Patent US5620931A successfully refreshed from Google Patents.
US5620931A
Expired / Lapsed
US
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Methods for fabricating monolithic device containing circuitry and suspended microstructure
Assignee: Analog Devices Inc
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Filing: 1995-06-06
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Granted: 1997-04-15
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Expires: 2015-06-06
Abstract
Abstract A monolithic capacitance-type microstructure includes a semiconductor substrate, a plurality of posts extending from the surface of the substrate, a bridge suspended from the posts, and an electrically-conductive, substantially stationary element anchored to the substrate. The bridge includes an element that is laterally movable with respect to the surface of the substrate. The substantially stationary element is positioned relative to the laterally movable element such that the laterally movable element and the substantially stationary element form a capacitor. Circuitry may be disposed on the substrate and operationally coupled to the movable element and the substantially stationary element for processing a signal based on a relative positioning of the movable element and the substantially stationary element. A method for fabricating the microstructure and the circuitry is disclosed.
Inventors
- 👤 Robert W. K. Tsang
- 👤 Theresa A. Core
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:25
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00214; B81B; B81B3/00; B81B3/0002; B81B3/001; B81C1/00222; B81C1/00246; B81C1/00912; B81C1/0092; B81C99/00; B81C99/0035; G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/0802; G01P15/125; G01P15/13; G01P15/131; B81C2201/00; B81C2201/11; B81C2201/112; B81C2203/00; B81C2203/07; B81C2203/0707; B81C2203/0735; G01P2015/0805; G01P2015/0808; G01P2015/0811; G01P2015/0814
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
122 words
A process for fabricating a monolithic device, comprising the steps of: (1) providing a substrate having a first surface region for formation of a circuit and a second surface region for formation of a suspended microstructure; (2) forming transistors in the first surface region of said substrate; (3) forming a spacer layer over the second surface region of said substrate; (4) forming at least one anchor opening in said spacer layer; (5) forming a patterned polysilicon layer over said spacer layer and said anchor opening to define said microstructure; (6) forming conductive paths for electrically interconnecting said transistors to form said circuit and for electrically interconnecting said microstructure to said circuit; and (7) removing said spacer layer to release said suspended microstructure.
Claim 2
Dependent Claim
122 words
A process for fabricating a monolithic device, comprising the steps of: (1) providing a substrate having a first surface region for formation of a circuit and a second surface region for formation of a suspended microstructure; (2) forming transistors in the first surface region of said substrate; (3) forming a spacer layer over the second surface region of said substrate; (4) forming at least one anchor opening in said spacer layer; (5) forming a patterned polysilicon layer over said spacer layer and said anchor opening to define said microstructure; (6) forming conductive paths for electrically interconnecting said transistors to form said circuit and for electrically interconnecting said microstructure to said circuit; and (7) removing said spacer layer to release said suspended microstructure.
Claim 3
Dependent Claim
91 words
A process for fabricating a monolithic device as defined in claim 1 wherein the step of forming transistors includes forming an oxide layer and other dielectric layers over the first surface region and the second surface region of said substrate and wherein the process further includes the steps of: forming an etch stop layer over the first surface region of said substrate following step (2), removing said other dielectric layers from the second surface region of said substrate, and forming a passivating layer over the second surface region of said substrate.
Claim 4
Dependent Claim
41 words
A process for fabricating a monolithic device as defined in claim 1 further including the step of forming a protective layer over said polysilicon layer in the second surface region of said substrate prior to the step of forming conductive paths.
Claim 5
Dependent Claim
19 words
A process for fabricating a monolithic device as defined in claim 3 wherein said protective layer comprises silicon oxide.
Claim 6
Dependent Claim
37 words
A process for fabricating a monolithic device as defined in claim 1 further including the step of forming a passivating layer over the first surface region of said substrate before the step of removing said spacer layer.
Claim 7
Dependent Claim
27 words
A process for fabricating a monolithic device as defined in claim 1 wherein the step of forming a spacer layer includes forming a silicon oxide spacer layer.
Claim 8
Dependent Claim
44 words
A process for fabricating a monolithic device as defined in claim 1 wherein the step of forming a patterned polysilicon layer includes the steps of depositing a polysilicon layer over said spacer layer and etching said polysilicon layer to form said patterned polysilicon layer.
Claim 9
Dependent Claim
37 words
A process for fabricating a monolithic device as defined in claim 1 wherein the step of forming a patterned polysilicon layer includes implanting ions into said polysilicon layer to establish a desired conductivity of said polysilicon layer.
