Patent US5644459A successfully refreshed from Google Patents.
US5644459A
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US
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Bipolarity electrostatic discharge protection device and method for making same
Assignee: Renesas Electronics America Inc
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Filing: 1995-11-02
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Granted: 1997-07-01
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Expires: 2015-11-02
Abstract
Abstract A circuit and method for protecting an integrated circuit during positive and negative ESD events. During both positive and negative ESD events, the circuit conducts ESD current through a turned on device. The circuit includes a pad, a voltage supply rail, a field effect transistor connected across the pad and the voltage supply rail, and an enabling circuit connected across the gate of the field effect transistor and the pad. During a positive ESD event, the field effect transistor is turned on to provide a conductive path between the pad and the voltage supply rail. During a negative ESD event, the bipolar transistor inherent in the field effect transistor is turned on to provide a conductive path between the pad and the voltage supply rail.
Inventors
- 👤 Chuen-Der Lien
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:54
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/003; H03K19/00315; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/811
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
161 words
An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit fabricated on a chip, the ESD protection circuit comprising: a pad connected to the integrated circuit to be protected; a first voltage supply rail; a first field effect transistor connected across the pad and the first voltage supply rail, wherein the first field effect transistor provides a conductive path between the pad and the first voltage supply rail by a parasitic bipolar effect when a voltage having a first polarity exists across the pad and the first voltage supply rail; and a first enabling circuit coupled between a gate of the first field effect transistor and the pad, wherein the first enabling circuit turns on the first field effect transistor when a voltage having a second polarity opposite the first polarity and exceeding a preselected voltage exists across the pad and the first voltage supply rail, thereby providing a conductive path between the pad and the first voltage supply rail.
Claim 2
Dependent Claim
161 words
An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit fabricated on a chip, the ESD protection circuit comprising: a pad connected to the integrated circuit to be protected; a first voltage supply rail; a first field effect transistor connected across the pad and the first voltage supply rail, wherein the first field effect transistor provides a conductive path between the pad and the first voltage supply rail by a parasitic bipolar effect when a voltage having a first polarity exists across the pad and the first voltage supply rail; and a first enabling circuit coupled between a gate of the first field effect transistor and the pad, wherein the first enabling circuit turns on the first field effect transistor when a voltage having a second polarity opposite the first polarity and exceeding a preselected voltage exists across the pad and the first voltage supply rail, thereby providing a conductive path between the pad and the first voltage supply rail.
Claim 3
Dependent Claim
23 words
The ESD protection circuit of claim 1, wherein the pad, first voltage supply rail and first enabling circuit are fabricated on the chip.
Claim 4
Dependent Claim
32 words
The ESD protection circuit of claim 1, wherein the first enabling circuit comprises a plurality of transistors connected in series between the pad and the gate of the first field effect transistor.
Claim 5
Dependent Claim
18 words
The ESD protection circuit of claim 3, wherein each of the plurality of transistors includes a gate-to-drain connection.
Claim 6
Dependent Claim
80 words
The ESD protection device of claim 3, wherein the gate of the first field effect transistor has a first length, wherein the first enabling circuit further comprises: a second field effect transistor connected across the gate of the first field effect transistor and the pad, the second field effect transistor having a gate coupled to the first voltage supply rail, wherein the gate of the second field effect transistor has a second length which is less than the first length.
Claim 7
Dependent Claim
113 words
The ESD protection circuit of claim 3, wherein the gate of the first field effect transistor has a first length, wherein the first enabling circuit comprises: a logic circuit; and a second field effect transistor connected across the gate of the first field effect transistor and the pad, the second field effect transistor having a gate coupled to the logic circuit, wherein the gate of the second field effect transistor has a second length which is less than the first length, and wherein the logic circuit provides a signal to the gate of the second field effect transistor which turns on the second field effect transistor during normal operation of the integrated circuit.
Claim 8
Dependent Claim
159 words
The ESD protection circuit of claim 3, wherein the gate of the first field effect transistor has a first length, wherein the first enabling circuit comprises: a first logic circuit connected to the gate of the first field effect transistor; a second logic circuit; and a second field effect transistor connected across the gate of the first field effect transistor and the pad, the second field effect transistor having a gate coupled to the second logic circuit, wherein the gate of the second field effect transistor has a second length which is less than the first length, and wherein during normal operation of the integrated circuit the second logic circuit provides a signal to the gate of the second field effect transistor which turns off the second field effect transistor and the first logic circuit provides a signal to the gate of the first field effect transistor which causes the first field effect transistor to turn on and off.
Claim 9
Dependent Claim
50 words
The ESD protection circuit of claim 3, further comprising: a second voltage supply rail; and a second field effect transistor connected across the gate of the first field effect transistor and the second voltage supply rail, the second field effect transistor having a gate connected to the first supply rail.
Claim 10
Dependent Claim
71 words
The ESD protection circuit of claim 3, further comprising: a second voltage supply rail; a logic circuit; and a second field effect transistor connected across the gate of the first field effect transistor and the second voltage supply rail, the second field effect transistor having a gate connected to the logic circuit, wherein during normal operating conditions, the logic circuit provides a signal which turns on the second field effect transistor.
Claim 11
Dependent Claim
102 words
The ESD protection circuit of claim 3, further comprising: a second voltage supply rail; a first logic circuit connected to the gate of the first field effect transistor; a second logic circuit; and a second field effect transistor connected across the gate of the first field effect transistor and the second voltage supply rail, the second field effect transistor having a gate connected to the logic circuit, wherein during normal operating conditions, the second logic circuit provides a signal which turns off the second field effect transistor and the first logic circuit provides a signal to control the first field effect transistor.
