EP0519393A2
Expired / Lapsed
EP
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Method for planarizing a semiconductor substrate surface
Assignee: Alcan Tech Co Inc
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Filing: 1992-06-16
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Granted: —
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Expires: 2012-06-16
Abstract
Abstract The present invention is structured including a process of depositing a film (4) composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO2 film (5) or depositing a film (5) composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO2 film (5) on the film, (4) and a process of melting and fluidizing these films so as to flatten them by applying heat treatment. <IMAGE>
Inventors
- 👤 Kazuo C/O Semiconductor Process Laboratory Maeda
- 👤 Bunya C/O Semiconductor Process Laboratory Matsui
- 👤 Yuko C/O Semiconductor Process Lab. Co. Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 06:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
71 words
A method for manufacturing a semiconductor device comprising: a process of depositing a SiO₂ film doped with impurities on a substrate surface having unevenness; a process of depositing a moisture resistant film so as to cover said SiO₂ film doped with impurities; and a process of melting and fluidizing said SiO₂ film doped with impurities and said moisture resistant film so as to flatten the surface thereof by applying heat treatment.
Claim 2
Dependent Claim
26 words
A method for manufacturing a semiconductor device according to Claim 1, wherein the SiO₂ film doped with impurities is a PSG film or a BPSG film.
Claim 3
Dependent Claim
44 words
A method for manufacturing a semiconductor device according to Claim 1, wherein the moisture resistant film is a SiO₂ film doped with impurities having low concentration rather than a SiO₂ film or a SiO₂ film doped with impurities which is the object of covering.
Claim 4
Dependent Claim
61 words
A method for manufacturing a semiconductor device according to Claim 1, wherein, after a SiO₂ film doped with impurities is deposited on a substrate surface having unevenness, processing is shifted to a process of depositing a next moisture resistant film in a state that the deposited film is protected against the atmosphere so that said deposited film does not absorb moisture.
Claim 5
Dependent Claim
39 words
A method for manufacturing a semiconductor device according to Claim 1, wherein the film thickness of the moisture resistant film is thinner than the film thickness of the SiO₂ film doped with impurities which is the object of covering.
Claim 6
Dependent Claim
42 words
A method for manufacturing a semiconductor device according to Claim 1, wherein the extent of unevenness on the substrate surface is reduced in advance by forming a film having self-flattening property before the process of depositing the SiO₂ film doped with impurities.
References Cited (Backward Citations)
No citation records indexed.
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