US5639688A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making integrated circuit structure with narrow line widths
Assignee: Intersil Americas LLC
•
Filing: 1993-05-21
•
Granted: 1997-06-17
•
Expires: 2013-05-21
Abstract
Abstract In a sub-micron line width process, a first layer of polysilicon 13 is patterned into lines 1,2 spaced a predetermined distance. An oxide layer 11 is deposited. A second layer of polysilicon 14 is deposited on the insulating layer. A gate contact 19 or emitter contact 35 is formed from the second polysilicon layer 14. The gate 19 or emitter 35 is spaced from the lines 1,2 a distance approximately equal to the thickness of the second polysilicon layer 14.
Inventors
- 👤 Jose Avelino Delgado
- 👤 Stephen Joseph Gaul
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:57
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0273; H10D30/0223; H10D30/0227; H10D30/051; H10D30/0512; H10D30/60; H10D30/601; H10D30/80; H10D30/83; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/328; H10D62/343; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10P; H10P50/00; H10P50/71; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
191 words
A method for producing one or more lines of narrow width on a substrate comprising the steps of: providing a substrate of semiconductor material; depositing a first layer of conductive material of a first thickness on and contacting said semiconductor material; removing a portion of said first layer to establish first and second lines of said first conductive material, said lines adjacent each other and spaced a first distance apart to define a first region between the first and second lines horizontally and between the semiconductor substrate and upper surfaces of the first and second lines vertically has been inserted; covering the first and second lines with insulating material; providing a second layer of conductive material of a second thickness over the resulting structure of first and second lines of conductive material and insulating material; selectively removing portions of the second layer of conductive material to form a third line of conductive material disposed between said first and second lines of conductive material, in the first region, and spaced from each of said first and second lines a distance equal to or greater than the second thickness of the second layer.
Claim 2
Independent Claim
191 words
A method for producing one or more lines of narrow width on a substrate comprising the steps of: providing a substrate of semiconductor material; depositing a first layer of conductive material of a first thickness on and contacting said semiconductor material; removing a portion of said first layer to establish first and second lines of said first conductive material, said lines adjacent each other and spaced a first distance apart to define a first region between the first and second lines horizontally and between the semiconductor substrate and upper surfaces of the first and second lines vertically has been inserted; covering the first and second lines with insulating material; providing a second layer of conductive material of a second thickness over the resulting structure of first and second lines of conductive material and insulating material; selectively removing portions of the second layer of conductive material to form a third line of conductive material disposed between said first and second lines of conductive material, in the first region, and spaced from each of said first and second lines a distance equal to or greater than the second thickness of the second layer.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein the two lines of the first conductive layer are spaced more than one micron apart and the thickness of the second conductive layer is less than one micron.
Claim 4
Dependent Claim
47 words
The method of claim 1 further comprising the steps of providing a masking layer of a width in said region between the lines of first conductive material; etching the second layer of conductive material beneath the masking layer to selectively remove portions of said second conductive layer.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the substrate comprises silicon and the insulating layer comprises silicon dioxide.
Claim 6
Dependent Claim
15 words
The method of claim 4 wherein the silicon dioxide layer is a thermal oxidation layer.
Claim 7
Dependent Claim
11 words
The method of claim 1 wherein the conductive layers comprise polysilicon.
Claim 8
Dependent Claim
11 words
The method of claim 1 wherein the masking layer comprises photoresist.
Claim 9
Dependent Claim
11 words
The method of claim 3 wherein the masking layer comprises spin-on-glass.
Claim 10
Independent Claim
192 words
A method for providing narrow conductive lines on a semiconductive substrate comprising; providing a substrate of silicon; depositing a first layer of polysilicon of a first thickness contacting said silicon substrate; etching the first layer of polysilicon to expose regions of the substrate and to define raised sidewalls of polysilicon that are spaced apart a first distance, to provide a contoured surface and define a first region between the first and second lines horizontally and between the semiconductor substrate and upper surfaces of the first and second lines vertically; covering the polysilicon with silicon dioxide to form a contoured surface; depositing a second layer of polysilicon of a second thickness and conforming to contours of the contoured surface; patterning said second layer of polysilicon to define a structure of second layer polysilicon having a pair of sidewalls with each sidewall of said structure adjacent a sidewall of said first layer of polysilicon and spaced from said sidewall of said first layer a distance equal to or greater than the second thickness of the second layer, with at least a portion of the structure of second layer polysilicon located in the first region.
