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US5652187A
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Method for fabricating doped interlayer-dielectric film of semiconductor device using a plasma treatment
Assignee: Samsung Electronics Co Ltd
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Filing: 1994-02-01
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Granted: 1997-07-29
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Expires: 2014-02-01
Abstract
Abstract The surface of a borophosphosilicate glass (BPSG) dielectric film undergoes a surface treatment, such as by plasma treatment with N 2 O, N 2 +NH 3 , N 2 , O 2 or O 3 . Erosion caused by H 2 SO 4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures ideally below 850° C. is possible and an interlayer dielectric film of excellent planarity is thus formed.
Inventors
- 👤 Changgyu Kim
- 👤 Changki Hong
- 👤 Uin Chung
- 👤 Yongchul Ahn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6534; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/093; H10W20/096; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
71 words
A method for fabricating an interlayer dielectric film comprising the steps of: (a) preparing a semiconductor substrate having electrical elements thereon; (b) depositing a dielectric film containing boron and phosphorous over said electrical elements and said substrate; (c) surface treating said dielectric film using a plasma source gas consisting of N 2 ; and (d) reflowing said dielectric film using a temperature below about 850° C. after performing said surface treatment.
Claim 2
Independent Claim
71 words
A method for fabricating an interlayer dielectric film comprising the steps of: (a) preparing a semiconductor substrate having electrical elements thereon; (b) depositing a dielectric film containing boron and phosphorous over said electrical elements and said substrate; (c) surface treating said dielectric film using a plasma source gas consisting of N 2 ; and (d) reflowing said dielectric film using a temperature below about 850° C. after performing said surface treatment.
Claim 3
Dependent Claim
21 words
The method according to claim 1, wherein said dielectric film contains boron at concentrations ranging from 4 to 15 wt %.
Claim 4
Dependent Claim
21 words
The method according to claim 1, wherein said dielectric film contains phosphorous at concentrations ranging from 4 to 15 wt %.
Claim 5
Dependent Claim
24 words
The method according to claim 1, further including the step of wet cleaning the surface of the dielectric film prior to said reflowing step.
Claim 6
Dependent Claim
18 words
The method according to claim 4, wherein said wet cleaning step comprises performing H 2 SO 4 boiling.
Claim 7
Dependent Claim
21 words
The method according to claim 1, wherein said step of preparing a semiconductor substrate includes forming electrical conductors on said substrate.
References Cited (Backward Citations)
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JPS6386426A
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JPH01238147A
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US5405489A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-28 | 2001-01-27 | 2001-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-28 | 2005-01-27 | 2005-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-28 | 2009-01-27 | 2009-07-29 | $7700.00 | Window Closed / Lapsed |