Patent US5677241A successfully refreshed from Google Patents.
US5677241A
Expired / Lapsed
US
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Integrated circuitry having a pair of adjacent conductive lines and method of forming
Assignee: Micron Technology Inc
•
Filing: 1995-12-27
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Granted: 1997-10-14
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Expires: 2015-12-27
Abstract
Abstract A method of forming integrated circuitry includes, a) providing a pair of spaced and adjacent electrically conductive elongated lines; and b) providing electrically insulative material over the pair of spaced lines in a manner which leaves an elongated void between the lines, the elongated void being top sealed along its substantial elongated length. Preferably, the electrically insulative material is provided by depositing electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end. The void at the one end is subsequently sealed. Integrated circuitry of the invention included, i) a pair of spaced and adjacent electrically conductive elongated lines; and ii) the pair of conductive lines being encapsulated with an electrically insulative material, a top sealed elongated void provided relative to the electrically insulative material between the lines facilitating electrical isolation of the lines from one another.
Inventors
- 👤 Monte Manning
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:38
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/074; H10W20/077; H10W20/40; H10W20/45; H10W20/46; H10W20/495; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
120 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective ends; forming electrically insulative material over the pair of lines in a manner which produces a retrograde profile of the insulating material relative to at least one of the respective line ends and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; removing the retrograde profile at the at least one end and replacing it with either a substantially vertical profile or a prograde profile; and after removing the retrograde profile, sealing the void at the at least one end.
Claim 2
Independent Claim
120 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective ends; forming electrically insulative material over the pair of lines in a manner which produces a retrograde profile of the insulating material relative to at least one of the respective line ends and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; removing the retrograde profile at the at least one end and replacing it with either a substantially vertical profile or a prograde profile; and after removing the retrograde profile, sealing the void at the at least one end.
Claim 3
Dependent Claim
36 words
The method of forming integrated circuitry of claim 1 wherein the step of depositing electrically insulative material leaves the elongated void open at both its ends, the method further comprising sealing both ends of the void.
Claim 4
Dependent Claim
28 words
The method of forming integrated circuitry of claim 1 wherein the lines have respective adjacent ends, the depositing step providing the void opening at the adjacent line ends.
Claim 5
Dependent Claim
18 words
The method of forming integrated circuitry of claim 1 comprising moving the void end after the depositing step.
Claim 6
Dependent Claim
39 words
The method of forming integrated circuitry of claim 1 wherein, the lines have respective adjacent ends, the depositing step providing the void opening at the adjacent line ends; and further comprising moving the void end after the depositing step.
Claim 7
Dependent Claim
80 words
The method of forming integrated circuitry of claim 1 wherein the steps of removing the retrograde profile and sealing the at least one void end comprise: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist; anisotropically etching the exposed insulating material to remove the retrograde profile of exposed insulating material at the void end opening; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 8
Dependent Claim
137 words
The method of forming integrated circuitry of claim 1 wherein the lines have respective adjacent ends, the depositing step providing the void opening at the adjacent line ends; and the steps of removing the retrograde profile and sealing the at least one void end comprising: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist, the patterned photoresist comprising an edge recessingly positioned over the lines; anisotropically etching the exposed insulating material to both, a) remove the retrograde profile of exposed insulating material at the end of the lines, and b) move the void opening from the end of the lines and provide the moved void opening with other than a retrograde profile; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 9
Dependent Claim
74 words
The method of forming integrated circuitry of claim 1 wherein the steps of removing the retrograde profile and sealing the at least one void end comprise: without using photoresist masking, anisotropically etching only partially into the insulating material to reduce or remove the retrograde profile but not sufficiently to open the top of the elongated void between the lines; and after the anisotropic partial etching step, depositing an insulating material to seal the void.
Claim 10
Dependent Claim
29 words
The method of forming integrated circuitry of claim 8 wherein the lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends.
Claim 11
Dependent Claim
90 words
The method of forming integrated circuitry of claim 1 wherein the steps of removing the retrograde profile and sealing the at least one void end comprise: without using photoresist masking, first anisotropically etching only partially into the insulating material to reduce the retrograde profile but not sufficiently to open the top of the elongated void between the lines; first depositing an insulating layer over the anisotropic partial etched insulating material; and repeating the first anisotropic etching and first depositing steps effectively to remove the retrograde profile and seal the void.
Claim 12
Dependent Claim
28 words
The method of forming integrated circuitry of claim 10 wherein lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends.
Claim 13
Dependent Claim
36 words
The method of forming integrated circuitry of claim 10 wherein the repeating step is conducted effectively to provide a prograde profile of insulating material over the lines adjacent the void opening prior to sealing the void.
Claim 14
Dependent Claim
83 words
The method of forming integrated circuitry of claim 1 wherein the steps of removing the retrograde profile and sealing the at least one void end comprise: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist; erosion etching the exposed insulating material in a manner which removes the retrograde profile of exposed insulating material at the void end opening; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 15
Dependent Claim
29 words
The method of forming integrated circuitry of claim 13 wherein the lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends.
Claim 16
Dependent Claim
18 words
The method of forming integrated circuitry of claim 13 whereto the erosion etching also erosion etches the photoresist.
Claim 17
Dependent Claim
105 words
The method of forming integrated circuitry of claim 13 wherein the lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends; and the steps of removing the retrograde profile and sealing the at least one void end comprising: providing the patterned photoresist to have an edge recessingly positioned over the lines; and conducting the erosion etching to both, a) remove the retrograde profile of exposed insulating material at the end of the lines, and b) move the void opening from the end of the lines and provide the moved void opening with other than a retrograde profile.
