Capacitor-couple electrostatic discharge protection circuit

Claim 2

A capacitor-couple electrostatic discharge (ESD) protection circuit adapted to be used in an integrated circuit (IC) and connected between an input pad and an internal circuit of said IC for protecting said internal circuit from being damaged by an ESD current, said capacitor-couple ESD protection circuit comprising: an ESD bypass device electrically connected to said internal circuit for protecting said internal circuit by bypassing said ESD current, said device comprising an NMOS transistor having a gate for bypassing said ESD current when an ESD voltage of said ESD current occurring at said input pad is in a first polarity state and a PMOS transistor having a gate for bypassing said ESD current when said ESD voltage occurring at said input pad is in a second polarity state; a capacitor-couple circuit electrically connected to said ESD bypass device and coupling a portion of said ESD voltage to said gate of said NMOS transistor when said ESD voltage occurring at said input pad is said first polarity, and to said gate of said PMOS transistor when said ESD voltage occurring at said input pad is in said second polarity state; and a potential leveling device comprising a first diode and a second diode parasitized to said ESD bypass device for keeping said ESD voltage transmitted for said internal circuit at a low potential level and bypassing said ESD voltage via said first diode when said ESD voltage occurring at said input pad is in a third polarity state and via said second diode when said ESD voltage occurring at said input pad is in a fourth polarity state.

Claim 3

A capacitor-couple ESD protection circuit according to claim 1 wherein said capacitor-couple circuit includes a capacitor.

Claim 4

A capacitor-couple ESD protection circuit according to claim 1 wherein said gate, source and drain electrodes of each of said NMOS transistor and said PMOS transistor are electrically connected to said capacitor-couple circuit, said input pad, and a power source terminal, respectively.

Claim 5

A capacitor-couple ESD protection circuit according to claim 1 wherein said NMOS transistor and said PMOS transistor are enhancement MOS transistors.

Claim 6

A capacitor-couple ESD protection circuit according to claim 1 further comprising a delay circuit electrically connected to said input pad and said ESD bypass device for delaying the conductive time of said ESD bypass device when said ESD current occurs at said input pad, and turning said ESD bypass device off when said IC is in normal operating conditions.

Claim 7

A capacitor-couple ESD protection circuit according to claim 5 wherein said delay circuit includes a resistor.

Claim 8

A capacitor-couple ESD protection circuit according to claim 1 wherein said ESD voltage in said first polarity occurs responsive to said ESD voltage being a positive polarity relative to VSS and with a floating VDD, in said second polarity occurs responsive to said ESD voltage being a negative polarity relative to VDD and with a floating VSS, in said third polarity occurs responsive to said ESD voltage being a negative polarity relative to VSS and with a floating VDD, and in said fourth polarity occurs responsive to said ESD voltage being a positive polarity relative to VDD and with a floating VSS.

Claim 9

A capacitor-couple electrostatic discharge (ESD) protection circuit adapted to be used in an integrated circuit (IC) and connected between an internal circuit and an output pad of said IC for protecting an output buffer, said capacitor-couple ESD protection circuit comprising: an ESD bypass device electrically connected to said output pad for bypassing said ESD current inputted from said output pad, said device comprising an NMOS transistor having a gate for bypassing said ESD current when said ESD voltage occurring at said input pad is in a first polarity state and a PMOS transistor or having a gate for bypassing said ESD current when said ESD voltage occurring at said input pad is in a second polarity state; an ESD bypass device electrically connected to said internal circuit for protecting said internal circuit by bypassing said ESD current; a capacitor-couple circuit electrically connected to said ESD bypass device and coupling a portion of ESD voltage to said gate of said NMOS transistor when said ESD voltage occurring at said output pad is in a first polarity state, and said gate of said PMOS transistor when said ESD voltage occurring at said input pad is in said second polarity state; and a potential leveling device comprising a first diode and a second diode parasitizing to said ESD bypass device for keeping said ESD voltage transmitted for said internal circuit at a low potential level and bypassing said ESD voltage via said first diode when said ESD voltage occurring at said output pad is in a third polarity state and via second diode when said ESD voltage occurring at said input pad is in a fourth polarity state.

Claim 10

A capacitor-couple electrostatic discharge (ESD) protection circuit adapted to be used in an integrated circuit (IC) and connected between an internal circuit and an output pad of said IC for protecting an output buffer, said capacitor-couple ESD protection circuit comprising: an ESD bypass device electrically connected to said output pad for bypassing said ESD current inputted from said output pad, said device comprising an NMOS transistor having a gate for bypassing said ESD current when said ESD voltage occurring at said input pad is in a first polarity state and a PMOS transistor or having a gate for bypassing said ESD current when said ESD voltage occurring at said input pad is in a second polarity state; an ESD bypass device electrically connected to said internal circuit for protecting said internal circuit by bypassing said ESD current; a capacitor-couple circuit electrically connected to said ESD bypass device and coupling a portion of ESD voltage to said gate of said NMOS transistor when said ESD voltage occurring at said output pad is in a first polarity state, and said gate of said PMOS transistor when said ESD voltage occurring at said input pad is in said second polarity state; and a potential leveling device comprising a first diode and a second diode parasitizing to said ESD bypass device for keeping said ESD voltage transmitted for said internal circuit at a low potential level and bypassing said ESD voltage via said first diode when said ESD voltage occurring at said output pad is in a third polarity state and via second diode when said ESD voltage occurring at said input pad is in a fourth polarity state.

Claim 11

A capacitor-couple ESD protection circuit according to claim 8 wherein said capacitor-couple circuit includes a capacitor.

Claim 12

A capacitor-couple ESD protection circuit according to claim 8 wherein the gate, source and drain electrodes of each of said NMOS transistor transistor and said PMOS transistor transistors are electrically connected to said capacitor-couple circuit, said output pad, and a power source terminal, respectively.

Claim 13

A capacitor-couple ESD protection circuit according to claim 8 wherein said ESD voltage in said first polarity occurs responsive to said ESD voltage being a positive polarity relative to VSS and with a floating VDD, in said second polarity occurs responsive to said ESD voltage being a negative polarity relative to VDD and with a floating VSS, in said third polarity occurs responsive to said ESD voltage being a negative polarity relative to VSS and with a floating VDD, and in said fourth polarity occurs responsive to said ESD voltage being a positive polarity relative to VDD and with a floating VSS.