US4970177A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-level semiconductor structure and process of fabricating thereof
Assignee: NEC Electronics Corp
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Filing: 1989-12-21
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Granted: 1990-11-13
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Expires: 2009-12-21
Abstract
Abstract A multi-level semiconductor structure forming a part of a semiconductor device has a narrow wiring strip and a wide wiring strip formed on a lower insulating film, an inter-level insulating film structure covering the narrow and wide wiring strips, an upper insulating film provided on the inter-level insulating film structure and upper metal wiring strips formed on the upper insulating film and contacting respective contact areas of the narrow and wide wiring strips through contact holes formed through the upper insulating film as well as the inter-level insulating film structure, respectively, and the inter-level insulating structure consists of a first film deposited on the entire surface and a second film filling a gap between adjacent lower wiring strips for creating a smooth topography; the second film tends to be left on the wide wiring strip after an etch-back stage and is causative of erosion of the metal wiring strip, so that a plurality of moats are formed in the wide wiring strip for surrounding the contact area, thereby forming a narrow portion where no residual second film is left.
Inventors
- 👤 Kazuyuki Mizushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:09
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10W20/40; H10W20/41; H10W20/435
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
192 words
A process of fabricating a multi-level semiconductor structure, comprising the steps of: (a) preparing a lower insulating film; (b) depositing a lower conductive film on said lower insulating film; (c) patterning said lower conductive film for forming a plurality of lower wiring strips including a narrow wiring strip and a wide wiring strip, a plurality of moats being simultaneously formed in said wide wiring strip for partially surrounding a contact area; (d) depositing a first insulating film on the entire surface; (e) coating said first insulating film with a second insulating film for creating a flat top surface; (f) uniformly removing said second insulating film for exposing said first insulating film on respective contact areas of said narrow and wide wiring strips; (g) depositing an upper insulating film on the entire surface; (h) forming contact holes in said upper and first insulating films for exposing the contact areas of said narrow and wide wiring strips; (i) depositing a metal on the entire surface, said metal filling said contact holes; and (j) patterning said metal for forming upper metal wiring strips respectively contacting the contact areas of said narrow and wide wiring strips.
Claim 2
Dependent Claim
192 words
A process of fabricating a multi-level semiconductor structure, comprising the steps of: (a) preparing a lower insulating film; (b) depositing a lower conductive film on said lower insulating film; (c) patterning said lower conductive film for forming a plurality of lower wiring strips including a narrow wiring strip and a wide wiring strip, a plurality of moats being simultaneously formed in said wide wiring strip for partially surrounding a contact area; (d) depositing a first insulating film on the entire surface; (e) coating said first insulating film with a second insulating film for creating a flat top surface; (f) uniformly removing said second insulating film for exposing said first insulating film on respective contact areas of said narrow and wide wiring strips; (g) depositing an upper insulating film on the entire surface; (h) forming contact holes in said upper and first insulating films for exposing the contact areas of said narrow and wide wiring strips; (i) depositing a metal on the entire surface, said metal filling said contact holes; and (j) patterning said metal for forming upper metal wiring strips respectively contacting the contact areas of said narrow and wide wiring strips.
Claim 3
Dependent Claim
58 words
A process of fabricating a multi-level semiconductor structure as set forth in claim 1, said plural moats consist of first and second moats having respective straight portions located on both sides of said contact area and extending in parallel to each other and respective projecting portions projecting from ends of the straight portions and confronted with one another.
Claim 4
Dependent Claim
32 words
A process of fabricating a multi-level semiconductor structure as set forth in claim 2, in which each of said moats has a width ranging from about 2.0 microns to about 3.0 microns.
Claim 5
Dependent Claim
39 words
A process of fabricating a multi-level semiconductor structure as set forth in claim 3, in which the contact area of said wide wiring strip has a plurality of contact sub-areas each partially surrounded by some of said plural moats.
Claim 6
Dependent Claim
25 words
A process of fabricating a multi-level semiconductor structure as set forth in claim 4, in which said contact sub-areas are arranged in rows and columns.
Claim 7
Dependent Claim
26 words
A process of fabricating a multi-level semiconductor structure as set forth in claim 1, in which said step (f) is achieved by using an etch-back technique.
Claim 8
Dependent Claim
25 words
A process of fabricating a milti-level semiconductor structure as set forth in claim 6, in which said etch-back technique is of a reactive ion etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-12 | 1994-05-14 | 1994-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-12 | 1998-05-14 | 1998-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-12 | 2002-05-14 | 2002-11-13 | $7700.00 | Window Closed / Lapsed |