Claim 18
Independent Claim
75 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines; providing electrically insulative material over the pair of spaced lines in a manner which leaves an elongated void between the lines, the elongated void being top sealed along its substantial elongated length, the elongated void having an open end; after forming the elongated void, moving the open end; and sealing the moved open end.
Claim 19
Independent Claim
75 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines; providing electrically insulative material over the pair of spaced lines in a manner which leaves an elongated void between the lines, the elongated void being top sealed along its substantial elongated length, the elongated void having an open end; after forming the elongated void, moving the open end; and sealing the moved open end.
Claim 20
Independent Claim
150 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist; anisotropically etching the exposed insulating material to remove the retrograde profile of exposed insulating material at the void end opening; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 21
Independent Claim
150 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist; anisotropically etching the exposed insulating material to remove the retrograde profile of exposed insulating material at the void end opening; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 22
Independent Claim
192 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls and respective adjacent ends; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at the adjacent line ends; and sealing the void at the one end, the step of sealing the one void end comprising: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist, the patterned photoresist comprising an edge recessingly positioned over the lines; anisotropically etching the exposed insulating material to both, a) remove the retrograde profile of exposed insulating material at the end of the lines, and b) move the void opening from the end of the lines and provide the moved void opening with other than a retrograde profile; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 23
Independent Claim
192 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls and respective adjacent ends; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at the adjacent line ends; and sealing the void at the one end, the step of sealing the one void end comprising: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist, the patterned photoresist comprising an edge recessingly positioned over the lines; anisotropically etching the exposed insulating material to both, a) remove the retrograde profile of exposed insulating material at the end of the lines, and b) move the void opening from the end of the lines and provide the moved void opening with other than a retrograde profile; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 24
Independent Claim
144 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: without using photoresist masking, anisotropically etching only partially into the insulating material to reduce or remove the retrograde profile but not sufficiently to open the top of the elongated void between the lines; and after the anisotropic partial etching step, depositing an insulating material to seal the void.
Claim 25
Independent Claim
144 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: without using photoresist masking, anisotropically etching only partially into the insulating material to reduce or remove the retrograde profile but not sufficiently to open the top of the elongated void between the lines; and after the anisotropic partial etching step, depositing an insulating material to seal the void.
Claim 26
Dependent Claim
29 words
The method of forming integrated circuitry of claim 20 wherein the lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends.
Claim 27
Independent Claim
160 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: without using photoresist masking, first anisotropically etching only partially into the insulating material to reduce the retrograde profile but not sufficiently to open the top of the elongated void between the lines; first depositing an insulating layer over the anisotropic partial etched insulating material; and repeating the first anisotropic etching and first depositing steps effectively to remove the retrograde profile and seal the void.
Claim 28
Independent Claim
160 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: without using photoresist masking, first anisotropically etching only partially into the insulating material to reduce the retrograde profile but not sufficiently to open the top of the elongated void between the lines; first depositing an insulating layer over the anisotropic partial etched insulating material; and repeating the first anisotropic etching and first depositing steps effectively to remove the retrograde profile and seal the void.
Claim 29
Dependent Claim
29 words
The method of forming integrated circuitry of claim 22 wherein the lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends.
Claim 30
Dependent Claim
36 words
The method of forming integrated circuitry of claim 22 wherein the repeating step is conducted effectively to provide a prograde profile of insulating material over the lines adjacent the void opening prior to sealing the void.
Claim 31
Independent Claim
153 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist; erosion etching the exposed insulating material in a manner which removes the retrograde profile of exposed insulating material at the void end opening; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 32
Independent Claim
153 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and sealing the void at the one end, the step of sealing the one void end comprising: depositing and patterning a layer of photoresist over the insulating material to leave the void outwardly open through the photoresist; erosion etching the exposed insulating material in a manner which removes the retrograde profile of exposed insulating material at the void end opening; and after the anisotropic etching step, depositing an insulating material to seal the void.
Claim 33
Dependent Claim
29 words
The method of forming integrated circuitry of claim 25 wherein the lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends.
Claim 34
Dependent Claim
18 words
The method of forming integrated circuitry of claim 25 wherein the erosion etching also erosion etches the photoresist.
Claim 35
Dependent Claim
98 words
The method of forming integrated circuitry of claim 25 wherein the lines have respective adjacent ends, the void opening at least initially being provided at the adjacent line ends; and the step of sealing the one void end comprising: providing the patterned photoresist to have an edge recessingly positioned over the lines; and conducting the erosion etching to both, a) remove the retrograde profile of exposed insulating material at the end of the lines, and b) move the void opening from the end of the lines and provide the moved void opening with other than a retrograde profile.
Claim 36
Independent Claim
93 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and after forming the electrically insulative material, sealing the void at the one end.
Claim 37
Independent Claim
93 words
A method of forming integrated circuitry comprising the following steps: providing a pair of spaced and adjacent electrically conductive elongated lines, the lines having respective sidewalls; forming electrically insulative material over the pair of lines in a manner which produces a retrograde cross-sectional profile of the insulating material relative to the respective line sidewalls and which leaves an elongated top sealed void within the insulating material between the lines, the elongated void being open at at least one end; and after forming the electrically insulative material, sealing the void at the one end.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-13 | 2001-04-14 | 2001-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-13 | 2005-04-14 | 2005-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-13 | 2009-04-14 | 2009-10-14 | $7700.00 | Window Closed / Lapsed |