Method of manufacturing an image display device with reduced cell gap variation

Claim 1

A method of manufacturing an image display device, comprising the steps of: preparing a first substrate comprising a first substrate base and a second substrate base, said first substrate base prepared by forming a porous layer by anodizing single crystal silicon, forming an epitaxial layer of single crystal silicon on said porous layer, and forming a silicon oxide film on said epitaxial layer; preparing said second substrate base by forming on single crystal silicon a nitrogen-containing silicon film and then by forming a silicon oxide film on said nitrogen-containing silicon film; opposing said silicon oxide films of said first and second substrate bases and then heat coupling said first and second substrate bases to each other; removing at least said porous layer of said first substrate base; removing a portion of said epitaxial layer of said first base; forming a transistor in a remaining portion of said epitaxial layer; removing the single crystal silicon on said second substrate base; forming an opening in said silicon film containing nitrogen and said silicon oxide films of said second substrate base; providing an interconnection electrically connecting said transistor in at least said opening; forming on said nitrogen-containing silicon film an electrode layer electrically connected to said interconnection; forming an insulating layer on said electrode layer; preparing a second substrate having an electrode; orienting said first and second substrates such that the electrode on said second substrate is opposed to said electrode layer; and providing a liquid crystal layer between said first and second substrates.

Claim 2

A method of manufacturing an image display device, comprising the steps of: preparing a first substrate comprising a first substrate base and a second substrate base, said first substrate base prepared by forming a porous layer by anodizing single crystal silicon, forming an epitaxial layer of single crystal silicon on said porous layer, and forming a silicon oxide film on said epitaxial layer; preparing said second substrate base by forming on single crystal silicon a nitrogen-containing silicon film and then by forming a silicon oxide film on said nitrogen-containing silicon film; opposing said silicon oxide films of said first and second substrate bases and then heat coupling said first and second substrate bases to each other; removing at least said porous layer of said first substrate base; removing a portion of said epitaxial layer of said first base; forming a transistor in a remaining portion of said epitaxial layer; removing the single crystal silicon on said second substrate base; forming an opening in said silicon film containing nitrogen and said silicon oxide films of said second substrate base; providing an interconnection electrically connecting said transistor in at least said opening; forming on said nitrogen-containing silicon film an electrode layer electrically connected to said interconnection; forming an insulating layer on said electrode layer; preparing a second substrate having an electrode; orienting said first and second substrates such that the electrode on said second substrate is opposed to said electrode layer; and providing a liquid crystal layer between said first and second substrates.