Claim 10
Dependent Claim
29 words
A method for fabricating a monolithic device as defined in claim 1 further including the step of removing said spacer layer from the first surface region of said substrate.
Claim 11
Dependent Claim
216 words
A process for fabricating a monolithic device, comprising the steps of: (1) providing a substrate having a first surface region for formation of a circuit and a second surface region for formation of a suspended microstructure; (2) forming transistors in the first surface region of said substrate, the step of forming transistors including forming an oxide layer and other dielectric layers over the first surface region and the second surface region of said substrate; (3) forming an etch stop layer over the first surface region of said substrate; (4) removing said other dielectric layers from the second surface region of said substrate; (5) forming a passivating layer over the second surface region of said substrate; (6) forming a spacer layer over the second surface region of said substrate; (7) forming at least one anchor opening in said spacer layer; (8) forming a patterned polysilicon layer over said spacer layer in the second surface region of said substrate, said patterned polysilicon layer defining said microstructure; (9) forming a protective layer over said patterned polysilicon layer in the second surface region of said substrate; (10) forming final conductive paths for electrically interconnecting said transistors to form said circuit and for electrically interconnecting said microstructure to said circuit; and (11) removing said spacer layer to release said suspended microstructure.
Claim 12
Dependent Claim
216 words
A process for fabricating a monolithic device, comprising the steps of: (1) providing a substrate having a first surface region for formation of a circuit and a second surface region for formation of a suspended microstructure; (2) forming transistors in the first surface region of said substrate, the step of forming transistors including forming an oxide layer and other dielectric layers over the first surface region and the second surface region of said substrate; (3) forming an etch stop layer over the first surface region of said substrate; (4) removing said other dielectric layers from the second surface region of said substrate; (5) forming a passivating layer over the second surface region of said substrate; (6) forming a spacer layer over the second surface region of said substrate; (7) forming at least one anchor opening in said spacer layer; (8) forming a patterned polysilicon layer over said spacer layer in the second surface region of said substrate, said patterned polysilicon layer defining said microstructure; (9) forming a protective layer over said patterned polysilicon layer in the second surface region of said substrate; (10) forming final conductive paths for electrically interconnecting said transistors to form said circuit and for electrically interconnecting said microstructure to said circuit; and (11) removing said spacer layer to release said suspended microstructure.
Claim 13
Dependent Claim
27 words
A process for fabricating a monolithic device as defined in claim 10 wherein the step of forming a spacer layer includes forming a silicon oxide spacer layer.
Claim 14
Dependent Claim
41 words
A process for fabricating a monolithic device as defined in claim 10 wherein the step of forming a patterned polysilicon layer includes depositing a polysilicon layer over said spacer layer and etching said polysilicon layer to form said patterned polysilicon layer.
Claim 15
Dependent Claim
38 words
A process for fabricating a monolithic device as defined in claim 12 wherein the step of forming a patterned polysilicon layer further includes implanting ions into said polysilicon layer to established a desired conductivity of said polysilicon layer.
Claim 16
Dependent Claim
29 words
A process for fabricating a monolithic device as defined in claim 10 further including a step of removing said spacer layer from the first surface region of said substrate.
Claim 17
Dependent Claim
32 words
A process for fabricating a monolithic device as defined in claim 10 further including forming a passivating layer over the first surface region of said substrate prior to removing said spacer layer.
Claim 18
Dependent Claim
83 words
A process for fabricating a suspended microstructure on a substrate, comprising the steps of: (1) forming a spacer layer over the substrate; (2) forming at least one anchor opening in said spacer layer; (3) forming a polysilicon layer over said spacer layer and said anchor opening; (4) implanting ions into said polysilicon layer to establish a desired conductivity of said polysilicon layer; (5) patterning said polysilicon layer to define the suspended microstructure; and (6) removing said spacer layer to release said suspended microstructure.
Claim 19
Dependent Claim
83 words
A process for fabricating a suspended microstructure on a substrate, comprising the steps of: (1) forming a spacer layer over the substrate; (2) forming at least one anchor opening in said spacer layer; (3) forming a polysilicon layer over said spacer layer and said anchor opening; (4) implanting ions into said polysilicon layer to establish a desired conductivity of said polysilicon layer; (5) patterning said polysilicon layer to define the suspended microstructure; and (6) removing said spacer layer to release said suspended microstructure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-14 | 2000-10-14 | 2001-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-14 | 2004-10-14 | 2005-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-14 | 2008-10-14 | 2009-04-15 | $7700.00 | Window Closed / Lapsed |