US5258322A
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Method of producing semiconductor substrate
Assignee: Canon Inc
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Filing: 1992-01-14
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Granted: 1993-11-02
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Expires: 2012-01-14
Abstract
Abstract A method of producing a semiconductor substrate, which comprises forming a monocrystalline silicon layer on a porous silicon substrate by epitaxial growth and applying an oxidation treatment to the porous silicon substrate and the monocrystalline silicon layer at least near the interface between the porous silicon substrate and the monocrystalline silicon layer.
Inventors
- 👤 Kiyofumi Sakaguchi
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:07
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/12; H10P90/15; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/116; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
53 words
A method of producing a semiconductor substrate, which comprises forming a monocrystalline silicon layer on a porous silicon substrate by epitaxial growth and applying an oxidation treatment to the porous silicon substrate and the part of the monocrystalline silicon layer adjacent the interface between the porous silicon substrate and the monocrystalline silicon layer.
Claim 2
Independent Claim
53 words
A method of producing a semiconductor substrate, which comprises forming a monocrystalline silicon layer on a porous silicon substrate by epitaxial growth and applying an oxidation treatment to the porous silicon substrate and the part of the monocrystalline silicon layer adjacent the interface between the porous silicon substrate and the monocrystalline silicon layer.
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein the silicon substrate is of p-type or n-type.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein the monocrystalline silicon layer formed on the substrate has a thickness of not more than 50 microns.
Claim 5
Dependent Claim
15 words
A method according to claim 1, wherein the oxidation includes heating in an oxygen-containing atmosphere.
Claim 6
Dependent Claim
20 words
A method according to claim 4, wherein the oxidation is carried out under a higher pressure than the atmospheric pressure.
Claim 7
Dependent Claim
24 words
A method according to claim 1, wherein the monocrystalline silicon layer is formed by molecular beam epitaxy, plasma CVD, photo CVD or bias sputtering.
Claim 8
Dependent Claim
15 words
A method according to claim 1, wherein the porous silicon substrate is formed by anodization.
Claim 9
Dependent Claim
16 words
A method according to claim 7, wherein the anodization is carried out in a HF solution.
Claim 10
Dependent Claim
20 words
A method according to claim 1, wherein an antioxidant film is formed on the monocrystalline silicon layer before the oxidation.
Claim 11
Dependent Claim
15 words
A method according to claim 9, wherein the antioxidant film is a silicon nitride film.
Claim 12
Dependent Claim
24 words
A method according to claim 1, wherein the opposite side of the monocrystalline silicon to the porous silicon substrate is oxidized by the oxidation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-01 | 1997-05-03 | 1997-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-01 | 2001-05-03 | 2001-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-01 | 2005-05-03 | 2005-11-02 | $7700.00 | Window Closed / Lapsed |