Chemical vapor deposition process for fabricating layered superlattice materials

Claim 1

A method of fabricating an integrated circuit including a ferroelectric layered superlattice material containing at least three different metals, said layered superlattice material having alternating ferroelectric and non-ferroelectric layers, said method comprising the steps of: providing a substrate; depositing on said substrate a film including said at least three different metals in effective amounts for yielding said layered superlattice material containing said at least three different metals, utilizing a chemical vapor deposition process; and heating said film to crystallize it into a layer of said layered superlattice material containing said at least three different metals in a phase having a higher polarizability than prior to said step of heating said layered superlattice material being less than 1 micron thick.

Claim 2

A method of fabricating an integrated circuit including a ferroelectric layered superlattice material containing at least three different metals, said layered superlattice material having alternating ferroelectric and non-ferroelectric layers, said method comprising the steps of: providing a substrate; depositing on said substrate a film including said at least three different metals in effective amounts for yielding said layered superlattice material containing said at least three different metals, utilizing a chemical vapor deposition process; and heating said film to crystallize it into a layer of said layered superlattice material containing said at least three different metals in a phase having a higher polarizability than prior to said step of heating said layered superlattice material being less than 1 micron thick.

Claim 13

A method of fabricating an integrated circuit including ferroelectric layered superlattice material containing at least three different metals, said layered superlattice material having alternative ferroelectric and non-ferroelectric layers, said method comprising the steps of: providing a substrate; depositing on said substrate a film including said at least three different metals in effective amounts for yielding said layered superlattice material containing said at least three metals, utilizing a chemical vapor deposition process; forming an electrode on said film; and annealing said film and said electrode in an oxygen furnace, to form a thin film of said ferroelectric layered superlattice material containing said at least three different metals, said ferroelectric layered superlattice material being less than one micron thick between said substrate and said electrode.

Claim 14

A method of fabricating an integrated circuit including ferroelectric layered superlattice material containing at least three different metals, said layered superlattice material having alternative ferroelectric and non-ferroelectric layers, said method comprising the steps of: providing a substrate; depositing on said substrate a film including said at least three different metals in effective amounts for yielding said layered superlattice material containing said at least three metals, utilizing a chemical vapor deposition process; forming an electrode on said film; and annealing said film and said electrode in an oxygen furnace, to form a thin film of said ferroelectric layered superlattice material containing said at least three different metals, said ferroelectric layered superlattice material being less than one micron thick between said substrate and said electrode.

Claim 16

A method of fabricating an integrated circuit including a ferroelectric layered superlattice material containing at least three different metals, said layered superlattice material having alternating ferroelectric and non-ferroelectric layers, said method comprising the steps of: providing a substrate; depositing a thin film on said substrate utilizing a chemical vapor deposition process, said thin film including said at least three different metals in effective amounts for yielding said ferroelectric layered superlattice material having the formula A1 w1 +a1 A2 w2 +a2 . . . Aj wj +aj S1 x1 +s1 S2 x2 +s2 . . . Sk xk +sk B1 y1 +b1 B2 y2 +b2 . . . Bl yl +bl Q z -2 , where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in said perovskite-like structure, Q represents an anion, the superscripts indicate valences of the respective elements, the subscripts indicate an average number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero, and wherein said A-site element comprises one or more elements from a group consisting of strontium, calcium, barium, and lead, said B-site element comprises one or more elements from a group consisting of titanium, tantalum, hafnium, tungsten, niobium zirconium, said superlattice generator element comprises one or more elements from a group consisting of bismuth, scandium, yttrium, lanthanum, antimony, chromium, and thallium, and said anion comprises an element from a group consisting of oxygen, fluorine, chlorine and hybrids thereof; and heating said thin film to crystallize it into a layer of said layered superlattice material less than 1 micron thick.

Claim 17

A method of fabricating an integrated circuit including a ferroelectric layered superlattice material containing at least three different metals, said layered superlattice material having alternating ferroelectric and non-ferroelectric layers, said method comprising the steps of: providing a substrate; depositing a thin film on said substrate utilizing a chemical vapor deposition process, said thin film including said at least three different metals in effective amounts for yielding said ferroelectric layered superlattice material having the formula A1 w1 +a1 A2 w2 +a2 . . . Aj wj +aj S1 x1 +s1 S2 x2 +s2 . . . Sk xk +sk B1 y1 +b1 B2 y2 +b2 . . . Bl yl +bl Q z -2 , where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in said perovskite-like structure, Q represents an anion, the superscripts indicate valences of the respective elements, the subscripts indicate an average number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero, and wherein said A-site element comprises one or more elements from a group consisting of strontium, calcium, barium, and lead, said B-site element comprises one or more elements from a group consisting of titanium, tantalum, hafnium, tungsten, niobium zirconium, said superlattice generator element comprises one or more elements from a group consisting of bismuth, scandium, yttrium, lanthanum, antimony, chromium, and thallium, and said anion comprises an element from a group consisting of oxygen, fluorine, chlorine and hybrids thereof; and heating said thin film to crystallize it into a layer of said layered superlattice material less than 1 micron thick.