US5086365A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electostatic discharge protection circuit
Assignee: Renesas Electronics America Inc
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Filing: 1990-05-08
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Granted: 1992-02-04
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Expires: 2010-05-08
Abstract
Abstract For electrostatic-discharge-protection, a first transistor is configured with the transistor channel connected between circuit ground and an associated (input or output) pad. In addition, transistors(s) are included configured to "float" the gate and/or the well of the first transistor when no power supply potential (Vcc) is present and to couple to circuit ground (or the power supply potential) the gate and/or the well of the first transistor when the normal power supply potential (Vcc) is present.
Inventors
- 👤 Cheun-Der Lien
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:38
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/811
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
86 words
An electrostatic-discharge-protection circuit (430) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (450); an integrated circuit power supply line (454); a first N-channel-type metal-oxide-semiconductor transistor (440) having a transistor gate connected to circuit ground, a transistor well, and a transistor channel coupled between circuit ground and said pad (450); and a second N-channel-type metal-oxide-semiconductor transistor (444) having a transistor gate connected to said line (454) and a transistor channel connected between circuit ground and said first transistor (440) well.
Claim 2
Dependent Claim
86 words
An electrostatic-discharge-protection circuit (430) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (450); an integrated circuit power supply line (454); a first N-channel-type metal-oxide-semiconductor transistor (440) having a transistor gate connected to circuit ground, a transistor well, and a transistor channel coupled between circuit ground and said pad (450); and a second N-channel-type metal-oxide-semiconductor transistor (444) having a transistor gate connected to said line (454) and a transistor channel connected between circuit ground and said first transistor (440) well.
Claim 3
Dependent Claim
120 words
An electrostatic-discharge-protection circuit (460) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (480); an integrated circuit power supply line (484); a first N-channel-type metal-oxide-semiconductor transistor (470) having a transistor gate, a transistor well, and a transistor channel including a first end connected to circuit ground and a second end coupled to said pad (480); a second N-channel-type metal-oxide-semiconductor transistor (472) having a transistor gate connected to said line (484) and a transistor channel connected between circuit ground and said first transistor (470) gate; and a third N-channel-type metal-oxide-semiconductor transistor (474) having a transistor gate connected to said line (484) and a transistor channel connected between circuit ground and said first transistor (470) well.
Claim 4
Dependent Claim
120 words
An electrostatic-discharge-protection circuit (460) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (480); an integrated circuit power supply line (484); a first N-channel-type metal-oxide-semiconductor transistor (470) having a transistor gate, a transistor well, and a transistor channel including a first end connected to circuit ground and a second end coupled to said pad (480); a second N-channel-type metal-oxide-semiconductor transistor (472) having a transistor gate connected to said line (484) and a transistor channel connected between circuit ground and said first transistor (470) gate; and a third N-channel-type metal-oxide-semiconductor transistor (474) having a transistor gate connected to said line (484) and a transistor channel connected between circuit ground and said first transistor (470) well.
Claim 5
Dependent Claim
32 words
An electrostatic-discharge-protection circuit (460) as recited in claim 2 wherein said first transistor (470) further has a capacitor (482) connected between said first transistor channel second end and said first transistor gate.
Claim 6
Dependent Claim
113 words
An electrostatic-discharge-protection circuit (500) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (520); an integrated circuit power supply line (516); a first P-channel-type metal-oxide-semiconductor transistor (510) having a transistor gate, a transistor well connected to line line (516), a transistor channel including a first end connected to said line (516) and a second end coupled to said pad (520), and a capacitor (522) connected between said first transistor channel second end and said first transistor gate; and a second P-channel-type metal-oxide-semiconductor transistor (512) having a transistor gate connected to circuit ground and a transistor channel connected between said line (516) and said first transistor (510) gate.
Claim 7
Dependent Claim
113 words
An electrostatic-discharge-protection circuit (500) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (520); an integrated circuit power supply line (516); a first P-channel-type metal-oxide-semiconductor transistor (510) having a transistor gate, a transistor well connected to line line (516), a transistor channel including a first end connected to said line (516) and a second end coupled to said pad (520), and a capacitor (522) connected between said first transistor channel second end and said first transistor gate; and a second P-channel-type metal-oxide-semiconductor transistor (512) having a transistor gate connected to circuit ground and a transistor channel connected between said line (516) and said first transistor (510) gate.
