for fabricating a semiconductor device according to claim 2, further comprising a lift-off layer forming step of forming a lift-off layer on the semiconductor layer before the granular insulators laying step, the granular insulators removing step being for removing the lift-off layer to remove the granular insulators on the lift-off layer.
Claim 7
Dependent Claim
53 words
A method for fabricating a semiconductor device according to claim 3, further comprising a lift-off layer forming step of forming a lift-off layer on the semiconductor layer before the granular insulators laying step, the granular insulators removing step being for removing the lift-off layer to remove the granular insulators on the lift-off layer.
Claim 8
Dependent Claim
20 words
A method for fabricating a semiconductor device according to claim 4, wherein the lift-off layer is formed of a resist.
Claim 9
Dependent Claim
20 words
A method for fabricating a semiconductor device according to claim 4, wherein the lift-off layer is formed of amorphous carbon.
Claim 10
Dependent Claim
39 words
A method for fabricating a semiconductor device according to claim 1, wherein the granular insulators removing step is scraping the upper surface of the semiconductor substrate or grinding the semiconductor substrate to remove the granular insulators on the convexities.
Claim 11
Dependent Claim
39 words
A method for fabricating a semiconductor device according to claim 2, wherein the granular insulators removing step is scraping the upper surface of the semiconductor substrate or grinding the semiconductor substrate to remove the granular insulators on the convexities.
Claim 12
Dependent Claim
39 words
A method for fabricating a semiconductor device according to claim 3, wherein the granular insulators removing step is scraping the upper surface of the semiconductor substrate or grinding the semiconductor substrate to remove the granular insulators on the convexities.
Claim 13
Dependent Claim
70 words
A method for fabricating a semiconductor device according to claim 1, further comprising: a silicon oxide film forming step of forming a silicon oxide film onto the upper surface of the semiconductor substrate before the granular insulators laying step; and a heat treating step of heat treating the granular insulators after the granular insulators laying step to adhere the granular insulators to the semiconductor substrate through the silicon oxide film.
Claim 14
Dependent Claim
39 words
A method for fabricating a semiconductor device according to claim 12, wherein the granular insulators removing step is scraping the upper surface of the semiconductor substrate or grinding the semiconductor substrate to remove the granular insulators on the convexities.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-24 | 2009-05-26 | 2009-11-25 | $7700.00 | Window Closed / Lapsed |