US5043049A
Expired / Lapsed
US
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Methods of forming ferroelectric thin films
Assignee: Seiko Epson Corp
•
Filing: 1990-01-24
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Granted: 1991-08-27
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Expires: 2010-01-24
Abstract
Abstract A ferroelectric film is deposited that has desired stoichiometric composition by employing one of two methods: One method comprises depositing a ferroelectric film, e.g., PbTiO 3 , followed by ion implanting the deposited ferroelectric film with one of the constitutents or elements comprising the film, such as, Pb, Ti or O 2 . The other method comprises depositing the film by sputtering employing a sputtering gas medium or atmosphere that includes either O 3 or a gaseous form of Pb, such as Pb(C 2 H 5 ) 4 , PbCl 4 , and Pb 2 O(OH) 2 , followed by annealing.
Inventors
- 👤 Kazuhiro Takenaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:47
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/088; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1272; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/668; H10P30/00; H10P30/40
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
94 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of forming a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer, subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous, thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
Claim 2
Independent Claim
94 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of forming a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer, subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous, thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein said ferroelectric film comprises PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ).
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein said annealing step is carried out for about one hour at a temperature of about 500° C. or more.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein said step of annealing comprises thermal annealing of said ferroelectric film at a temperature in excess of 500° C. for a minute or more.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said annealing step is carried out in an atmosphere containing ozone.
Claim 7
Independent Claim
114 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds. sputtering a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer, subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous, thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
Claim 8
Independent Claim
114 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds. sputtering a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer, subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous, thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
Claim 9
Dependent Claim
26 words
The method of claim 6 wherein said ferroelectric film comprises PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ).
Claim 10
Dependent Claim
25 words
The method of claim 6 wherein said annealing step is carried out for about one hour at a temperature of about 500° C. or more.
Claim 11
Dependent Claim
30 words
The method of claim 6 wherein said step of annealing comprises thermal annealing of said ferroelectric film at a temperature in excess of 500° C. for a minute or more.
Claim 12
Dependent Claim
17 words
The method of claim 6 wherein said annealing step is carried out in an atmosphere containing ozone.
Claim 13
Independent Claim
124 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds. introducing into said system a sputtering gas medium including ozone, sputtering a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer, subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous, thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
Claim 14
Independent Claim
124 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds. introducing into said system a sputtering gas medium including ozone, sputtering a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer, subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous, thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
Claim 15
Dependent Claim
26 words
The method of claim 11 wherein said ferroelectric film comprises PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ).
Claim 16
Dependent Claim
25 words
The method of claim 11 wherein said annealing step is carried out for about one hour at a temperature of about 500° C. or more.
Claim 17
Dependent Claim
30 words
The method of claim 11 wherein said step of annealing comprises thermal annealing of said ferroelectric film at a temperature in excess of 500° C. for a minute or more.
Claim 18
Dependent Claim
17 words
The method of claim 11 wherein said annealing step is carried out in an atmosphere containing ozone.
Claim 19
Independent Claim
91 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium, sputtering a ferroelectric thin film on said substrate or supporting layer, and annealing said ferroelectric film in an atmosphere containing O 3 to achieve stoichiometric composition and to form crystalline ferroelectric material.
Claim 20
Independent Claim
91 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium, sputtering a ferroelectric thin film on said substrate or supporting layer, and annealing said ferroelectric film in an atmosphere containing O 3 to achieve stoichiometric composition and to form crystalline ferroelectric material.
Claim 21
Dependent Claim
26 words
The method of claim 16 wherein said ferroelectric film comprises PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ).
Claim 22
Dependent Claim
25 words
The method of claim 16 wherein said annealing step is carried out for about one hour at a temperature of about 500° C. or more.
Claim 23
Dependent Claim
16 words
The method of claim 16 wherein said sputtering gas medium comprises Ar and O 2 .
Claim 24
Dependent Claim
14 words
The method of claim 16 wherein said annealing atmosphere contains at least 5% ozone.
Claim 25
Independent Claim
73 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium including ozone, and sputtering a ferroelectric thin film on said substrate or supporting layer.
Claim 26
Independent Claim
73 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium including ozone, and sputtering a ferroelectric thin film on said substrate or supporting layer.
Claim 27
Dependent Claim
26 words
The method of claim 21 wherein said ferroelectric film comprises PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ).
Claim 28
Dependent Claim
13 words
The method of claim 21 including the step of annealing said ferroelectric film.