Claim 11
Independent Claim
192 words
A method for providing narrow conductive lines on a semiconductive substrate comprising; providing a substrate of silicon; depositing a first layer of polysilicon of a first thickness contacting said silicon substrate; etching the first layer of polysilicon to expose regions of the substrate and to define raised sidewalls of polysilicon that are spaced apart a first distance, to provide a contoured surface and define a first region between the first and second lines horizontally and between the semiconductor substrate and upper surfaces of the first and second lines vertically; covering the polysilicon with silicon dioxide to form a contoured surface; depositing a second layer of polysilicon of a second thickness and conforming to contours of the contoured surface; patterning said second layer of polysilicon to define a structure of second layer polysilicon having a pair of sidewalls with each sidewall of said structure adjacent a sidewall of said first layer of polysilicon and spaced from said sidewall of said first layer a distance equal to or greater than the second thickness of the second layer, with at least a portion of the structure of second layer polysilicon located in the first region.
Claim 12
Dependent Claim
35 words
The method of claim 9 wherein the raised sidewalls of the first polysilicon layer are spaced more than one micron apart and the thickness of the second layer of polysilicon is less than one micron.
Claim 13
Dependent Claim
31 words
The method of claim 9 further comprising the steps of providing a masking layer between the sidewalls of the second layer of polysilicon and removing unmasked portions of the second layer.
Claim 14
Dependent Claim
11 words
The method of claim 11 wherein the masking layer comprises photoresist.
Claim 15
Dependent Claim
17 words
The method of claim 9 wherein portions of the second layer of polysilicon are removed by etching.
Claim 16
Dependent Claim
16 words
The method of claim 13 wherein the step of etching is accomplished by plasma etch back.
Claim 17
Dependent Claim
13 words
The method of claim 11 wherein the masking layer is formed with spin-on-glass.
Claim 18
Independent Claim
106 words
A method for producing semiconductor devices having structural features with narrow widths comprising: providing a substrate of semiconductor material; depositing a first layer of conductive material over and contacting said semiconductor material; removing a portion of said first layer in order to define a first region of a width bounded on opposite ends by adjacent sidewalls of the first layer; forming a line of conductive material between said adjacent sidewalls of said first layer and in said first region, said line having a second thickness and spaced from each adjacent sidewall of the first layer by a distance equal to or greater than said second thickness.
Claim 19
Independent Claim
106 words
A method for producing semiconductor devices having structural features with narrow widths comprising: providing a substrate of semiconductor material; depositing a first layer of conductive material over and contacting said semiconductor material; removing a portion of said first layer in order to define a first region of a width bounded on opposite ends by adjacent sidewalls of the first layer; forming a line of conductive material between said adjacent sidewalls of said first layer and in said first region, said line having a second thickness and spaced from each adjacent sidewall of the first layer by a distance equal to or greater than said second thickness.
Claim 20
Dependent Claim
23 words
The method of claim 16 further comprising the step of providing at least one insulating layer between the first layer and the line.
Claim 21
Dependent Claim
16 words
The method of claim 17 wherein one of said insulating layers is a gate oxide layer.
Claim 22
Dependent Claim
27 words
The method of claim 17 wherein one of said insulating layers is a sidewall spacer layer deposited on said adjacent side walls of said first conductive layer.
Claim 23
Dependent Claim
28 words
The method of claim 1 further comprising the step of removing the insulating material from the surface of the substrate before providing the second layer of conductive material.
Claim 24
Dependent Claim
46 words
The method of claim 1 wherein the resulting structure has surfaces parallel to the substrate and surfaces transverse to the substrate and the insulating material is thicker on the surfaces parallel to the substrate than is the insulating material on the surfaces transverse to the substrate.
Claim 25
Dependent Claim
27 words
The method of claim 9 further comprising the step of removing the silicon dioxide from the surface of the substrate before depositing the second layer of polysilicon.
Claim 26
Dependent Claim
30 words
The method of claim 9 wherein the silicon dioxide covering the sidewall of the first layer of polysilicon is thinner than the silicon dioxide covering the rest of the polysilicon.
Claim 27
Dependent Claim
37 words
The method of claim 16 further comprising the step of covering the resulting structure with insulating material and removing the insulating material from the portions of the substrate not covered by the first layer of conductive material.
Claim 28
Dependent Claim
53 words
The method of claim 24 wherein the resulting structure of the first layer of conductive material has surfaces parallel to the substrate and surfaces transverse to the substrate and the insulating material is thicker on the surfaces parallel to the substrate than is the insulating material on the surfaces transverse to the substrate.
References Cited (Backward Citations)
JPS5629342A
Cited
JPS62211950A
Cited
US4946550A
Cited
US4970177A
Cited
JPH02219271A
Cited
JPH0334462A
Cited
US5242846A
Cited
US5049515A
Cited
US5196373A
Cited
US5137837A
Cited
JPH04299838A
Cited
US5407532A
Cited
US5272117A
Cited
US5378646A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-16 | 2000-12-16 | 2001-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-16 | 2004-12-16 | 2005-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-16 | 2008-12-16 | 2009-06-17 | $7700.00 | Window Closed / Lapsed |