Claim 8
Dependent Claim
88 words
An electrostatic-discharge-protection circuit (530) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (550); an integrated circuit power supply line (546); a first P-channel-type metal-oxide-semiconductor transistor (540) having a transistor gate connected to line line (546), a transistor well, and a transistor channel coupled between said line (546) and said pad (550); and a second P-channel-type metal-oxide-semiconductor transistor (544) having a transistor gate connected to circuit ground and a transistor channel connected between said line (546) and said first transistor (540) well.
Claim 9
Dependent Claim
88 words
An electrostatic-discharge-protection circuit (530) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (550); an integrated circuit power supply line (546); a first P-channel-type metal-oxide-semiconductor transistor (540) having a transistor gate connected to line line (546), a transistor well, and a transistor channel coupled between said line (546) and said pad (550); and a second P-channel-type metal-oxide-semiconductor transistor (544) having a transistor gate connected to circuit ground and a transistor channel connected between said line (546) and said first transistor (540) well.
Claim 10
Dependent Claim
121 words
An electrostatic-discharge-protection circuit (560) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (580); an integrated circuit power supply line (576); a first P-channel-type metal-oxide-semiconductor transistor (570) having a transistor gate, a transistor well, and a transistor channel having a first end connected to said line (576) and a second end coupled to said pad (580); a second P-channel-type metal-oxide-semiconductor transistor (572) having a transistor gate connected to circuit ground and a transistor channel connected between said line (576) and said first transistor (570) gate; and a third P-channel-type metal-oxide-semiconductor transistor (574) having a transistor gate connected to circuit ground and a transistor channel connected between said line (576) and said first transistor (570) well.
Claim 11
Dependent Claim
121 words
An electrostatic-discharge-protection circuit (560) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (580); an integrated circuit power supply line (576); a first P-channel-type metal-oxide-semiconductor transistor (570) having a transistor gate, a transistor well, and a transistor channel having a first end connected to said line (576) and a second end coupled to said pad (580); a second P-channel-type metal-oxide-semiconductor transistor (572) having a transistor gate connected to circuit ground and a transistor channel connected between said line (576) and said first transistor (570) gate; and a third P-channel-type metal-oxide-semiconductor transistor (574) having a transistor gate connected to circuit ground and a transistor channel connected between said line (576) and said first transistor (570) well.
Claim 12
Dependent Claim
32 words
An electrostatic-discharge-protection circuit (560) as recited in claim 6 wherein said first transistor (570) further has a capacitor (582) connected between said first transistor channel second end and said first transistor gate.
Claim 13
Dependent Claim
82 words
An electrostatic-discharge-protection circuit (600) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (620); an integrated circuit power supply line (624); a first NPN-type bipolar transistor (610) having a transistor emitter connected to circuit ground, a transistor collector coupled to said pad (620), and a base; and a second N-channel-type metal-oxide-semiconductor transistor (612) having a transistor gate connected to said line (624) and a transistor channel connected between circuit ground and said first transistor (610) base.
Claim 14
Dependent Claim
82 words
An electrostatic-discharge-protection circuit (600) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (620); an integrated circuit power supply line (624); a first NPN-type bipolar transistor (610) having a transistor emitter connected to circuit ground, a transistor collector coupled to said pad (620), and a base; and a second N-channel-type metal-oxide-semiconductor transistor (612) having a transistor gate connected to said line (624) and a transistor channel connected between circuit ground and said first transistor (610) base.
Claim 15
Dependent Claim
83 words
An electrostatic-discharge-protection circuit (700) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (720); an integrated circuit power supply line (716); a first PNP-type bipolar transistor (710) having a transistor emitter connected to said line (716), a transistor collector coupled to said pad (720), and a base; and a second P-channel-type metal-oxide-semiconductor transistor (712) having a transistor gate connected to circuit ground and a transistor channel connected between said line (716) and said first transistor (710) gate.
Claim 16
Dependent Claim
83 words
An electrostatic-discharge-protection circuit (700) for protecting an integrated circuit, the protection circuit comprising in combination: an integrated circuit pad (720); an integrated circuit power supply line (716); a first PNP-type bipolar transistor (710) having a transistor emitter connected to said line (716), a transistor collector coupled to said pad (720), and a base; and a second P-channel-type metal-oxide-semiconductor transistor (712) having a transistor gate connected to circuit ground and a transistor channel connected between said line (716) and said first transistor (710) gate.
References Cited (Backward Citations)
US3746946A
Cited
US4385337A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-03 | 1995-08-05 | 1996-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-03 | 1999-08-05 | 2000-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-03 | 2003-08-05 | 2004-02-04 | $7700.00 | Window Closed / Lapsed |