Field effect semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a highly reliable field effect semiconductor device resistant against hot carrier phenomenon by a method wherein a plurality of different layers are provided on a gate electrode and a gate insulation film and under the gate insulation film while a semi- insulation film is provided on the side of the gate insulation film and a semiconductor layer is provided under the semi-insulation film. CONSTITUTION:A silicon nitride film Si3N4 is formed on a substrate 1 by using a monocrystalline silicon semiconductor by a low pressure CVD method while the entire substrate is subjected to oxidation to form a separation region 2 of an element periphery of the semiconductor device and the silicon nitride film is etched to be removed to be in state A. Silicon nitride is formed on this substrate by a plasma CVD method and further the upper surface of this semi-insulation film 5 is to be a gate insulation film 6 of the silicon oxide film by photo-CVD method. This gate insulation film is etched by using a second mask and then a polycrystalline silicon coating is formed on the upper surface. Then, a third mask is used to remove the polycrystalline silicon coating and the gate insulation film to form the gate insulation film, a gate electrode 7, a source and a drain electrode 4. Then ion implantation method is adopted to form a source and a drain regions 3 decrease resistance of the gate electrode 7 and the source and drain regions 4.

Inventors

• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details