Manufacture of semiconductor device

Abstract

Abstract PURPOSE: To improve reliability basing upon an insulation film by uniforming the thickness of the insulation film by filling a groove, produced between the electrode metal film of the 1st layer and the insulation film, with a silica powder suspension by coating. CONSTITUTION: Between the 1st electrode metal film 15 and insulation film 12, groove 14" is made by overetching in process of manufacture. Next, a solution obtained by suspending silica powder with a n alcohol-base organic solvent is applied by a spinner, etc., and the organic solvent is baked. In consequence, silica film layer 18 is formed. On layer 18, the 2nd insulation film 16 of a silicon oxide film, etc., is formed by vaporphase growth. Therefore,since no abnormality occurs which might be caused by the turning around of a reaction gas flow to a small- aperture part, the insulation films are made uniform, so that reliability basing upon insulation films will never lower. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Soichiro Yamashita

Bibliographic Details