Method to provide a void between adjacent conducting lines in a semiconductor device

Claim 1

A method of building a semiconductor device, comprising the steps of: forming a layer of conductive material on a wafer; forming a layer of dielectric material on top of said conductive layer; etching said layer of dielectric material and said layer of conductive material to form a first line and a second line adjacent to said first line, each said line having a conductive section, and a dielectric section disposed upon said conductive section; and heating said wafer until said dielectric sections move toward each other forming a cavity between the conductive section of said first line and the conductive section of said second line.

Claim 2

A method of building a semiconductor device, comprising the steps of: forming a layer of conductive material on a wafer; forming a layer of dielectric material on top of said conductive layer; etching said layer of dielectric material and said layer of conductive material to form a first line and a second line adjacent to said first line, each said line having a conductive section, and a dielectric section disposed upon said conductive section; and heating said wafer until said dielectric sections move toward each other forming a cavity between the conductive section of said first line and the conductive section of said second line.

Claim 8

A method of building a semiconductor device, comprising the steps of: forming a layer of conductive material on a wafer; forming a layer of dielectric material on top of said conductive layer; etching said layer of dielectric material and said layer of conductive material to form a first line and a second line in spaced relation to said first line, said first line having a conductive section, and a dielectric section disposed upon said conductive section; and heating said wafer until said dielectric section moves toward said second line defining a cavity between the conductive section of said first line and the conductive section of said second line.

Claim 9

A method of building a semiconductor device, comprising the steps of: forming a layer of conductive material on a wafer; forming a layer of dielectric material on top of said conductive layer; etching said layer of dielectric material and said layer of conductive material to form a first line and a second line in spaced relation to said first line, said first line having a conductive section, and a dielectric section disposed upon said conductive section; and heating said wafer until said dielectric section moves toward said second line defining a cavity between the conductive section of said first line and the conductive section of said second line.

Claim 11

A method of building a semiconductor device comprising: forming a layer of conductive material on a wafer; forming a layer of photoresist upon said conductive layer; etching said layers of conductive and photoresist materials to form a first line assembly and a second line assembly, each of said first and second line assemblies having a conductive section and a photoresist section disposed thereon, each of said first and second line assemblies also having at least one sidewall, said sidewall carrying a sidewall film; and heating said wafer until said photoresist sections move laterally causing two adjacently oriented sidewall films to move toward each other and form a cavity between said conductive sections.

Claim 12

A method of building a semiconductor device comprising: forming a layer of conductive material on a wafer; forming a layer of photoresist upon said conductive layer; etching said layers of conductive and photoresist materials to form a first line assembly and a second line assembly, each of said first and second line assemblies having a conductive section and a photoresist section disposed thereon, each of said first and second line assemblies also having at least one sidewall, said sidewall carrying a sidewall film; and heating said wafer until said photoresist sections move laterally causing two adjacently oriented sidewall films to move toward each other and form a cavity between said conductive sections.

Claim 15

A method of forming a semiconductor device, comprising the steps of: providing a substrate; forming a layer of conductive material on said substrate; forming a layer of photoresist material over said conductive layer; forming a pattern of conductive material and photoresist material on said substrate, said pattern comprising a plurality of spaced conductive lines with photoresist over said lines, said patterned materials having side surfaces, defining voids between said patterned materials; forming a film on said side surfaces; heating said wafer until said photoresist changes conformity and moves a portion of said film on said side surfaces to at least partially enclose said voids between said spaced conductive lines.

Claim 16

A method of forming a semiconductor device, comprising the steps of: providing a substrate; forming a layer of conductive material on said substrate; forming a layer of photoresist material over said conductive layer; forming a pattern of conductive material and photoresist material on said substrate, said pattern comprising a plurality of spaced conductive lines with photoresist over said lines, said patterned materials having side surfaces, defining voids between said patterned materials; forming a film on said side surfaces; heating said wafer until said photoresist changes conformity and moves a portion of said film on said side surfaces to at least partially enclose said voids between said spaced conductive lines.