Claim 29
Dependent Claim
25 words
The method of claim 23 wherein said annealing step is carried out for about one hour at a temperature of about 500° C. or more.
Claim 30
Dependent Claim
14 words
The method of claim 21 wherein said sputtering gas medium contains about 5% ozone.
Claim 31
Dependent Claim
18 words
The method of claim 21 wherein said sputtering gas medium comprises Ar, O 2 and O 3 .
Claim 32
Dependent Claim
16 words
The method of claim 26 wherein the ratio of Ar:O 2 :O 3 is about 80:15.5.
Claim 33
Independent Claim
95 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium including a vapor medium comprising an alkyl metal organic form, a hydride form or a halide form of Pb, and sputtering a ferroelectric thin film on said substrate or supporting layer, thereafter annealing said ferroelectric film.
Claim 34
Independent Claim
95 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium including a vapor medium comprising an alkyl metal organic form, a hydride form or a halide form of Pb, and sputtering a ferroelectric thin film on said substrate or supporting layer, thereafter annealing said ferroelectric film.
Claim 35
Dependent Claim
26 words
The method of claim 28 wherein said ferroelectric film comprises PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ).
Claim 36
Dependent Claim
25 words
The method of claim 28 wherein said annealing step is carried out for about one hour at a temperature of about 500° C. or more.
Claim 37
Dependent Claim
22 words
The method of claim 28 wherein the percent of said Pb gaseous vapor in said sputtering gas medium is at least 5%.
Claim 38
Dependent Claim
26 words
The method of claim 28 wherein said sputtering gas medium contains Pb(C 2 H 5 ) 4 , PbCl 4 , Pb 2 O(OH) 2 .
Claim 39
Dependent Claim
31 words
The method of claim 28 wherein said sputtering gas medium comprises Ar, O 2 and Pb(C 2 H 5 ) 4 , PbCl 4 , or Pb 2 O(OH) 2 .
Claim 40
Dependent Claim
32 words
The method of claim 33 wherein the percentage ratio of Ar, O 2 and Pb(C 2 H 5 ) 4 , PbCl 4 , or Pb 2 O(OH) 2 is about 85%/10%/5%.
Claim 41
Independent Claim
100 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ), introducing into said system a sputtering gas medium comprising Ar, O 2 and Pb(C 2 H 5 ) 4 , PbCl 4 , or Pb 2 O(OH) 2 , and sputtering a ferroelectric thin film on said substrate or supporting layer.
Claim 42
Independent Claim
100 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of PbTiO 3 , PZT (PbTiO 3 /PbZrO 3 ), or PLZT (La/PbTiO 3 /PbZrO 3 ), introducing into said system a sputtering gas medium comprising Ar, O 2 and Pb(C 2 H 5 ) 4 , PbCl 4 , or Pb 2 O(OH) 2 , and sputtering a ferroelectric thin film on said substrate or supporting layer.
Claim 43
Dependent Claim
32 words
The method of claim 35 wherein said Pb (C 2 H 5 ) 4 , PbCl 4 , or Pb 2 O(OH) 2 is at least 5% of said sputtering gas medium.
Claim 44
Dependent Claim
32 words
The method of claim 35 wherein the percentage ratio of Ar, O 2 and Pb(C 2 H 5 ) 4 , PbCl 4 , or Pb 2 O(OH) 2 is about 85%/10%/5%.
Claim 45
Independent Claim
65 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium comprising Ar and O 2 ,
Claim 46
Independent Claim
65 words
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds, introducing into said system a sputtering gas medium comprising Ar and O 2 ,
Claim 47
Dependent Claim
55 words
sputtering a ferroelectric film on said substrate or supporting layer, and thereafter annealing said ferroelectric film to form a crystalline ferroelectric film in an atmosphere containing reactive O 3 wherein O 3 is a secondary component in said atmosphere, said annealing carried out at a temperature in the range of 500° C. to 900° C.
Claim 48
Dependent Claim
55 words
sputtering a ferroelectric film on said substrate or supporting layer, and thereafter annealing said ferroelectric film to form a crystalline ferroelectric film in an atmosphere containing reactive O 3 wherein O 3 is a secondary component in said atmosphere, said annealing carried out at a temperature in the range of 500° C. to 900° C.
Claim 49
Dependent Claim
17 words
The method of claim 38 wherein said atmosphere comprises 90% O 2 and 10% O 3 .
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