Claim 12
Dependent Claim
22 words
The ESD protection circuit of claim 1, further comprising a logic circuit coupled to the gate of the first field effect transistor.
Claim 13
Dependent Claim
34 words
The ESD protection circuit of claim 11, wherein the logic circuit provides a signal having a first state to the gate of the first field effect transistor during normal operation of the integrated circuit.
Claim 14
Dependent Claim
40 words
The ESD protection circuit of claim 11, wherein the logic circuit provides a signal having a both a first state and a second state to the gate of the first field effect transistor during normal operation of the integrated circuit.
Claim 15
Dependent Claim
79 words
The ESD protection circuit of claim 1, wherein the gate of the first field effect transistor has a first length, wherein the first enabling circuit comprises: a second field effect transistor connected across the gate of the first field effect transistor and the pad, the second field effect transistor having a gate coupled to the first voltage supply rail, wherein the gate of the second field effect transistor has a second length which is less than the first length.
Claim 16
Dependent Claim
113 words
The ESD protection circuit of claim 1, wherein the gate of the first field effect transistor has a first length, wherein the first enabling circuit comprises: a logic circuit; and a second field effect transistor connected across the gate of the first field effect transistor and the pad, the second field effect transistor having a gate coupled to the logic circuit, wherein the gate of the second field effect transistor has a second length which is less than the first length, and wherein the logic circuit provides a signal to the gate of the second field effect transistor which turns on the second field effect transistor during normal operation of the integrated circuit.
Claim 17
Dependent Claim
145 words
The ESD protection circuit of claim 1, wherein the gate of the first field effect transistor has a first length, wherein the first enabling circuit comprises: a first logic circuit connected to the gate of the first field effect transistor; a second logic circuit; and a second field effect transistor connected across the gate of the first field effect transistor and the pad, the second field effect transistor having a gate coupled to the second logic circuit, wherein the gate of the second field effect transistor has a second length which is less than the first length, and wherein during normal operation of the integrated circuit the second logic circuit provides a signal to the gate of the second field effect transistor which turns on the second field effect transistor and the first logic circuit provides a signal to control the first field effect transistor.
Claim 18
Dependent Claim
140 words
The ESD protection circuit of claim 1, further comprising: a second voltage supply rail; a second field effect transistor connected across the pad and the second voltage supply rail, wherein the second field effect transistor provides a conductive path between the pad and the second voltage supply rail by a parasitic bipolar effect when a voltage having a first polarity exists across the pad and the second voltage supply rail; and a second enabling circuit coupled between a gate of the second field effect transistor and the pad, wherein the second enabling circuit turns on the second field effect transistor when a voltage having a second polarity opposite the first polarity and exceeding the preselected voltage exists across the pad and the second voltage supply rail, thereby providing a conductive path between the pad and the second voltage supply rail.
Claim 19
Dependent Claim
147 words
An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit fabricated on a chip, the ESD protection circuit comprising: a pad connected to the integrated circuit to be protected; a first voltage supply rail; semiconductor means coupling the pad and the first voltage supply rail, the semiconductor means providing a conductive path between the pad and the first voltage supply rail by a parasitic bipolar effect when an ESD voltage having a first polarity exists across the pad and the first voltage supply rail; and enabling means coupling a control terminal of the semiconductor means and the pad, the enabling means turning on the semiconductor means to provide a conductive path between the pad and the first voltage supply rail when a voltage having a second polarity opposite the first polarity and exceeding a preselected voltage exists across the pad and the first voltage supply rail.
Claim 20
Dependent Claim
147 words
An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit fabricated on a chip, the ESD protection circuit comprising: a pad connected to the integrated circuit to be protected; a first voltage supply rail; semiconductor means coupling the pad and the first voltage supply rail, the semiconductor means providing a conductive path between the pad and the first voltage supply rail by a parasitic bipolar effect when an ESD voltage having a first polarity exists across the pad and the first voltage supply rail; and enabling means coupling a control terminal of the semiconductor means and the pad, the enabling means turning on the semiconductor means to provide a conductive path between the pad and the first voltage supply rail when a voltage having a second polarity opposite the first polarity and exceeding a preselected voltage exists across the pad and the first voltage supply rail.
Claim 21
Independent Claim
84 words
A method of protecting an integrated circuit when an electrostatic discharge (ESD) voltage is applied across a pad and a voltage supply rail of the integrated circuit, the method comprising the steps of: routing current through a field effect transistor by parasitic bipolar effect when the ESD voltage has a first polarity; and turning on the field effect transistor to route current through the field effect transistor when the ESD voltage has a second polarity opposite the first polarity and exceeds a preselected voltage.
Claim 22
Independent Claim
84 words
A method of protecting an integrated circuit when an electrostatic discharge (ESD) voltage is applied across a pad and a voltage supply rail of the integrated circuit, the method comprising the steps of: routing current through a field effect transistor by parasitic bipolar effect when the ESD voltage has a first polarity; and turning on the field effect transistor to route current through the field effect transistor when the ESD voltage has a second polarity opposite the first polarity and exceeds a preselected voltage.
References Cited (Backward Citations)
US4424544A
Cited
US4484244A
Cited
US4689711A
Cited
US4750078A
Cited
US5200876A
Cited
US4930036A
Cited
US5212618A
Cited
US5086365A
Cited
US5272363A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-30 | 2000-12-30 | 2001-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-30 | 2004-12-30 | 2005-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-30 | 2008-12-30 | 2009-07-01 | $7700.00 | Window Closed / Lapsed |